From: hackbard Date: Sun, 16 Nov 2008 15:56:39 +0000 (+0100) Subject: security checkin X-Git-Url: https://hackdaworld.org/cgi-bin/gitweb.cgi?a=commitdiff_plain;h=3e20fd2066f92f6d0cd985111a7eb0e48d87286f;p=lectures%2Flatex.git security checkin --- diff --git a/posic/talks/seminar_2008.tex b/posic/talks/seminar_2008.tex index 600080c..d370071 100644 --- a/posic/talks/seminar_2008.tex +++ b/posic/talks/seminar_2008.tex @@ -271,27 +271,44 @@ Die Alternative: Ionenstrahlsynthese - \small + {\small - \begin{minipage}{6cm} \begin{itemize} - \item Implantation 1:\\ - 180 keV C$^+\rightarrow$ FZ-Si(100)\\ + \item Implantation 1: + 180 keV C$^+\rightarrow$ FZ-Si(100), $D=7.9 \times 10^{17}$ cm$^{-2}$, - $T_{\text{i}}=500 \, ^{\circ} \text{C}$\\ - $\rightarrow$ - \item Implantation 2:\\ - 180 keV C$^+\rightarrow$ FZ-Si(100)\\ + $T_{\text{i}}=500 \, ^{\circ} \text{C}$ + \begin{center} + $\Downarrow$\\ + epitaktisch orientierte 3C-SiC Ausscheidungen + in kastenf"ormigen Bereich, + eingeschlossen in a-Si:C + \end{center} + \item Implantation 2: + 180 keV C$^+\rightarrow$ FZ-Si(100), $D=0.6 \times 10^{17}$ cm$^{-2}$, - $T_{\text{i}}=250 \, ^{\circ} \text{C}$\\ - $\rightarrow$ - \item Tempern: + $T_{\text{i}}=250 \, ^{\circ} \text{C}$ + \begin{center} + $\Downarrow$\\ + Zerst"orung einzelner SiC Ausscheidungen + in gr"o"ser werdenden amorphen Grenzschichten + \end{center} + \item Tempen: $T=1250 \, ^{\circ} \text{C}$, $t=10\text{ h}$ + \begin{center} + $\Downarrow$\\ + Homogene, st"ochiometrische 3C-SiC Schicht mit + scharfen Grenzfl"achen + \end{center} \end{itemize} + + + \begin{minipage}{5.9cm} + \includegraphics[width=6cm]{ibs_3c-sic.eps} \end{minipage} \hspace*{0.3cm} - \begin{minipage}{6cm} - \includegraphics[width=7cm]{ibs_3c-sic.eps} + \begin{minipage}{6.5cm} + \vspace*{0.5cm} {\scriptsize Querschnitts-TEM-Aufnahme einer einkristallinen vergrabenen 3C-SiC-Schicht.\\ @@ -300,6 +317,8 @@ } \end{minipage} +} + \end{slide} \begin{slide}