From: hackbard Date: Fri, 22 Feb 2008 07:34:35 +0000 (+0100) Subject: alpha X-Git-Url: https://hackdaworld.org/cgi-bin/gitweb.cgi?a=commitdiff_plain;h=f3e0ee573f573fd0d441f4030886978057baa360;p=lectures%2Flatex.git alpha --- diff --git a/posic/talks/dpg_2008.tex b/posic/talks/dpg_2008.tex index 0a481f5..8214507 100644 --- a/posic/talks/dpg_2008.tex +++ b/posic/talks/dpg_2008.tex @@ -464,7 +464,7 @@ \end{minipage} \begin{minipage}[t]{6.3cm} \includegraphics[width=6.0cm]{../plot/sic_prec_energy_zoom.ps} - %\includegraphics[width=6.0cm]{../plot/sic_prec_temp.ps} + \includegraphics[width=6.0cm]{../plot/foo150.ps} \end{minipage} \end{slide} @@ -480,6 +480,11 @@ \hspace{4pt} \includegraphics[width=5.0cm]{sic_si-c-n.eps} \end{minipage} + \begin{minipage}[c]{12cm} + \includegraphics[width=6.0cm]{../plot/foo_end.ps} + \hspace{4pt} + \includegraphics[width=5.0cm]{foo_end.eps} + \end{minipage} \end{slide} @@ -492,7 +497,7 @@ \vspace{24pt} \begin{itemize} - \item Importance of understanding C in Si + \item Importance of understanding the SiC precipitation mechanism \item Interstitial configurations in silicon using the Albe potential \item Indication of SiC precipitation \end{itemize} @@ -503,6 +508,7 @@ \item Displacement and stress calculations \item Diffusion dependence of temperature and carbon concentration \item Analyzing results of the precipitation simulation runs + \item Refinement of simulation sequence to create 3C-SiC \item Analyzing self-designed Si/SiC interface \end{itemize}