From: hackbard Date: Fri, 28 Oct 2011 21:56:10 +0000 (+0200) Subject: starting IBS of SiC X-Git-Url: https://hackdaworld.org/cgi-bin/gitweb.cgi?a=commitdiff_plain;h=61442ed703dca521cdf1d4f89430d1f2cd136abe;p=lectures%2Flatex.git starting IBS of SiC --- diff --git a/posic/talks/mpi_app.tex b/posic/talks/mpi_app.tex index 1d5cf40..f3e3a12 100644 --- a/posic/talks/mpi_app.tex +++ b/posic/talks/mpi_app.tex @@ -24,7 +24,7 @@ %\usepackage{epic} %\usepackage{eepic} -%\usepackage{layout} +\usepackage{layout} \usepackage{graphicx} \graphicspath{{../img/}} @@ -57,17 +57,16 @@ \begin{document} \extraslideheight{10in} -\slideframe{none} +\slideframe{plain} \pagestyle{empty} % specify width and height -\slidewidth 27.7cm -\slideheight 19.1cm +\slidewidth 26.3cm +\slideheight 19.9cm -% shift it into visual area properly -\def\slideleftmargin{3.3cm} -\def\slidetopmargin{0.6cm} +% margin +\def\slidetopmargin{-0.15cm} \newcommand{\ham}{\mathcal{H}} \newcommand{\pot}{\mathcal{V}} @@ -99,11 +98,23 @@ \newcommand{\dista}[1]{\unit[#1]{\AA}{}} \newcommand{\perc}[1]{\unit[#1]{\%}{}} -%\layout - % no vertical centering %\centerslidesfalse +% layout check +%\layout +\begin{slide} +\center +{\Huge +E\\ +F\\ +G\\ +A B C D E F G H G F E D C B A +G\\ +F\\ +E\\ +} +\end{slide} % topic @@ -132,6 +143,8 @@ \end{center} \end{slide} +\ifnum1=0 + % intro \begin{slide} @@ -142,7 +155,7 @@ \vspace*{0.2cm} -\begin{minipage}{7cm} +\begin{minipage}{6.5cm} \includegraphics[width=6.5cm]{si-c_phase.eps} \begin{center} {\tiny @@ -173,58 +186,63 @@ R. I. Scace and G. A. Slack, J. Chem. Phys. 30, 1551 (1959) \begin{pspicture}(0,0)(13.5,5) - \psframe*[linecolor=hb](0,0)(13.5,5) + \psframe*[linecolor=hb](-0.2,0)(12.9,5) - \pspolygon[linecolor=hlbb,fillcolor=hlbb,fillstyle=solid](5.5,1)(7,1)(7,3)(5.5,3) - \pspolygon[linecolor=hlbb,fillcolor=hlbb,fillstyle=solid](6.75,0.5)(8,2)(8,2)(6.75,3.5) + \pspolygon[linecolor=hlbb,fillcolor=hlbb,fillstyle=solid](5.2,1)(6.5,1)(6.5,3)(5.2,3) + \pspolygon[linecolor=hlbb,fillcolor=hlbb,fillstyle=solid](6.4,0.5)(7.7,2)(7.7,2)(6.4,3.5) - \rput[lt](0.2,4.6){\color{gray}PROPERTIES} + \rput[lt](0,4.6){\color{gray}PROPERTIES} - \rput[lt](0.5,4){wide band gap} - \rput[lt](0.5,3.5){high electric breakdown field} - \rput[lt](0.5,3){good electron mobility} - \rput[lt](0.5,2.5){high electron saturation drift velocity} - \rput[lt](0.5,2){high thermal conductivity} + \rput[lt](0.3,4){wide band gap} + \rput[lt](0.3,3.5){high electric breakdown field} + \rput[lt](0.3,3){good electron mobility} + \rput[lt](0.3,2.5){high electron saturation drift velocity} + \rput[lt](0.3,2){high thermal conductivity} - \rput[lt](0.5,1.5){hard and mechanically stable} - \rput[lt](0.5,1){chemically inert} + \rput[lt](0.3,1.5){hard and mechanically stable} + \rput[lt](0.3,1){chemically inert} - \rput[lt](0.5,0.5){radiation hardness} + \rput[lt](0.3,0.5){radiation hardness} - \rput[rt](13.3,4.6){\color{gray}APPLICATIONS} + \rput[rt](12.7,4.6){\color{gray}APPLICATIONS} - \rput[rt](13,3.85){high-temperature, high power} - \rput[rt](13,3.5){and high-frequency} - \rput[rt](13,3.15){electronic and optoelectronic devices} + \rput[rt](12.5,3.85){high-temperature, high power} + \rput[rt](12.5,3.5){and high-frequency} + \rput[rt](12.5,3.15){electronic and optoelectronic devices} - \rput[rt](13,2.35){material suitable for extreme conditions} - \rput[rt](13,2){microelectromechanical systems} - \rput[rt](13,1.65){abrasives, cutting tools, heating elements} + \rput[rt](12.5,2.35){material suitable for extreme conditions} + \rput[rt](12.5,2){microelectromechanical systems} + \rput[rt](12.5,1.65){abrasives, cutting tools, heating elements} - \rput[rt](13,0.85){first wall reactor material, detectors} - \rput[rt](13,0.5){and electronic devices for space} + \rput[rt](12.5,0.85){first wall reactor material, detectors} + \rput[rt](12.5,0.5){and electronic devices for space} \end{pspicture} -\begin{picture}(0,0)(0,-162) -\includegraphics[height=2.0cm]{3C_SiC_bs.eps} +\begin{picture}(0,0)(5,-162) +\includegraphics[height=2.2cm]{3C_SiC_bs.eps} \end{picture} -\begin{picture}(0,0)(-130,-162) -\includegraphics[height=2.0cm]{nasa_600c_led.eps} +\begin{picture}(0,0)(-120,-162) +\includegraphics[height=2.2cm]{nasa_600c_led.eps} \end{picture} -\begin{picture}(0,0)(-295,-162) -\includegraphics[height=2.0cm]{6h-sic_3c-sic.eps} +\begin{picture}(0,0)(-270,-162) +\includegraphics[height=2.2cm]{6h-sic_3c-sic.eps} \end{picture} %%%% -\begin{picture}(0,0)(5,65) +\begin{picture}(0,0)(10,65) \includegraphics[height=2.8cm]{sic_switch.eps} \end{picture} -\begin{picture}(0,0)(-145,65) -\includegraphics[height=2.8cm]{infineon_schottky.eps} -\end{picture} -\begin{picture}(0,0)(-260,65) +%\begin{picture}(0,0)(-243,65) +\begin{picture}(0,0)(-110,65) \includegraphics[height=2.8cm]{ise_99.eps} \end{picture} +%\begin{picture}(0,0)(-135,65) +\begin{picture}(0,0)(-100,65) +\includegraphics[height=1.2cm]{infineon_schottky.eps} +\end{picture} +\begin{picture}(0,0)(-233,65) +\includegraphics[height=2.8cm]{solar_car.eps} +\end{picture} \end{slide} @@ -233,12 +251,24 @@ R. I. Scace and G. A. Slack, J. Chem. Phys. 30, 1551 (1959) \begin{slide} {\large\bf - Polytypes of SiC + Polytypes of SiC\\[0.4cm] } - \vspace{4cm} +\includegraphics[width=3.8cm]{cubic_hex.eps}\\ +\begin{minipage}{1.9cm} +{\tiny cubic (twist)} +\end{minipage} +\begin{minipage}{2.9cm} +{\tiny hexagonal (no twist)} +\end{minipage} + +\begin{picture}(0,0)(-150,0) + \includegraphics[width=7cm]{polytypes.eps} +\end{picture} - \small +\vspace{0.6cm} + +\footnotesize \begin{tabular}{l c c c c c c} \hline @@ -254,34 +284,19 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\ \hline \end{tabular} -{\tiny - Values for $T=300$ K -} - -\begin{picture}(0,0)(-160,-155) - \includegraphics[width=7cm]{polytypes.eps} -\end{picture} -\begin{picture}(0,0)(-10,-185) - \includegraphics[width=3.8cm]{cubic_hex.eps}\\ -\end{picture} -\begin{picture}(0,0)(-10,-175) - {\tiny cubic (twist)} -\end{picture} -\begin{picture}(0,0)(-60,-175) - {\tiny hexagonal (no twist)} -\end{picture} \begin{pspicture}(0,0)(0,0) -\psellipse[linecolor=green](5.7,3.03)(0.4,0.5) +\psellipse[linecolor=green](5.7,2.10)(0.4,0.5) \end{pspicture} \begin{pspicture}(0,0)(0,0) -\psellipse[linecolor=green](5.6,1.68)(0.4,0.2) +\psellipse[linecolor=green](5.6,0.92)(0.4,0.2) \end{pspicture} \begin{pspicture}(0,0)(0,0) -\psellipse[linecolor=red](10.7,1.13)(0.4,0.2) +\psellipse[linecolor=red](10.45,0.45)(0.4,0.2) \end{pspicture} \end{slide} +\fi % fabrication \begin{slide} @@ -292,15 +307,29 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\ \small - \vspace{4pt} + \vspace{2pt} - SiC - \emph{Born from the stars, perfected on earth.} + {\color{gray} + \emph{Silicon carbide --- Born from the stars, perfected on earth.} + } - IBS also here! - - \vspace{4pt} +\vspace{2pt} + +SiC thin film by MBE \& CVD +\begin{itemize} + \item Much progress achieved in homo/heteroepitaxial SiC thin film growth + \item \underline{Commercially available} semiconductor power devices based on + \underline{\foreignlanguage{greek}{a}-SiC} + \item Production of favored \underline{3C-SiC} material + \underline{less advanced} + \item Quality and size not yet sufficient +\end{itemize} +\begin{picture}(0,0)(-310,-20) + \includegraphics[width=2.0cm]{cree.eps} +\end{picture} + +Alternative method: Ion beam synthesis of SiC in Si - Conventional thin film SiC growth: \begin{itemize} \item \underline{Sublimation growth using the modified Lely method} \begin{itemize} @@ -366,6 +395,9 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\ \end{slide} +\end{document} +\ifnum1=0 + % contents \begin{slide}