From: hackbard Date: Wed, 12 Nov 2008 16:46:49 +0000 (+0100) Subject: safety checkin -> attac campus, mechanismus 1 X-Git-Url: https://hackdaworld.org/cgi-bin/gitweb.cgi?a=commitdiff_plain;h=54d6d0884338af67565f9f4e4ae77c40e3aac4d1;p=lectures%2Flatex.git safety checkin -> attac campus, mechanismus 1 --- diff --git a/posic/talks/seminar_2008.tex b/posic/talks/seminar_2008.tex index 43912fb..84559f3 100644 --- a/posic/talks/seminar_2008.tex +++ b/posic/talks/seminar_2008.tex @@ -151,7 +151,7 @@ Anwendungen: \begin{itemize} - \item Hochfrequenz-, Hochtemperatur und Hochleistungsbauelemente + \item Hochfrequenz-, Hochtemperatur- und Hochleistungsbauelemente \item Optoelektronik (blaue LEDs), Sensoren \item Kandidat f"ur Tr"ager und W"ande in Fusionsreaktoren \item Luft- und Raumfahrtindustrie, Milit"ar @@ -160,11 +160,11 @@ } - \begin{picture}(0,0)(-278,-150) + \begin{picture}(0,0)(-280,-150) %\includegraphics[width=4cm]{sic_inverter_ise.eps} \end{picture} - \begin{picture}(0,0)(-278,-20) + \begin{picture}(0,0)(-280,-20) %\includegraphics[width=4cm]{cc_sic_brake_dlr.eps} \end{picture} @@ -176,6 +176,8 @@ Motivation } + \vspace{8pt} + 3C-SiC (\foreignlanguage{greek}{b}-SiC) / 6H-SiC (\foreignlanguage{greek}{a}-SiC) \begin{itemize} @@ -186,20 +188,23 @@ im Anfangsstudium \end{itemize} + \vspace{16pt} + \begin{center} {\color{red} - Einsicht in den Mechanismus des 3C-SiC-Ausscheidungsvorganges\\ + Genaues Verst"andnis des 3C-SiC-Ausscheidungsvorganges\\ } - $\Rightarrow$\\ + $\Downarrow$\\ signifikanter technologischen Fortschritt in 3C-SiC D"unnschichtherstellung \end{center} - \vspace{12pt} + \vspace{16pt} - Vermeidung von SiC-Ausscheidungen + Vermeidung von SiC-Ausscheidungen in + $\text{Si}_{\text{1-y}}\text{C}_{\text{y}}$ Legierungen \begin{itemize} - \item Ma"sschneidern der Bandl"ucke + \item Ma"sschneidern der elektronischen Eigenschaften von Si \item gestreckte Heterostrukturen \end{itemize} @@ -208,27 +213,39 @@ \begin{slide} {\large\bf - Crystalline silicon and cubic silicon carbide + Motivation bzw. SiC-Ausscheidungsvorgang + } + + \vspace{64pt} + + Noch was zur Herstellung rein ... + +\end{slide} + +\begin{slide} + + {\large\bf + SiC-Ausscheidungsvorgang } \vspace{8pt} - {\bf Lattice types and unit cells:} + {\bf Kristallstruktur und Einheitszelle:} \begin{itemize} - \item Crystalline silicon (c-Si) has diamond structure\\ - $\Rightarrow {\color{si-yellow}\bullet}$ and - ${\color{gray}\bullet}$ are Si atoms - \item Cubic silicon carbide (3C-SiC) has zincblende structure\\ - $\Rightarrow {\color{si-yellow}\bullet}$ are Si atoms, - ${\color{gray}\bullet}$ are C atoms + \item kristallines Silizium (c-Si): Diamantstruktur\\ + ${\color{si-yellow}\bullet}$, ${\color{gray}\bullet}$ + $\leftarrow$ Si-Atome + \item kubisches SiC (3C-SiC): Zinkblende-Struktur\\ + ${\color{si-yellow}\bullet} \leftarrow$ Si-Atome\\ + ${\color{gray}\bullet} \leftarrow$ C-Atome \end{itemize} \vspace{8pt} \begin{minipage}{8cm} - {\bf Lattice constants:} + {\bf Gitterkonstanten:} \[ 4a_{\text{c-Si}}\approx5a_{\text{3C-SiC}} \] - {\bf Silicon density:} + {\bf Siliziumdichten:} \[ \frac{n_{\text{3C-SiC}}}{n_{\text{c-Si}}}=97,66\,\% \] @@ -239,19 +256,17 @@ \end{slide} -\end{document} - \small \begin{slide} {\large\bf - Supposed Si to 3C-SiC conversion + SiC-Ausscheidungsvorgang } \small \vspace{6pt} - Supposed conversion mechanism of heavily carbon doped Si into SiC: + Vermuteter SiC-Ausscheidungsvorgang in Si: \vspace{8pt} @@ -270,15 +285,15 @@ \vspace{8pt} \begin{minipage}{3.8cm} - Formation of C-Si dumbbells on regular c-Si lattice sites + Bildung von C-Si Dumbbells auf regul"aren c-Si Gitterpl"atzen \end{minipage} \hspace{0.6cm} \begin{minipage}{3.8cm} - Agglomeration into large clusters (embryos)\\ + Anh"aufung hin zu gro"sen Clustern (Embryos)\\ \end{minipage} \hspace{0.6cm} \begin{minipage}{3.8cm} - Precipitation of 3C-SiC + Creation of interstitials\\ + Ausscheidung von 3C-SiC + Erzeugung von Si-Zwischengitteratomen\\ \end{minipage} \vspace{12pt} @@ -298,6 +313,8 @@ \end{slide} +\end{document} + \begin{slide} {\large\bf