From: hackbard Date: Tue, 28 Sep 2010 14:45:15 +0000 (+0200) Subject: deguchi X-Git-Url: https://hackdaworld.org/cgi-bin/gitweb.cgi?a=commitdiff_plain;h=25f85067d364e4b1616090994779e76e3954570b;p=lectures%2Flatex.git deguchi --- diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index dc04f46..6b39840 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -1913,7 +1913,7 @@ month = may, doi = "10.1103/PhysRevLett.72.3578", publisher = "American Physical Society", - notes = "high c concentration in si, heterostructure, starined + notes = "high c concentration in si, heterostructure, strained si, dft", } @@ -2453,6 +2453,24 @@ notes = "dislocations in diamond lattice", } +@Article{deguchi92, + title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon + Ion `Hot' Implantation", + author = "Masahiro Deguchi and Makoto Kitabatake and Takashi + Hirao and Naoki Arai and Tomio Izumi", + journal = "Japanese Journal of Applied Physics", + volume = "31", + number = "Part 1, No. 2A", + pages = "343--347", + numpages = "4", + year = "1992", + URL = "http://jjap.ipap.jp/link?JJAP/31/343/", + doi = "10.1143/JJAP.31.343", + publisher = "The Japan Society of Applied Physics", + notes = "c-c bonds in c implanted si, hot implantation + efficiency, c-c hard to break by thermal annealing", +} + @Article{eichhorn99, author = "F. Eichhorn and N. Schell and W. Matz and R. K{\"{o}}gler", @@ -2493,7 +2511,7 @@ URL = "http://link.aip.org/link/?JAP/91/1287/1", doi = "10.1063/1.1428105", notes = "3c-sic alignement to si host in ibs depending on - temperature, might explain c int to c sub trafo", + temperature, might explain c into c sub trafo", } @Article{lucas10,