From: hackbard Date: Fri, 16 May 2008 07:01:21 +0000 (+0200) Subject: final version -> profs now X-Git-Url: https://hackdaworld.org/cgi-bin/gitweb.cgi?a=commitdiff_plain;h=f259d0f811f53032765dc180437e943f2c30067c;p=lectures%2Flatex.git final version -> profs now --- diff --git a/posic/poster/emrs2008.tex b/posic/poster/emrs2008.tex index 4a2ad21..1226f1b 100644 --- a/posic/poster/emrs2008.tex +++ b/posic/poster/emrs2008.tex @@ -78,8 +78,8 @@ \section*{Motivation} {\bf Importance of the 3C-SiC precipitation process in silicon} \begin{itemize} - \item SiC is a promissing wide band gap material for high-temperature, - high-power. high-frequency semiconductor devices [1]. + \item SiC is a promising wide band gap material for high-temperature, + high-power, high-frequency semiconductor devices [1]. \item 3C-SiC epitaxial thin film formation on Si requires detailed knowledge of SiC nucleation. \item Fabrication of high carbon doped, strained pseudomorphic @@ -298,7 +298,7 @@ \includegraphics[width=8cm]{c_in_si_int_001db_0.eps} \end{minipage}\\[1cm] \begin{center} -\includegraphics[width=24cm]{100-c-si-db_s.eps} +\includegraphics[width=26cm]{100-c-si-db_s.eps}\\[0.35cm] \end{center} {\tiny [6] G. D. Watkins and K. L. Brower, Phys. Rev. Lett. 36 (1976) 1329.} @@ -328,7 +328,7 @@ \rput(7.5,5){\rnode{insert}{\psframebox[fillstyle=solid,fillcolor=lachs]{ \parbox{15cm}{ Insertion of 6000 carbon atoms at constant\\ - temperature into: + temperature into $V_1$ or $V_2$ or $V_3$: \begin{itemize} \item Total simulation volume $V_1$ \item Volume of minimal 3C-SiC precipitation $V_2$