From deb1c40d072e9bbb20e69d6365233dceeb9f2bb9 Mon Sep 17 00:00:00 2001 From: hackbard Date: Wed, 27 Apr 2011 18:01:41 +0200 Subject: [PATCH] finished spe of strained si, only osten remaining --- bibdb/bibdb.bib | 87 ++++++++++++++++++++++++++++++++++++++++++-- posic/thesis/sic.tex | 27 ++++++++------ 2 files changed, 99 insertions(+), 15 deletions(-) diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index a4eb408..ebcc267 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -982,6 +982,26 @@ silicon", } +@Article{isomae93, + author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and + Masao Tamura", + collaboration = "", + title = "Annealing behavior of Me{V} implanted carbon in + silicon", + publisher = "AIP", + year = "1993", + journal = "Journal of Applied Physics", + volume = "74", + number = "6", + pages = "3815--3820", + keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV + RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH + PROFILES", + URL = "http://link.aip.org/link/?JAP/74/3815/1", + doi = "10.1063/1.354474", + notes = "c at interstitial location for rt implantation in si", +} + @Article{strane96, title = "Carbon incorporation into Si at high concentrations by ion implantation and solid phase epitaxy", @@ -1122,6 +1142,26 @@ notes = "c diffusion due to si self-interstitials", } +@Article{strane93, + author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L. + Doyle and S. T. Picraux and J. W. Mayer", + collaboration = "", + title = "Metastable SiGe{C} formation by solid phase epitaxy", + publisher = "AIP", + year = "1993", + journal = "Applied Physics Letters", + volume = "63", + number = "20", + pages = "2786--2788", + keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY + SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES; + ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD + SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE + EPITAXY; AMORPHIZATION", + URL = "http://link.aip.org/link/?APL/63/2786/1", + doi = "10.1063/1.110334", +} + @Article{strane94, author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T. Picraux and J. K. Watanabe and J. W. Mayer", @@ -2355,8 +2395,7 @@ Netherlands", title = "Boron implantations in silicon: {A} comparison of charge carrier and boron concentration profiles", - journal = "Applied Physics A: Materials Science \& - Processing", + journal = "Applied Physics A: Materials Science \& Processing", publisher = "Springer Berlin / Heidelberg", ISSN = "0947-8396", keyword = "Physics and Astronomy", @@ -2518,6 +2557,28 @@ quasi-direct one", } +@Conference{powell93, + author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A. + Ek and S. S. Iyer", + collaboration = "", + title = "Stability of strained Si[sub 1 - y]{C}[sub y] random + alloy layers", + publisher = "AVS", + year = "1993", + journal = "J. Vac. Sci. Technol. B", + volume = "11", + number = "3", + pages = "1064--1068", + location = "Ottawa (Canada)", + keywords = "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS; + METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR + BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA; + TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS", + URL = "http://link.aip.org/link/?JVB/11/1064/1", + doi = "10.1116/1.587008", + notes = "substitutional c in si by mbe", +} + @Article{osten99, author = "H. J. Osten and J. Griesche and S. Scalese", collaboration = "", @@ -2535,7 +2596,7 @@ compounds", URL = "http://link.aip.org/link/?APL/74/836/1", doi = "10.1063/1.123384", - notes = "substitutional c in si", + notes = "substitutional c in si by mbe", } @Article{hohenberg64, @@ -2587,6 +2648,24 @@ si, dft", } +@Article{yagi02, + title = "Phosphorous Doping of Strain-Induced + Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\ + by Low-Temperature Chemical Vapor Deposition", + author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and + Yuichi Yoneyama and Akira Yamada and Makoto Konagai", + journal = "Japanese Journal of Applied Physics", + volume = "41", + number = "Part 1, No. 4B", + pages = "2472--2475", + numpages = "3", + year = "2002", + URL = "http://jjap.jsap.jp/link?JJAP/41/2472/", + doi = "10.1143/JJAP.41.2472", + publisher = "The Japan Society of Applied Physics", + notes = "experimental charge carrier mobility in strained si", +} + @Article{chang05, title = "Electron Transport Model for Strained Silicon-Carbon Alloy", @@ -2600,7 +2679,7 @@ URL = "http://jjap.ipap.jp/link?JJAP/44/2257/", doi = "10.1143/JJAP.44.2257", publisher = "The Japan Society of Applied Physics", - notes = "enhance of electron mobility in starined si", + notes = "enhance of electron mobility in strained si", } @Article{osten97, diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex index b161271..5fe0564 100644 --- a/posic/thesis/sic.tex +++ b/posic/thesis/sic.tex @@ -324,17 +324,22 @@ Therefore, incorporation of C provides a promising method for suppressing TED en % lattice location of implanted carbon Radiation damage introduced during implantation and a high concentration of the implanted species, which results in the reduction of the topological constraint of the host lattice imposed on the implanted species, can affect the manner of impurity incorporation. -The probability of finding C, which will be most stable at sites for which the number of neighbors equals the natural valence, i.e. substitutionally on a regular Si site of a perfect lattice, is, thus, reduced at substitutional lattice sites and likewise increased to be found as an interstitial. -Depending on the way C is incorporated and whether precipitation occurs or not the volume is either reduced in the case of substitutionally incorporated C or expanded in the case of C interstitial formation \cite{goesele85}. - -There are, however, ... -In implanted Si the location of C is to a great deal incorporated as an interstitial atom due to a reduced topological contraint. -Other methods exist to realize only substitutional C. - -% -> my own links: strane etc ... -% -> skorupa 3.5: heterostructures - -\section{Assumed cubic silicon carbide conversion mechanisms} +The probability of finding C, which will be most stable at sites for which the number of neighbors equals the natural valence, i.e. substitutionally on a regular Si site of a perfect lattice, is, thus, reduced at substitutional lattice sites and likewise increased at interstitial sites. +Indeed, x-ray rocking curves reveal a positive lattice strain, which is decreased but still remains with increasing annealing temeprature, indicating the location of the majority of implanted C atoms at interstitial sites \cite{isomae93}. +Due to the absence of dislocations in the implanted region interstitial C is assumed to prevent clustering of implantation-induced Si self-interstitials by agglomeration of C-Si interstitials or the formation of SiC precipitates accompanied by a relaxation of the lattice strain. + +% link to strain engineering +However, there is great interest to incorporate C onto substitutional lattice sites, which results in a contraction of the Si lattice due to the smaller covalent radius of C compared to Si \cite{baker68}, causing tensile strain, which is applied to the Si lattice. +Thus, substitutional C enables strain engineering of Si and Si/Si$_{1-x}$Ge$_x$ heterostructures \cite{yagi02,chang05,osten97}, which is used to increase charge carrier mobilities in Si as well as to adjust its band structure \cite{soref91,kasper91}. +% increase of C at substitutional sites +Epitaxial layers with \unit[1.4]{at.\%} of substitutional C have been successfully synthesized in preamorphized Si$_{0.86}$Ge$_{0.14}$ layers, which were grown by CVD on Si substrates, using multiple-energy C implantation followed by solid-physe epitaxial regrowth at \unit[700]{$^{\circ}$C} \cite{strane93}. +The tensile strain induced by the C atoms is found to compensates the compressive strain present due to the Ge atoms. +Studies on the thermal stability of Si$_{1-y}$C$_y$/Si heterostructures formed in the same way and equal C concentrations showed a loss of substitutional C accompanied by strain relaxation for temperatures ranging from \unit[810-925]{$^{\circ}$C} and the formation of spherical 3C-SiC precipitates with diameters of \unit[2-4]{nm}, which are incoherent but aligned to the Si host \cite{strane94}. +During the initial stages of precipitation C-rich clusters are assumed, which maintain coherency with the Si matrix and the associated biaxial strain. +Using this technique a metastable solubility limit was achieved, which corresponds to a C concentration exceeding the solid solubility limit at the Si melting point by nearly three orders of magnitude and, furthermore, a reduction of the defect denisty near the metastable solubility limit is assumed if the regrowth temperature is increased by a rapid thermal annealing process \cite{strane96}. +By MBE ... \cite{powell93,osten99} + +\section{Assumed silicon carbide conversion mechanisms} \label{section:assumed_prec} Although much progress has been made in 3C-SiC thin film growth in the above-mentioned growth methods during the last decades, there is still potential -- 2.39.2