From: hackbard <hackbard@sage.physik.uni-augsburg.de>
Date: Tue, 8 Feb 2011 16:40:49 +0000 (+0100)
Subject: new stuff on gsmbe
X-Git-Url: https://hackdaworld.org/cgi-bin/gitweb.cgi?a=commitdiff_plain;h=2de138197288fafcfcbe01c1deff36099f946818;p=lectures%2Flatex.git

new stuff on gsmbe
---

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 25d9dcd..a5bb8bd 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -3634,6 +3634,118 @@
   notes =        "ssmbe of sic on si, lower temperatures",
 }
 
+@Article{fuyuki89,
+  title =        "Atomic layer epitaxy of cubic Si{C} by gas source
+                 {MBE} using surface superstructure",
+  journal =      "Journal of Crystal Growth",
+  volume =       "95",
+  number =       "1-4",
+  pages =        "461--463",
+  year =         "1989",
+  note =         "",
+  ISSN =         "0022-0248",
+  doi =          "DOI: 10.1016/0022-0248(89)90442-9",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
+  author =       "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
+                 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
+  notes =        "gas source mbe of 3c-sic on 6h-sic",
+}
+
+@Article{yoshinobu92,
+  author =       "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
+                 and Takashi Fuyuki and Hiroyuki Matsunami",
+  collaboration = "",
+  title =        "Lattice-matched epitaxial growth of single crystalline
+                 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
+                 molecular beam epitaxy",
+  publisher =    "AIP",
+  year =         "1992",
+  journal =      "Applied Physics Letters",
+  volume =       "60",
+  number =       "7",
+  pages =        "824--826",
+  keywords =     "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
+                 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
+                 INTERFACE STRUCTURE",
+  URL =          "http://link.aip.org/link/?APL/60/824/1",
+  doi =          "10.1063/1.107430",
+  notes =        "gas source mbe of 3c-sic on 6h-sic",
+}
+
+@Article{yoshinobu90,
+  title =        "Atomic level control in gas source {MBE} growth of
+                 cubic Si{C}",
+  journal =      "Journal of Crystal Growth",
+  volume =       "99",
+  number =       "1-4",
+  pages =        "520--524",
+  year =         "1990",
+  note =         "",
+  ISSN =         "0022-0248",
+  doi =          "DOI: 10.1016/0022-0248(90)90575-6",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
+  author =       "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
+                 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
+  notes =        "gas source mbe of 3c-sic on 3c-sic",
+}
+
+@Article{fuyuki93,
+  title =        "Atomic layer epitaxy controlled by surface
+                 superstructures in Si{C}",
+  journal =      "Thin Solid Films",
+  volume =       "225",
+  number =       "1-2",
+  pages =        "225--229",
+  year =         "1993",
+  note =         "",
+  ISSN =         "0040-6090",
+  doi =          "DOI: 10.1016/0040-6090(93)90159-M",
+  URL =          "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
+  author =       "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
+                 Matsunami",
+  notes =        "gas source mbe of 3c-sic on 3c-sic, atomic layer
+                 epitaxy, ale",
+}
+
+@Article{hara93,
+  title =        "Microscopic mechanisms of accurate layer-by-layer
+                 growth of [beta]-Si{C}",
+  journal =      "Thin Solid Films",
+  volume =       "225",
+  number =       "1-2",
+  pages =        "240--243",
+  year =         "1993",
+  note =         "",
+  ISSN =         "0040-6090",
+  doi =          "DOI: 10.1016/0040-6090(93)90162-I",
+  URL =          "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
+  author =       "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
+                 and S. Misawa and E. Sakuma and S. Yoshida",
+  notes =        "gas source mbe of 3c-sic on 3c-sic, atomic layer
+                 epitaxy, ale",
+}
+
+@Article{tanaka94,
+  author =       "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
+  collaboration = "",
+  title =        "Effects of gas flow ratio on silicon carbide thin film
+                 growth mode and polytype formation during gas-source
+                 molecular beam epitaxy",
+  publisher =    "AIP",
+  year =         "1994",
+  journal =      "Applied Physics Letters",
+  volume =       "65",
+  number =       "22",
+  pages =        "2851--2853",
+  keywords =     "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
+                 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
+                 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
+                 FLOW; FLOW RATE",
+  URL =          "http://link.aip.org/link/?APL/65/2851/1",
+  doi =          "10.1063/1.112513",
+  notes =        "gas source mbe of 6h-sic on 6h-sic",
+}
+
 @Article{fuyuki97,
   author =       "T. Fuyuki and T. Hatayama and H. Matsunami",
   title =        "Heterointerface Control and Epitaxial Growth of
diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index fc0998a..43ce616 100644
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -153,7 +153,7 @@ Further efforts have to be expended to find relations between the growth paramet
 \subsection{SiC epitaxial thin film growth}
 
 Crystalline SiC layers have been grown by a large number of techniques on the surfaces of different substrates.
-Most of the crystal growth processes are based on chemical vapor deposition (CVD), solid-source molecular beam epitaxy (MBE) and gas-source MBE on Si as well as SiC substrates.
+Most of the crystal growth processes are based on chemical vapor deposition (CVD), solid-source molecular beam epitaxy (MBE) and gas-source MBE (GSMBE) on Si as well as SiC substrates.
 In CVD as well as gas-source MBE, C and Si atoms are supplied by C containing gases like CH$_4$, C$_3$H$_8$, C$_2$H$_2$ or C$_2$H$_4$ and Si containing gases like SiH$_4$, Si$_2$H$_6$, SiH$_2$Cl$_2$, SiHCl$_3$ or SiCl$_4$ respectively.
 In the case of solid-source MBE atoms are provided by electron beam evaporation of graphite and solid Si or thermal evaporation of fullerenes.
 The following review will exclusively focus on CVD and MBE techniques.
@@ -190,9 +190,11 @@ Thus, 3C nucleation is assumed as a result of migrating Si and C cointaining mol
 {\color{red} This can be employed to create 3C layers with reduced density of APB defects.}
 
 Lower growth temperatures, a clean growth ambient, in situ control of the growth process, layer-by-layer deposition and the possibility to achieve dopant profiles within atomic dimensions due to the reduced diffusion at low growth temperatures reveal MBE as a promising technique to produce SiC epitaxial layers.
-gas source ... 3C on 6H
-3C on 3C homoepitaxy by ALE
-6H on 6H ...
+Using alternating supply of the gas beams Si$_2$H$_6$ and C$_2$H$_2$ in GSMBE, 3C-SiC epilayers were obtained on 6H-SiC substrates \cite{yoshinobu92}.
+On \hkl(000-1) substrates ...
+gas source ... 3C homoeptiaxy \cite{yoshinobu90}
+3C on 3C homoepitaxy by ALE \cite{fuyuki89,fuyuki93,hara93}
+6H on 6H ... \cite{tanaka94}
 Problem of gas source ... strong adsorption and incorporation of atomic decomposited hydrogen of the gas phase reactants at low temperatures.
 Growth rate lower than desorption rate of hydrogen ...
 Solid source MBE may be the key to avoid such problems ...