From: hackbard <hackbard@sage.physik.uni-augsburg.de>
Date: Mon, 18 Feb 2008 18:40:38 +0000 (+0100)
Subject: new foo
X-Git-Url: https://hackdaworld.org/cgi-bin/gitweb.cgi?a=commitdiff_plain;h=aa1655321ba3aed8296697c0325e4f9f3e8ba8ce;p=lectures%2Flatex.git

new foo
---

diff --git a/posic/talks/dpg_2008.tex b/posic/talks/dpg_2008.tex
index 5349eac..d156126 100644
--- a/posic/talks/dpg_2008.tex
+++ b/posic/talks/dpg_2008.tex
@@ -146,6 +146,24 @@
 
 % start of contents
 
+\begin{slide}
+
+ {\large\bf
+  Motivation / Introduction
+ }
+
+ Why C in Si?
+
+ \begin{itemize}
+  \item 3C-SiC wide band gap semiconductor formation
+  \item Strained Si
+ \end{itemize}
+
+ 
+
+\end{slide}
+
+ \small
 \begin{slide}
 
  {\large\bf
@@ -343,7 +361,7 @@
  \begin{minipage}[t]{4.0cm}
  \underline{Hexagonal}
  \begin{itemize}
-  \item $E_F^{\star}=4.48\, eV$
+  \item $E_F^{\star}\approx4.48\, eV$
   \item unstable!
  \end{itemize}
  \end{minipage}
@@ -409,7 +427,7 @@
  \begin{minipage}[t]{4.0cm}
  \underline{Hexagonal}
  \begin{itemize}
-  \item $E_F\sim5.6\, eV$
+  \item $E_F^{\star}\approx5.6\, eV$
   \item unstable!
  \end{itemize}
  \end{minipage}