From: hackbard <hackbard@sage.physik.uni-augsburg.de>
Date: Wed, 24 Oct 2007 16:51:56 +0000 (+0200)
Subject: new bibitems
X-Git-Url: https://hackdaworld.org/cgi-bin/gitweb.cgi?a=commitdiff_plain;h=8253579073c7b03964255a1aaf79ca1d164c1326;p=lectures%2Flatex.git

new bibitems
---

diff --git a/bibdb/bibdb.tex b/bibdb/bibdb.tex
index f70fbfa..6447f9e 100644
--- a/bibdb/bibdb.tex
+++ b/bibdb/bibdb.tex
@@ -2,23 +2,7 @@
 % bibliography database
 %
 
-% molecular dynamics:
-
-@Article{batra87,
-  title = {Molecular-dynamics study of self-interstitials in silicon},
-  author = {Inder P. Batra, Farid F. Abraham, S. Ciraci},
-  journal = {Phys. Rev. B},
-  volume = {35},
-  number = {18},
-  pages = {9552--9558},
-  numpages = {6},
-  year = {1987},
-  month = {Jun},
-  doi = {10.1103/PhysRevB.35.9552},
-  publisher = {American Physical Society}
-  notes = {selft-interstitials in silicon, stillinger-weber,
-           calculation of defect formation energy, defect interstitial types}
-}
+% molecular dynamics: basics / potential
 
 @article{albe_sic_pot,
   author = {Paul Erhart and Karsten Albe},
@@ -56,6 +40,121 @@
   notes = {derivation of albe bond order formalism}
 }
 
+@Article{koster2002,
+  title = {Stress relaxation in $a-Si$ induced by ion bombardment},
+  author = {M. Koster, H. M. Urbassek},
+  journal = {Phys. Rev. B},
+  volume = {62},
+  number = {16},
+  pages = {11219--11224},
+  numpages = {5},
+  year = {2000},
+  month = {Oct},
+  doi = {10.1103/PhysRevB.62.11219},
+  publisher = {American Physical Society}
+  notes = {virial derivation for 3-body tersoff potential}
+}
+
+@Article{breadmore99,
+  title = {Direct simulation of ion-beam-induced stressing
+           and amorphization of silicon},
+  author = {K. M. Beardmore, N. Gr\o{}nbech-Jensen},
+  journal = {Phys. Rev. B},
+  volume = {60},
+  number = {18},
+  pages = {12610--12616},
+  numpages = {6},
+  year = {1999},
+  month = {Nov},
+  doi = {10.1103/PhysRevB.60.12610},
+  publisher = {American Physical Society}
+  notes = {virial derivation for 3-body tersoff potential}
+}
+
+% molecular dynamics: applications
+
+@Article{batra87,
+  title = {Molecular-dynamics study of self-interstitials in silicon},
+  author = {Inder P. Batra, Farid F. Abraham, S. Ciraci},
+  journal = {Phys. Rev. B},
+  volume = {35},
+  number = {18},
+  pages = {9552--9558},
+  numpages = {6},
+  year = {1987},
+  month = {Jun},
+  doi = {10.1103/PhysRevB.35.9552},
+  publisher = {American Physical Society}
+  notes = {selft-interstitials in silicon, stillinger-weber,
+           calculation of defect formation energy, defect interstitial types}
+}
+
+@Article{schober89,
+  title = {Extended interstitials in silicon and germanium},
+  author = {H. R. Schober},
+  journal = {Phys. Rev. B},
+  volume = {39},
+  number = {17},
+  pages = {13013--13015},
+  numpages = {2},
+  year = {1989},
+  month = {Jun},
+  doi = {10.1103/PhysRevB.39.13013},
+  publisher = {American Physical Society}
+  notes = {stillinger-weber silicon 110 stable and metastable dumbbell
+           configuration}
+}
+
+% tight binding
+
+@Article{tang97,
+  title = {Intrinsic point defects in crystalline silicon:
+           Tight-binding molecular dynamics studiesof self-diffusion,
+           interstitial-vacancy recombination, and formation volumes},
+  author = {M. Tang, L. Colombo, J. Zhu, T. Diaz de la Rubia},
+  journal = {Phys. Rev. B},
+  volume = {55},
+  number = {21},
+  pages = {14279--14289},
+  numpages = {10},
+  year = {1997},
+  month = {Jun},
+  doi = {10.1103/PhysRevB.55.14279},
+  publisher = {American Physical Society}
+  notes = {si self interstitial, diffusion, tbmd}
+}
+
+@Article{tang97,
+  title = {Tight-binding theory of native point defects in silicon}
+  author = {L. Colombo},
+  journal = {Annu. Rev. Mater. Res.},
+  volume = {32},
+  pages = {271--295},
+  numpages = {25},
+  year = {2002},
+  doi = {10.1146/annurev.matsci.32.111601.103036},
+  publisher = {Annual Reviews}
+  notes = {si self interstitial, tbmd, virial stress}
+}
+
+% mixed
+
+@Article{gao2001,
+  title = {Ab initio and empirical-potential studies of defect properties
+           in $3C-SiC$ },
+  author = {F. Gao, E. J. Bylaska, W. J. Weber, L. R. Corrales},
+  journal = {Phys. Rev. B},
+  volume = {64},
+  number = {24},
+  pages = {245208},
+  numpages = {7},
+  year = {2001},
+  month = {Dec},
+  doi = {10.1103/PhysRevB.64.245208},
+  publisher = {American Physical Society}
+  notes = {defects in 3c-sic}
+}
+
 % ab initio
 
 @Article{leung99,