From: hackbard <hackbard@sage.physik.uni-augsburg.de>
Date: Tue, 20 Oct 2009 15:40:54 +0000 (+0200)
Subject: ted
X-Git-Url: https://hackdaworld.org/cgi-bin/gitweb.cgi?a=commitdiff_plain;h=bf5f19538e8f53f5385c561ebf723eb5014e8264;p=lectures%2Flatex.git

ted
---

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index f1055a0..a17cd64 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -623,6 +623,22 @@
   notes =        "two-step implantation process",
 }
 
+@Article{lindner99_2,
+  title =        "Mechanisms in the ion beam synthesis of Si{C} layers
+                 in silicon",
+  journal =      "Nuclear Instruments and Methods in Physics Research
+                 Section B: Beam Interactions with Materials and Atoms",
+  volume =       "148",
+  number =       "1-4",
+  pages =        "528--533",
+  year =         "1999",
+  note =         "",
+  ISSN =         "0168-583X",
+  doi =          "DOI: 10.1016/S0168-583X(98)00787-3",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
+  author =       "J. K. N. Lindner and B. Stritzker",
+}
+
 @Article{lindner01,
   title =        "Ion beam synthesis of buried Si{C} layers in silicon:
                  Basic physical processes",
@@ -1024,3 +1040,41 @@
   doi =          "10.1063/1.1730236",
   notes =        "solubility of c in c-si",
 }
+
+@Article{cowern96,
+  author =       "N. E. B. Cowern and A. Cacciato and J. S. Custer and
+                 F. W. Saris and W. Vandervorst",
+  collaboration = "",
+  title =        "Role of {C} and {B} clusters in transient diffusion of
+                 {B} in silicon",
+  publisher =    "AIP",
+  year =         "1996",
+  journal =      "Applied Physics Letters",
+  volume =       "68",
+  number =       "8",
+  pages =        "1150--1152",
+  keywords =     "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
+                 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
+                 SILICON",
+  URL =          "http://link.aip.org/link/?APL/68/1150/1",
+  doi =          "10.1063/1.115706",
+  notes =        "suppression of transient enhanced diffusion (ted)",
+}
+
+@Article{stolk95,
+  title =        "Implantation and transient boron diffusion: the role
+                 of the silicon self-interstitial",
+  journal =      "Nuclear Instruments and Methods in Physics Research
+                 Section B: Beam Interactions with Materials and Atoms",
+  volume =       "96",
+  number =       "1-2",
+  pages =        "187--195",
+  year =         "1995",
+  note =         "Selected Papers of the Tenth International Conference
+                 on Ion Implantation Technology (IIT '94)",
+  ISSN =         "0168-583X",
+  doi =          "DOI: 10.1016/0168-583X(94)00481-1",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
+  author =       "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
+                 and J. M. Poate",
+}