From b72d5fabe9b016843d069c4478310ea67e76fc47 Mon Sep 17 00:00:00 2001 From: hackbard Date: Wed, 4 Jan 2012 23:06:33 +0100 Subject: [PATCH] only summary and outlook missing --- posic/talks/defense.tex | 111 +++++++++++++++++++-------------- posic/talks/defense.txt | 134 +++++++++++++++++++++++++++++++++++++++- 2 files changed, 197 insertions(+), 48 deletions(-) diff --git a/posic/talks/defense.tex b/posic/talks/defense.tex index b7150bd..bfd92d0 100644 --- a/posic/talks/defense.tex +++ b/posic/talks/defense.tex @@ -122,6 +122,7 @@ % layout check %\layout +\ifnum1=0 \begin{slide} \center {\Huge @@ -134,6 +135,7 @@ F\\ E\\ } \end{slide} +\fi % topic @@ -170,7 +172,7 @@ E\\ \centerslidesfalse % skip for preparation -\ifnum1=0 +%\ifnum1=0 % intro @@ -1704,9 +1706,6 @@ Contribution of entropy to structural formation\\[0.1cm] \end{slide} -% temp -\fi - \begin{slide} \headphd @@ -2116,11 +2115,6 @@ equilibrium properties \begin{itemize} \item Stretched coherent SiC structures\\ $\Rightarrow$ Precipitation process involves {\color{blue}\cs} -\item Explains annealing behavior of high/low T C implantations - \begin{itemize} - \item Low T: highly mobile {\color{red}\ci} - \item High T: stable configurations of {\color{blue}\cs} - \end{itemize} \item Role of \si{} \begin{itemize} \item Vehicle to rearrange \cs --- [\cs{} \& \si{} $\leftrightarrow$ \ci] @@ -2129,6 +2123,11 @@ $\Rightarrow$ Precipitation process involves {\color{blue}\cs} \ldots Si/SiC interface\\ \ldots within stretched coherent SiC structure \end{itemize} +\item Explains annealing behavior of high/low T C implantations + \begin{itemize} + \item Low T: highly mobile {\color{red}\ci} + \item High T: stable configurations of {\color{blue}\cs} + \end{itemize} \end{itemize} \vspace{0.2cm} \centering @@ -2146,6 +2145,9 @@ High T $\leftrightarrow$ IBS conditions far from equilibrium\\ \end{slide} +% skip high c conc results +\ifnum1=0 + \begin{slide} {\large\bf @@ -2154,10 +2156,10 @@ High T $\leftrightarrow$ IBS conditions far from equilibrium\\ \footnotesize -\begin{minipage}{6.5cm} +\begin{minipage}{6.0cm} \includegraphics[width=6.4cm]{12_pc_thesis.ps} \end{minipage} -\begin{minipage}{6.5cm} +\begin{minipage}{6.0cm} \includegraphics[width=6.4cm]{12_pc_c_thesis.ps} \end{minipage} @@ -2212,6 +2214,12 @@ High C \& low T implants \end{slide} +% skip high c conc +\fi + +% for preparation +%\fi + \begin{slide} \headphd @@ -2219,47 +2227,58 @@ High C \& low T implants Summary / Conclusions } -\small +\scriptsize -\begin{pspicture}(0,0)(12,1.0) -\psframebox[fillstyle=gradient,gradbegin=hred,gradend=white,gradlines=1000,gradmidpoint=1.0,linestyle=none]{ -\begin{minipage}{11cm} -{\color{black}Diploma thesis}\\ - \underline{Monte Carlo} simulation modeling the selforganization process\\ - leading to periodic arrays of nanometric amorphous SiC precipitates +\framebox{ +\begin{minipage}{12.3cm} + \underline{Defects} + \begin{itemize} + \item DFT / EA + \begin{itemize} + \item Point defects excellently / fairly well described + by DFT / EA + \item C$_{\text{sub}}$ drastically underestimated by EA + \item EA predicts correct ground state: + C$_{\text{sub}}$ \& \si{} $>$ \ci{} + \item Identified migration path explaining + diffusion and reorientation experiments by DFT + \item EA fails to describe \ci{} migration: + Wrong path \& overestimated barrier + \end{itemize} + \item Combinations of defects + \begin{itemize} + \item Agglomeration of point defects energetically favorable + by compensation of stress + \item Formation of C-C unlikely + \item C$_{\text{sub}}$ favored conditions (conceivable in IBS) + \item \ci{} \hkl<1 0 0> $\leftrightarrow$ \cs{} \& \si{} \hkl<1 1 0>\\ + Low barrier (\unit[0.77]{eV}) \& low capture radius + \end{itemize} + \end{itemize} \end{minipage} } -\end{pspicture}\\[0.4cm] -\begin{pspicture}(0,0)(12,2) -\psframebox[fillstyle=gradient,gradbegin=hblue,gradend=white,gradmidpoint=1.0,gradlines=1000,linestyle=none]{ -\begin{minipage}{11cm} -{\color{black}Doctoral studies}\\ - Classical potential \underline{molecular dynamics} simulations \ldots\\ - \underline{Density functional theory} calculations \ldots\\[0.2cm] - \ldots on defect formation and SiC precipitation in Si + +\framebox{ +\begin{minipage}[t]{12.3cm} + \underline{Pecipitation simulations} + \begin{itemize} + \item High C concentration $\rightarrow$ amorphous SiC like phase + \item Problem of potential enhanced slow phase space propagation + \item Low T $\rightarrow$ C-Si \hkl<1 0 0> dumbbell dominated structure + \item High T $\rightarrow$ C$_{\text{sub}}$ dominated structure + \item High T necessary to simulate IBS conditions (far from equilibrium) + \item Precipitation by successive agglomeration of \cs (epitaxy) + \item \si{}: vehicle to form \cs{} \& supply of Si \& stress compensation + (stretched SiC, interface) + \end{itemize} \end{minipage} } -\end{pspicture}\\[0.5cm] -\begin{pspicture}(0,0)(12,3) -\psframebox[fillstyle=solid,fillcolor=white,linestyle=solid]{ -\begin{minipage}{11cm} -\vspace{0.2cm} -{\color{black}\bf How to proceed \ldots}\\[0.1cm] -MC $\rightarrow$ empirical potential MD $\rightarrow$ Ground-state DFT \ldots -\begin{itemize} - \renewcommand\labelitemi{$\ldots$} - \item beyond LDA/GGA methods \& ground-state DFT -\end{itemize} -Investigation of structure \& structural evolution \ldots -\begin{itemize} - \renewcommand\labelitemi{$\ldots$} - \item electronic/optical properties - \item electronic correlations - \item non-equilibrium systems -\end{itemize} -\end{minipage} + +\begin{center} +{\color{blue} +\framebox{Precipitation by successive agglomeration of \cs{}} } -\end{pspicture}\\[0.5cm] +\end{center} \end{slide} diff --git a/posic/talks/defense.txt b/posic/talks/defense.txt index 2df4812..325510d 100644 --- a/posic/talks/defense.txt +++ b/posic/talks/defense.txt @@ -186,7 +186,7 @@ with a time step of 1 fs. the interaction is decribed by a Tersoff-like short-range bond order potential, developed by erhart and albe. the short range character is achieved by a cutoff function, -which drops the interaction inbetween the first and second next neighbor atom. +which drops the interaction inbetween the first and next neighbor atom. the potential consists of a repulsive and an attractive part associated with the bonding, which is limited by the bond order term, which takes into consideration all atoms k influencing the bond of atoms i and j. @@ -451,12 +451,142 @@ suggest an increased participation of Cs in the precipitation process. slide 21 -now ... +as a last task, reproducing the SiC precipitation is attempted +by successive insertion of 6000 C atoms, +the number necessary to form a precipitate with a radius of approximately 3 nm, +into a supercell consisting of 31 Si unit cells in each direction. +insertion is realized at constant temperature. +after insertion, the simulation is continued for 100 ps +follwed by a cooling sequence downto 20 degrees celsius. +due to the high amount of particles, +the classical potential is exclusively used. +since low carbon diffusion due to the overestimated barriers is expected, +insertion volumes v2 and v3 next to the total volume v1 are considered. +v2 corresponds to the minimal precipiatte size. +v3 contains the amount of silicon atoms to form such a minimal precipitate. slide 22 + +the radial distribution Si-C, C-C and Si-Si bonds of simulations, +in which C was inserted at 450 dc, +an operative and efficient temperature in ibs, are shown. + +for the low C concentration simulation, i.e. the v1 simulation, +a clearly 100 C-Si db dominated structure is obtained, +which is obvious by comparing it to the +reference distribution generated by a single Ci defect. +the second peak is a cut-off artifact, +correpsonding to the Si-C cut-off distance of 0.26 nm. +the C-C peak at 0.31 nm, as expected in cubic SiC, +is generated by concatenated, differently oriented Ci dbs. +the same distance is also expected for the Si atoms, and, indeed, +the db structure stretches the Si-Si next neighbor distance, +which is represented by nonzero values in the correlation function. + +so, the formation of Ci dumbbells indeed occurs. +even the C atoms are already found in a separation as expected in cubic SiC. + +turning to the high C concentration simulations, i.e. the v1 and v2 simulation, +a high amount of strongly bound C-C bonds +as in graphite or diamond are observed. +an increased defect and damage density is obtained, +which makes it hard to categorize and trace defect arrangements. +only short range orde is observed. +and, indeed, comparing to other distribution data, an amorphous SiC-like +phase is obtained. + slide 23 + +to summarize, the formation of cubic SiC fails to appear. +in the v1 simulation, formation of Ci indeed occurs, however, +agglomeration is missing. +in the high concentration simulation, an amorphous SiC-like structure, +which is not expected at 450 dc, is obtained. +no rearrangemnt into crystalline cubic SiC is indicated. + slide 24 + +having a closer look, there are two obvious reasons for this obstacle. + +first of all, there is the time scale problem inherent to md in general. +to minimize the integration error, the time step must be chosen smaller +than the reciprocal of the fastes vibrational mode. +several local minima exist, which are separated by large energy barriers. +due to the low probability for escaping such a local minimum, +a transition event correpsonds to a multiple of vibrational periods. +a phase transition, in turn, consists of many such infrequent transition events. +new accelerated methods, like temperature accelerated MD and so on, +have been developed to bypass the time scale problem while retaining proper +thermodynamic sampling. + +in addition, the overestimated diffusion barriers, +due to the short range character of the potential, +intensify this problem, which I called: +potential enhanced slow phase space propagation. + +the approach used in this study is to simply increase the temperature, however, +without possible corrections. +accelerated methods or higher time scales applied exclusively +are assumed oto be not sufficient. +moreover, to legitimate the usage of increased temperatures: +cubic SiC is also observed for higher temperatures, +there is definitely a higher temperature inside the sample, and, anyways, +structural evolution instead of equilibrium properties are matter of interest. + slide 25 + +and indeed, promising changes are observed by comparing, +again the radial distribution data of Si-C, Si-Si and C-C bonds +for temperatures up to 2050 dc. +first of all, the cut-off artifact disappears. +more important, a transition a 100 db into a Cs dominated structure takes place, +as can be seen by direct comparison with the respective reference peaks. + +the Si-Si rising peak at 0.325 nm is due to two Si atoms next to a Cs atom. + +the C-C next neighbor pairs are reduced, +which is mandatory for cubic SiC formation. +the peak at roughly 0.3 nm gets slightly shifter to higher distances. +the amount of bonds due to Ci 100 combinations, represented by dashed arrows, +decreases accompanied by an increase of bonds due to combinations of +Ci 100 and Cs and pure Cs combinations, represented by the dashed line and +solid arrows respectively. +increasing values in the range between the dashed line and first solid arrow +correpsond to bonds of a Cs and another Cs with a nearby Si_i atom. + slide 26 + +to conclude, stretched coherent structures of SiC embedded in the Si host +are directly observed. +therefore, an increased participation of Cs is suggested +for implantations at elevated temperatures, +which simulate the conditions prevalent in ibs that deviate the system +from thermodynamic equilibrium enabling Ci to turn into Cs. + +the emission of Si_i serves several needs: +as a vehicle to rearrange the Cs, +realized by recombination into the highly mobile Ci configuration. +furthermore, it serves as a building block for the surrounding Si host +or further SiC formation. +finally, it may compensate stress at the Si/SiC interface +or in the stretched SiC structure, which, again, +was diretly observed in simulation. + +this perfectly explains the results of the annealing experiments +stated in the beginning of this talk. +at low temperatures highly mobile Ci whereas at high temperatures stable Cs +configurations are formed. + +to summarize, the results suggest that Cs plays an important role +in the precipitation process. +moreover, high temperatures are necessary to model ibs conditions, +which are far from equilibrium. + slide 27 +to summarize and conclude + +slide 28 + +in the end, I would like to say thank you. + -- 2.39.2