From: hackbard <hackbard@sage.physik.uni-augsburg.de>
Date: Tue, 6 Apr 2010 16:55:43 +0000 (+0200)
Subject: more si-c
X-Git-Url: https://hackdaworld.org/cgi-bin/gitweb.cgi?a=commitdiff_plain;h=c48ffef87245811a698d3337c9e61242a4efc510;p=lectures%2Flatex.git

more si-c
---

diff --git a/posic/thesis/md.tex b/posic/thesis/md.tex
index 8f762a3..0af5010 100644
--- a/posic/thesis/md.tex
+++ b/posic/thesis/md.tex
@@ -202,9 +202,10 @@ This excellently agrees with the calculated value $r(13)$ in table \ref{tab:defe
 \label{fig:md:pc_si-c}
 \end{figure}
 Figure \ref{fig:md:pc_si-c} displays the Si-C radial distribution function for all three insertion volumes together with the Si-C bonds as observed in a C-Si \hkl<1 0 0> dumbbell configuration.
-The first peak observed for all insertion volumes is at approximately 0.185 nm.
+The first peak observed for all insertion volumes is at approximately 0.186 nm.
 This corresponds quite well to the expected next neighbour distance of 0.189 nm for Si and C atoms in 3C-SiC.
-
+By comparing the resulting Si-C bonds of a C-Si \hkl<1 0 0> dumbbell with the C-Si distances of the low concentration simulation it is evident that the resulting structure of the $V_1$ simulation is dominated by this type of defects.
+This is not surpsisingly, since the \hkl<1 0 0> dumbbell is found to be the ground-state defect of a C interstitial in c-Si and for the low concentration simulations a carbon interstitial is expected in every fifth silicon unit-cell ...
 
 \subsection{Increased temperature simulations}