From: hackbard <hackbard@sage.physik.uni-augsburg.de>
Date: Mon, 19 Oct 2009 17:20:40 +0000 (+0200)
Subject: new refs (sic mbe and ibs)
X-Git-Url: https://hackdaworld.org/cgi-bin/gitweb.cgi?a=commitdiff_plain;h=505ccde9c1e1c7c3a0975862ffab3eef0645232a;p=lectures%2Flatex.git

new refs (sic mbe and ibs)
---

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 675792a..f1055a0 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -605,6 +605,40 @@
                  NETHERLANDS",
 }
 
+@Article{lindner99,
+  title =        "Controlling the density distribution of Si{C}
+                 nanocrystals for the ion beam synthesis of buried Si{C}
+                 layers in silicon",
+  journal =      "Nuclear Instruments and Methods in Physics Research
+                 Section B: Beam Interactions with Materials and Atoms",
+  volume =       "147",
+  number =       "1-4",
+  pages =        "249--255",
+  year =         "1999",
+  note =         "",
+  ISSN =         "0168-583X",
+  doi =          "DOI: 10.1016/S0168-583X(98)00598-9",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
+  author =       "J. K. N. Lindner and B. Stritzker",
+  notes =        "two-step implantation process",
+}
+
+@Article{lindner01,
+  title =        "Ion beam synthesis of buried Si{C} layers in silicon:
+                 Basic physical processes",
+  journal =      "Nuclear Instruments and Methods in Physics Research
+                 Section B: Beam Interactions with Materials and Atoms",
+  volume =       "178",
+  number =       "1-4",
+  pages =        "44--54",
+  year =         "2001",
+  note =         "",
+  ISSN =         "0168-583X",
+  doi =          "DOI: 10.1016/S0168-583X(01)00504-3",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
+  author =       "Jörg K. N. Lindner",
+}
+
 @Article{lindner02,
   title =        "High-dose carbon implantations into silicon:
                  fundamental studies for new technological tricks",
@@ -923,3 +957,70 @@
   URL =          "http://link.aip.org/link/?APL/56/1353/1",
   doi =          "10.1063/1.102512",
 }
+
+@Article{fissel95,
+  title =        "Epitaxial growth of Si{C} thin films on Si-stabilized
+                 [alpha]-Si{C}(0001) at low temperatures by solid-source
+                 molecular beam epitaxy",
+  journal =      "Journal of Crystal Growth",
+  volume =       "154",
+  number =       "1-2",
+  pages =        "72--80",
+  year =         "1995",
+  notes =        "solid source mbe",
+  ISSN =         "0022-0248",
+  doi =          "DOI: 10.1016/0022-0248(95)00170-0",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
+  author =       "A. Fissel and U. Kaiser and E. Ducke and B. Schröter
+                 and W. Richter",
+}
+
+@Article{borders71,
+  author =       "J. A. Borders and S. T. Picraux and W. Beezhold",
+  collaboration = "",
+  title =        "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
+                 {IMPLANTATION}",
+  publisher =    "AIP",
+  year =         "1971",
+  journal =      "Applied Physics Letters",
+  volume =       "18",
+  number =       "11",
+  pages =        "509--511",
+  URL =          "http://link.aip.org/link/?APL/18/509/1",
+  notes =        "first time sic by ibs",
+  doi =          "10.1063/1.1653516",
+}
+
+@Article{reeson87,
+  author =       "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
+                 J. Davis and G. E. Celler",
+  collaboration = "",
+  title =        "Formation of buried layers of beta-Si{C} using ion
+                 beam synthesis and incoherent lamp annealing",
+  publisher =    "AIP",
+  year =         "1987",
+  journal =      "Applied Physics Letters",
+  volume =       "51",
+  number =       "26",
+  pages =        "2242--2244",
+  keywords =     "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
+                 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
+  URL =          "http://link.aip.org/link/?APL/51/2242/1",
+  doi =          "10.1063/1.98953",
+  notes =        "nice tem images, sic by ibs",
+}
+
+@Article{scace59,
+  author =       "R. I. Scace and G. A. Slack",
+  collaboration = "",
+  title =        "Solubility of Carbon in Silicon and Germanium",
+  publisher =    "AIP",
+  year =         "1959",
+  journal =      "The Journal of Chemical Physics",
+  volume =       "30",
+  number =       "6",
+  pages =        "1551--1555",
+  URL =          "http://link.aip.org/link/?JCP/30/1551/1",
+  doi =          "10.1063/1.1730236",
+  notes =        "solubility of c in c-si",
+}