From: hackbard Date: Sat, 12 Jun 2010 18:13:10 +0000 (+0200) Subject: finished prec model X-Git-Url: https://hackdaworld.org/cgi-bin/gitweb.cgi?a=commitdiff_plain;h=95b2d1acc7fb1969b13df81cf5c3e0eeea913dff;p=lectures%2Flatex.git finished prec model --- diff --git a/posic/talks/seminar_2010.tex b/posic/talks/seminar_2010.tex index 1224040..67de04d 100644 --- a/posic/talks/seminar_2010.tex +++ b/posic/talks/seminar_2010.tex @@ -26,6 +26,8 @@ \usepackage{graphicx} \graphicspath{{../img/}} +\usepackage{miller} + \usepackage[setpagesize=false]{hyperref} \usepackage{semcolor} @@ -172,8 +174,8 @@ } \begin{itemize} - \item Fabrication of silicon carbide and different polytypes - \item Precipitation model of 3C-SiC in Si + \item Polyteps and fabrication of silicon carbide + \item Supposed precipitation mechanism of SiC in Si \item Utilized simulation techniques \begin{itemize} \item Molecular dynamics (MD) simulations @@ -307,4 +309,131 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\ \end{slide} +\begin{slide} + + {\large\bf + Fabrication of silicon carbide + } + + \small + + Alternative approach: + Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0) + \begin{itemize} + \item \underline{Implantation step 1}\\ + 180 keV C$^+$, $D=7.9\times 10^{17}$ cm$^{-2}$, $T_{\text{i}}=500\,^{\circ}\mathrm{C}$\\ + $\Rightarrow$ box-like distribution of equally sized + and epitactically oriented SiC precipitates + + \item \underline{Implantation step 2}\\ + 180 keV C$^+$, $D=0.6\times 10^{17}$ cm$^{-2}$, $T_{\text{i}}=250\,^{\circ}\mathrm{C}$\\ + $\Rightarrow$ destruction of SiC nanocrystals + in growing amorphous interface layers + \item \underline{Annealing}\\ + $T=1250\,^{\circ}\mathrm{C}$, $t=10\,\text{h}$\\ + $\Rightarrow$ homogeneous, stoichiometric SiC layer + with sharp interfaces + \end{itemize} + + \begin{minipage}{6.3cm} + \includegraphics[width=6cm]{ibs_3c-sic.eps}\\[-0.2cm] + {\tiny + XTEM micrograph of single crystalline 3C-SiC in Si\hkl(1 0 0) + } + \end{minipage} + \begin{minipage}{6.3cm} + \begin{center} + {\color{blue}\bf\normalsize + Precipitation mechanism not yet fully understood! + } + \renewcommand\labelitemi{$\Rightarrow$} + \small + \underline{Understanding the SiC precipitation} + \begin{itemize} + \item significant technological progress in SiC thin film formation + \item perspectives for processes relying upon prevention of SiC precipitation + \end{itemize} + \end{center} + \end{minipage} + +\end{slide} + +\begin{slide} + + {\large\bf + Supposed precipitation mechanism of SiC in Si + } + + \scriptsize + + \vspace{0.1cm} + + \begin{minipage}{3.8cm} + Si \& SiC lattice structure\\[0.2cm] + \includegraphics[width=3.5cm]{sic_unit_cell.eps}\\[-0.3cm] + \hrule + \end{minipage} + \hspace{0.6cm} + \begin{minipage}{3.8cm} + \begin{center} + \includegraphics[width=3.3cm]{tem_c-si-db.eps} + \end{center} + \end{minipage} + \hspace{0.6cm} + \begin{minipage}{3.8cm} + \begin{center} + \includegraphics[width=3.3cm]{tem_3c-sic.eps} + \end{center} + \end{minipage} + + \begin{minipage}{4cm} + \begin{center} + C-Si dimers (dumbbells)\\[-0.1cm] + on Si interstitial sites + \end{center} + \end{minipage} + \hspace{0.2cm} + \begin{minipage}{4.2cm} + \begin{center} + Agglomeration of C-Si dumbbells\\[-0.1cm] + $\Rightarrow$ dark contrasts + \end{center} + \end{minipage} + \hspace{0.2cm} + \begin{minipage}{4cm} + \begin{center} + Precipitation of 3C-SiC in Si\\[-0.1cm] + $\Rightarrow$ Moir\'e fringes\\[-0.1cm] + \& release of Si self-interstitials + \end{center} + \end{minipage} + + \begin{minipage}{3.8cm} + \begin{center} + \includegraphics[width=3.3cm]{sic_prec_seq_01.eps} + \end{center} + \end{minipage} + \hspace{0.6cm} + \begin{minipage}{3.8cm} + \begin{center} + \includegraphics[width=3.3cm]{sic_prec_seq_02.eps} + \end{center} + \end{minipage} + \hspace{0.6cm} + \begin{minipage}{3.8cm} + \begin{center} + \includegraphics[width=3.3cm]{sic_prec_seq_03.eps} + \end{center} + \end{minipage} + +\begin{pspicture}(0,0)(0,0) +\psline[linewidth=4pt]{->}(8.5,2)(9.0,2) +\psellipse[linecolor=blue](11.5,5.8)(0.3,0.5) +\rput{-20}{\psellipse[linecolor=blue](3.3,8.1)(0.3,0.5)} +%\rput{-20}{\psellipse[linecolor=blue](6,6.5)(0.3,0.5)} +\psline[linewidth=4pt]{->}(4.0,2)(4.5,2) +\end{pspicture} + +\end{slide} + \end{document}