From 62931e25b418b7223cc79d6f919c24d90c7d2573 Mon Sep 17 00:00:00 2001 From: hackbard Date: Tue, 18 Nov 2008 17:52:51 +0100 Subject: [PATCH] nearly finished first pec results --- posic/talks/seminar_2008.tex | 101 ++++++++++++++++++++--------------- 1 file changed, 57 insertions(+), 44 deletions(-) diff --git a/posic/talks/seminar_2008.tex b/posic/talks/seminar_2008.tex index 226bd5a..6956030 100644 --- a/posic/talks/seminar_2008.tex +++ b/posic/talks/seminar_2008.tex @@ -623,17 +623,18 @@ \small - \begin{minipage}{4cm} + \begin{minipage}{5.5cm} \begin{itemize} \item $E_f=0.47$ eV \item sehr h"aufig beobachtet - \item energetisch g"unstigste Konfiguration - \item experimentelle und theoretische Best"atigungen + \item energetisch g"unstigste\\ Konfiguration + \item experimentelle und theoretische Hinweise f"ur die Existenz dieser Konfiguration \end{itemize} + \includegraphics[width=5.6cm]{c_in_si_100.ps} \end{minipage} - \begin{minipage}{8cm} - \includegraphics[width=9cm]{100-c-si-db_s.eps} + \begin{minipage}{7cm} + \includegraphics[width=8cm]{100-c-si-db_s.eps} \end{minipage} \end{slide} @@ -702,45 +703,57 @@ \includegraphics[width=6.3cm]{pc_si-c_c-c.eps} \includegraphics[width=6.3cm]{pc_si-si.eps} - \begin{minipage}[t]{6.3cm} - \scriptsize - \begin{itemize} - \item C-C, 0.15 nm: NN-Abstand in Graphit bzw. Diamant\\ - $\Rightarrow$ Formation of strong C-C bonds - (almost only for high C concentrations) - \item Si-C, 0.19 nm: NN-Abstand in 3C-SiC - \item C-C, 0.31 nm: C-C Abstand in 3C-SiC\\ - (vekettetrkettete, verschieden orientierte 100 C-Si Dumbbells) - \item Si-Si shows non-zero g(r) values around 0.31 nm like in 3C-SiC\\ - and a decrease at regular distances\\ - (no clear peak, - interval of enhanced g(r) corresponds to C-C peak width) - \end{itemize} - \end{minipage} - \begin{minipage}[t]{6.3cm} - \tiny - \begin{itemize} - \item Low C concentration (i.e. $V_1$): - The <100> dumbbell configuration - \begin{itemize} - \item is identified to stretch the Si-Si next neighbour distance - to 0.3 nm - \item is identified to contribute to the Si-C peak at 0.19 nm - \item explains further C-Si peaks (dashed vertical lines) - \end{itemize} - $\Rightarrow$ C atoms are first elements arranged at distances - expected for 3C-SiC\\ - $\Rightarrow$ C atoms pull the Si atoms into the right - configuration at a later stage - \item High C concentration (i.e. $V_2$ and $V_3$): - \begin{itemize} - \item High amount of damage introduced into the system - \item Short range order observed but almost no long range order - \end{itemize} - $\Rightarrow$ Start of amorphous SiC-like phase formation\\ - $\Rightarrow$ Higher temperatures required for proper SiC formation - \end{itemize} - \end{minipage} + \vspace{-0.1cm} + + \footnotesize + \underline{C-C, 0.15 nm}:\\ + NN-Abstand in Graphit/Diamant\\ + $\Rightarrow$ starke C-C Bindungen bei hohen Konz.\\ + \underline{Si-C, 0.19 nm}:\\ + NN-Abstand in 3C-SiC\\ + \underline{C-C, 0.31 nm}:\\ + C-C Abstand in 3C-SiC\\ + vekettete, verschieden orientierte 100 C-Si DBs\\ + \underline{Si-Si, $\sim$ 0.31 nm}:\\ + g(r) erh"oht, Si-Si in 3C-SiC\\ + Intervall entspricht C-C Peakbreite\\ + Abfall bei regul"aren Abst"anden + + \begin{picture}(0,0)(-175,-40) + \includegraphics[width=4.0cm]{conc_100_c-si-db_02.eps} + \end{picture} + \begin{picture}(0,0)(-278,-10) + \includegraphics[width=4.0cm]{conc_100_c-si-db_01.eps} + \end{picture} + + \end{slide} + + \begin{slide} + + {\large\bf + Simulationen zum Ausscheidungsvorgang + } + + \includegraphics[width=6.3cm]{pc_si-c_c-c.eps} + \includegraphics[width=6.3cm]{c_in_si_100.ps} + + \footnotesize + + \underline{Niedrige C-Konzentration ($V_1$)}: + 100 Dumbbell-Konfiguration + \begin{itemize} + \item dehnt Si-Si NN-Abstand auf 0.3 nm + \item Beitrag zum Si-C Peak bei 0.19 nm + \item erkl"art weitere Si-C Peaks (gestrichelte Linien) + \end{itemize} + $\Rightarrow$ C-Atome als erstes im erwarteten 3C-SiC-Abstand + \underline{Hohe C-Konzentration ($V_2$ und $V_3$)}: + \begin{itemize} + \item High amount of damage introduced into the system + \item Short range order observed but almost no long range order + \end{itemize} + $\Rightarrow$ Start of amorphous SiC-like phase formation\\ + $\Rightarrow$ Higher temperatures required for proper SiC formation \end{slide} -- 2.39.2