From 5aca50e47a686f19f92f88aa7dfff05ab34175b1 Mon Sep 17 00:00:00 2001 From: hackbard Date: Wed, 21 Oct 2009 14:59:34 +0200 Subject: [PATCH] c in si, strained si --- bibdb/bibdb.bib | 157 ++++++++++++++++++++++++++++++++++++++++++++++++ 1 file changed, 157 insertions(+) diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index a17cd64..bd00b0f 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -1078,3 +1078,160 @@ author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham and J. M. Poate", } + +@Article{powell94, + author = "A. R. Powell and F. K. LeGoues and S. S. Iyer", + collaboration = "", + title = "Formation of beta-Si{C} nanocrystals by the relaxation + of Si[sub 1 - y]{C}[sub y] random alloy layers", + publisher = "AIP", + year = "1994", + journal = "Applied Physics Letters", + volume = "64", + number = "3", + pages = "324--326", + keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS; + EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING; + TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS; + SYNTHESIS", + URL = "http://link.aip.org/link/?APL/64/324/1", + doi = "10.1063/1.111195", + notes = "beta sic nano crystals in si, mbe, annealing", +} + +@Article{soref91, + author = "Richard A. Soref", + collaboration = "", + title = "Optical band gap of the ternary semiconductor Si[sub 1 + - x - y]Ge[sub x]{C}[sub y]", + publisher = "AIP", + year = "1991", + journal = "Journal of Applied Physics", + volume = "70", + number = "4", + pages = "2470--2472", + keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP; + OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS; + TERNARY ALLOYS", + URL = "http://link.aip.org/link/?JAP/70/2470/1", + doi = "10.1063/1.349403", + notes = "band gap of strained si by c", +} + +@Article{kasper91, + author = "E Kasper", + title = "Superlattices of group {IV} elements, a new + possibility to produce direct band gap material", + journal = "Physica Scripta", + volume = "T35", + pages = "232--236", + URL = "http://stacks.iop.org/1402-4896/T35/232", + year = "1991", + notes = "superlattices, convert indirect band gap into a + quasi-direct one", +} + +@Article{osten99, + author = "H. J. Osten and J. Griesche and S. Scalese", + collaboration = "", + title = "Substitutional carbon incorporation in epitaxial + Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by + molecular beam epitaxy", + publisher = "AIP", + year = "1999", + journal = "Applied Physics Letters", + volume = "74", + number = "6", + pages = "836--838", + keywords = "molecular beam epitaxial growth; semiconductor growth; + wide band gap semiconductors; interstitials; silicon + compounds", + URL = "http://link.aip.org/link/?APL/74/836/1", + doi = "10.1063/1.123384", + notes = "substitutional c in si", +} + +@Article{hohenberg64, + title = "Inhomogeneous Electron Gas", + author = "P. Hohenberg and W. Kohn", + journal = "Phys. Rev.", + volume = "136", + number = "3B", + pages = "B864--B871", + numpages = "7", + year = "1964", + month = nov, + doi = "10.1103/PhysRev.136.B864", + publisher = "American Physical Society", + notes = "density functional theory, dft", +} + +@Article{kohn65, + title = "Self-Consistent Equations Including Exchange and + Correlation Effects", + author = "W. Kohn and L. J. Sham", + journal = "Phys. Rev.", + volume = "140", + number = "4A", + pages = "A1133--A1138", + numpages = "5", + year = "1965", + month = nov, + doi = "10.1103/PhysRev.140.A1133", + publisher = "American Physical Society", + notes = "dft, exchange and correlation", +} + +@Article{ruecker94, + title = "Strain-stabilized highly concentrated pseudomorphic + $Si1-x$$Cx$ layers in Si", + author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H. + J. Osten", + journal = "Phys. Rev. Lett.", + volume = "72", + number = "22", + pages = "3578--3581", + numpages = "3", + year = "1994", + month = may, + doi = "10.1103/PhysRevLett.72.3578", + publisher = "American Physical Society", + notes = "high c concentration in si, heterostructure, starined + si, dft", +} + +@Article{chang05, + title = "Electron Transport Model for Strained Silicon-Carbon + Alloy", + author = "Shu-Tong Chang and Chung-Yi Lin", + journal = "Japanese Journal of Applied Physics", + volume = "44", + number = "4B", + pages = "2257--2262", + numpages = "5", + year = "2005", + URL = "http://jjap.ipap.jp/link?JJAP/44/2257/", + doi = "10.1143/JJAP.44.2257", + publisher = "The Japan Society of Applied Physics", + notes = "enhance of electron mobility in starined si", +} + +@Article{osten97, + author = "H. J. Osten and P. Gaworzewski", + collaboration = "", + title = "Charge transport in strained Si[sub 1 - y]{C}[sub y] + and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on + Si(001)", + publisher = "AIP", + year = "1997", + journal = "Journal of Applied Physics", + volume = "82", + number = "10", + pages = "4977--4981", + keywords = "silicon compounds; Ge-Si alloys; wide band gap + semiconductors; semiconductor epitaxial layers; carrier + density; Hall mobility; interstitials; defect states", + URL = "http://link.aip.org/link/?JAP/82/4977/1", + doi = "10.1063/1.366364", + notes = "charge transport in strained si", +} -- 2.39.2