From: hackbard Date: Mon, 17 Nov 2008 16:59:45 +0000 (+0100) Subject: anfang prec ergebnisse - hurry up! X-Git-Url: https://hackdaworld.org/cgi-bin/gitweb.cgi?a=commitdiff_plain;h=68163c42a1a0efaecfdabc56feecae1d2bc4b3ce;p=lectures%2Flatex.git anfang prec ergebnisse - hurry up! --- diff --git a/posic/talks/seminar_2008.tex b/posic/talks/seminar_2008.tex index d5ea0ee..226bd5a 100644 --- a/posic/talks/seminar_2008.tex +++ b/posic/talks/seminar_2008.tex @@ -289,7 +289,7 @@ in gr"o"ser werdenden amorphen Grenzschichten \item Tempern: $T=1250 \, ^{\circ} \text{C}$, $t=10\text{ h}$\\ - Homogene, st"ochiometrische 3C-SiC Schicht mit + Homogene st"ochiometrische 3C-SiC Schicht mit scharfen Grenzfl"achen \end{itemize} @@ -355,10 +355,24 @@ SiC-Ausscheidungsvorgang } - \vspace{64pt} + Hochaufl"osungs-TEM:\\[-0.5cm] - Hier die aus experimentellen Untersuchungen heraus vermuteten - Ausscheidungsvorgaenge rein. + \begin{minipage}{3.3cm} + \includegraphics[width=3.3cm]{tem_c-si-db.eps} + \end{minipage} + \begin{minipage}{9cm} + Bereich oberhalb des Implantationsmaximums\\ + Wolkenstruktur "uberlagert auf ungest"orten Si-Muster\\ + $\rightarrow$ C-Si Dumbbells + \end{minipage} + \begin{minipage}{3.3cm} + \includegraphics[width=3.3cm]{tem_3c-sic.eps} + \end{minipage} + \begin{minipage}{9cm} + Bereich ums Implantationsmaximum\\ + Moir\'e-Kontrast-Muster\\ + $\rightarrow$ inkoh"arente 3C-SiC-Ausscheidungen in c-Si-Matrix + \end{minipage} \end{slide} @@ -612,17 +626,11 @@ \begin{minipage}{4cm} \begin{itemize} \item $E_f=0.47$ eV - \item Very often observed - \item Most energetically\\ - favorable configuration - \item Experimental\\ - evidence [6] + \item sehr h"aufig beobachtet + \item energetisch g"unstigste Konfiguration + \item experimentelle und theoretische Best"atigungen + f"ur die Existenz dieser Konfiguration \end{itemize} - \vspace{24pt} - {\tiny - [6] G. D. Watkins and K. L. Brower,\\ - Phys. Rev. Lett. 36 (1976) 1329. - } \end{minipage} \begin{minipage}{8cm} \includegraphics[width=9cm]{100-c-si-db_s.eps} @@ -667,8 +675,8 @@ \end{itemize} }}}} \rput(3.5,1){\rnode{cool}{\psframebox[fillstyle=solid,fillcolor=lbb]{ - \parbox{3.5cm}{ - Abk"uhlen auf $20\, ^{\circ}\textrm{C}$ + \parbox{5.0cm}{ + Nach 100 ps abk"uhlen auf $20\, ^{\circ}\textrm{C}$ }}}} \ncline[]{->}{init}{insert} \ncline[]{->}{insert}{cool} @@ -685,8 +693,6 @@ \end{slide} -\end{document} - \begin{slide} {\large\bf @@ -697,16 +703,14 @@ \includegraphics[width=6.3cm]{pc_si-si.eps} \begin{minipage}[t]{6.3cm} - \tiny + \scriptsize \begin{itemize} - \item C-C peak at 0.15 nm similar to next neighbour distance of graphite - or diamond\\ + \item C-C, 0.15 nm: NN-Abstand in Graphit bzw. Diamant\\ $\Rightarrow$ Formation of strong C-C bonds (almost only for high C concentrations) - \item Si-C peak at 0.19 nm similar to next neighbour distance in 3C-SiC - \item C-C peak at 0.31 nm equals C-C distance in 3C-SiC\\ - (due to concatenated, differently oriented - <100> dumbbell interstitials) + \item Si-C, 0.19 nm: NN-Abstand in 3C-SiC + \item C-C, 0.31 nm: C-C Abstand in 3C-SiC\\ + (vekettetrkettete, verschieden orientierte 100 C-Si Dumbbells) \item Si-Si shows non-zero g(r) values around 0.31 nm like in 3C-SiC\\ and a decrease at regular distances\\ (no clear peak,