From 47c8da1a6fab469ea1fcd20ad717a844cf639ca0 Mon Sep 17 00:00:00 2001 From: hackbard Date: Mon, 11 Feb 2008 14:06:43 +0100 Subject: [PATCH] removed posic_seminar file --- posic/talks/posic_seminar.tex | 134 ---------------------------------- 1 file changed, 134 deletions(-) delete mode 100644 posic/talks/posic_seminar.tex diff --git a/posic/talks/posic_seminar.tex b/posic/talks/posic_seminar.tex deleted file mode 100644 index dab7c93..0000000 --- a/posic/talks/posic_seminar.tex +++ /dev/null @@ -1,134 +0,0 @@ -\documentclass{beamer} - -\mode -{ -%\usetheme{Berkeley} -\usetheme{Warsaw} -%\usetheme{Singapore} -\setbeamercovered{transparent} -} -\usepackage{verbatim} -\usepackage[german]{babel} -\usepackage[latin1]{inputenc} -\usepackage[T1]{fontenc} -\usepackage{amsmath} -\usepackage{ae} -\usepackage{aecompl} -\usepackage{colortbl} -\usepackage{pgf,pgfarrows,pgfnodes,pgfautomata,pgfheaps,pgfshade} -%\usepackage{pstricks} -\usepackage{graphicx} -\graphicspath{{../img}} -\usepackage{hyperref} - -\begin{document} - -\title{the molecular dynamic simulation {\em posic}} -\subtitle{atomistic simulation of the precipitation process of silicon carbide in carbon doped silicon} -\author[F. Zirkelbach]{Frank Zirkelbach \\ \texttt{frank.zirkelbach@physik.uni-augsburg.de}} -\institute{ -experimental physics IV\\ -university of augsburg -} -\date{june 2006} - -\AtBeginSection[] -{ - \begin{frame} - \frametitle{agenda} - \tableofcontents[currentsection] - \end{frame} -} - -\begin{frame} - \titlepage -\end{frame} - -\begin{frame} - \frametitle{agenda} - \tableofcontents%[pausesections] -\end{frame} - -\section{introduction} - - \subsection{as things are now} - -\begin{frame} - \frametitle{introduction} - \framesubtitle{as things are now} - \begin{block}{precipitation process of $SiC$ in silicon} - \begin{itemize} - \item first steps:\\ - (investigated by high resolution electron microscopy) - \begin{itemize} - \item formation of $C-Si$-dumbbells on regular $c-Si$ lattice - sites - \item agglomeration into large clusters (embryos) - \end{itemize} - \item second step:\\ - (not accessible by experiment) - \begin{itemize} - \item cluster size reaches a radius of $2-4 \, nm$ - \item high interfacial energy due to the $SiC/Si$ lattice - mismatch (~$20 \, \%$) is overcome - \item precipitation process of $SiC$ - \end{itemize} - \end{itemize} - \end{block} -\end{frame} - - \subsection{motivation} - -\begin{frame} - \frametitle{introduction} - \framesubtitle{motivation} - \begin{block}{why studying the $SiC$ nucleation process} - \begin{itemize} - \item basic research - \item understanding the 2 steps of the precipitation process\\ - $\Rightarrow$ facilitation of the $SiC$ heteroepitaxy on $c-Si$\\ - $\Rightarrow$ suppress nucleation of $SiC$ in certain applications - \item $SiC$: most rapidly developed wide band gap semiconductor suitable - in high temperature, high frequency and high power applications - \end{itemize} - \end{block} -\end{frame} - -\begin{frame} - \frametitle{introduction} - \framesubtitle{motivation} - \begin{block}{why doing an atomistic simulation} - \begin{itemize} - \item precipitation process is not understood for the most part - \item monitor the atomic structures in early stages of the embryo formation - \item atomic rearrangement in the most critical second step\\ - (which is experimentally not accessible) - \item information about the atomic structure and interface of the - $SiC$ precipitates and the crystalline silicon\\ - (including stress fields) - \end{itemize} - \end{block} -\end{frame} - -\section{experimental observations} - -\section{simulation} - - \subsection{introduction to atomistic simulations} - -\begin{frame} - \frametitle{simulation} - \framesubtitle{introduction to atomistic simulations} - -\end{frame} - - \subsection{computational methods} - - \subsection{the {\em posic} simulation} - -\section{results} - -\section{summary \& outlook} - -\end{document} - -- 2.39.2