From: hackbard Date: Mon, 19 Sep 2011 09:00:39 +0000 (+0200) Subject: added patent X-Git-Url: https://hackdaworld.org/cgi-bin/gitweb.cgi?a=commitdiff_plain;h=45c64a012b9adeee522d428c19bc6f263d7c47b9;p=lectures%2Flatex.git added patent --- diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index fe532d2..e575307 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -5160,3 +5160,47 @@ year = "1994", publisher = "Suhrkamp", } + +% Generated at www.see-out.com/sandramau/bibpat.html on on 19/09/11 03:57:45 CDT +@Misc{ATTENBERGER:2003:misc, + author = "Wilfried ATTENBERGER and Jörg LINDNER and Bernd + STRITZKER", + title = "A {METHOD} {FOR} {FORMING} {A} {LAYERED} + {SEMICONDUCTOR} {STRUCTURE} {AND} {CORRESPONDING} + {STRUCTURE}", + year = "2003", + month = apr, + day = "24", + note = "WO 2003/034484 A3R4", + version = "A3R4", + howpublished = "Patent Application", + nationality = "WO", + URL = "http://www.patentlens.net/patentlens/patent/WO_2003_034484_A3R4/en/", + filing_num = "EP0211423", + yearfiled = "2002", + monthfiled = "10", + dayfiled = "11", + pat_refs = "", + ipc_class = "7B 81C 1/00 B; 7H 01L 21/04 B; 7H 01L 21/265 B; 7H 01L + 21/322 B; 7H 01L 21/324 B; 7H 01L 21/74 A; 7H 01L + 21/762 B; 7H 01L 29/165 B; 7H 01L 33/00 B", + us_class = "", + abstract = "The following invention provides a method for forming + a layered semiconductor structure having a layer (5) of + a first semiconductor material on a substrate (1; 1') + of at least one second semiconductor material, + comprising the steps of: providing said substrate (1; + 1'); burying said layer (5) of said first semiconductor + material in said substrate (1; 1'), said buried layer + (5) having an upper surface (105) and a lower surface + (105) and dividing said substrate (1; 1') into an upper + part (1a) and a lower part (1b; 1b', 1c); creating a + buried damage layer (10; 10'; 10'', 100'') which at + least partly adjoins and/or at least partly includes + said upper surface (105) of said buried layer (5); and + removing said upper part (1a) of said substrate (1; 1') + and said buried damage layer (10; 10'; 10'', 100'') for + exposing said buried layer (5). The invention also + provides a corresponding layered semiconductor + structure.", +}