From: hackbard <hackbard@hackdaworld.org>
Date: Wed, 21 Sep 2011 13:10:56 +0000 (+0200)
Subject: added up2date ref
X-Git-Url: https://hackdaworld.org/cgi-bin/gitweb.cgi?a=commitdiff_plain;h=e5a527ffd89207aace56121b94e87441c0c695a4;p=lectures%2Flatex.git

added up2date ref
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diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index 34c1256..280732e 100644
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -185,6 +185,11 @@ Next to surface morphology defects such as pits and islands, the main defects in
 APB defects, which constitute the primary residual defects in thick layers, are formed near surface terraces that differ in a single-atom-height step resulting in domains of SiC separated by a boundary, which consists of either Si-Si or C-C bonds due to missing or disturbed sublattice information~\cite{desjardins96,kitabatake97}.
 However, the number of such defects can be reduced by off-axis growth on a Si \hkl(0 0 1) substrate miscut towards \hkl[1 1 0] by \unit[2]{$^{\circ}$}-\unit[4]{$^{\circ}$}~\cite{shibahara86,powell87_2}.
 This results in the thermodynamically favored growth of a single phase due to the uni-directional contraction of Si-C-Si bond chains perpendicular to the terrace steps edges during carbonization and the fast growth parallel to the terrace edges during growth under Si rich conditions~\cite{kitabatake97}.
+% more up2date paper
+A reduction of the SF in addition to the APB defects was recently achieved growing 3C-SiC on undulant Si~\cite{nagasawa06}.
+Therefore, a Si\hkl(0 0 1) substrate is covered with continuous slopes oriented in the \hkl[1 1 0] and \hkl[-1 -1 0] directions.
+This eliminates APB defects via a mechanism similar to that in the off-axis growth process while, at the same time, SFs are aligned in the \hkl(1 1 1) or \hkl(-1 -1 1) planes, which are, thus, self-vanishing.
+%
 By MBE, lower process temperatures than these typically employed in CVD have been realized~\cite{hatayama95,henke95,fuyuki97,takaoka98}, which is essential for limiting thermal stresses and to avoid resulting substrate bending, a key issue in obtaining large area 3C-SiC surfaces.
 In summary, the almost universal use of Si has allowed significant progress in the understanding of heteroepitaxial growth of SiC on Si.
 However, mismatches in the thermal expansion coefficient and the lattice parameter cause a considerably high concentration of various defects, which is responsible for structural and electrical qualities that are not yet satisfactory.