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 {\LARGE {\bf Molecular dynamics simulation study
              of the silicon carbide precipitation process}\\}
 \vspace{16pt}
 \textsc{\Large \underline{F. Zirkelbach}$^1$, J. K. N. Lindner$^1$,
         K. Nordlund$^2$, B. Stritzker$^1$}\\
 \vspace{16pt}
 $^1$ Experimentalphysik IV, Institut f"ur Physik, Universit"at Augsburg,\\
 Universit"atsstr. 1, D-86135 Augsburg, Germany\\
 \vspace{16pt}
 $^2$ Accelerator Laboratory, Department of Physical Sciences,
 University of Helsinki,\\
 Pietari Kalmink. 2, 00014 Helsinki, Finland\\
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\section*{Abstract}
The precipitation process of silicon carbide in heavily carbon doped silicon is not yet understood for the most part.
High resolution transmission electron microscopy indicates that in a first step carbon atoms form $C-Si$ dumbbells on regular $Si$ lattice sites which agglomerate into large clusters.
In a second step, when the cluster size reaches a radius of a few $nm$, the high interfacial energy due to the $SiC$/$Si$ lattice misfit of almost $20 \, \%$ is overcome and the precipitation occurs.
A molecular dynamics simulation approach is used to gain information of the precipitation process on the atomic level.
A newly parametrized Tersoff like bond-order potential is used to model the system appropriately.
The present work discusses the first results gained by the molecular dynamics simulation.

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