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 {\LARGE {\bf Molecular dynamics simulation
              of defect formation and precipitation
	      in heavily carbon doped silicon.
              }\\}
 \vspace{16pt}
 \textsc{\Large \underline{F. Zirkelbach}$^1$, J. K. N. Lindner$^1$,
         K. Nordlund$^2$, B. Stritzker$^1$}\\
 \vspace{16pt}
 $^1$ Experimentalphysik IV, Institut f"ur Physik, Universit"at Augsburg,\\
 Universit"atsstr. 1, D-86135 Augsburg, Germany\\
 \vspace{16pt}
 $^2$ Accelerator Laboratory, Department of Physical Sciences,
 University of Helsinki,\\
 Pietari Kalmink. 2, 00014 Helsinki, Finland\\
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\section*{Abstract}
The precipitation process of silicon carbide in heavily carbon doped silicon is not yet understood for the most part.
High resolution transmission electron microscopy indicates that in a first step carbon atoms form $C-Si$ dumbbells on regular $Si$ lattice sites which agglomerate into large clusters.
In a second step, when the cluster size reaches a radius of a few $nm$, the high interfacial energy due to the $SiC$/$Si$ lattice misfit of almost $20 \, \%$ is overcome and the precipitation occurs.
By simulation details of the precipitation process can be obtained on the atomic level.
A newly parametrized Tersoff like bond-order potential is used to model the system appropriately.
First results gained by molecular dynamics simulations using this potential are presented.
The influence of the amount and placement of inserted carbon atoms on the defect formation and structural changes is discussed.
Furthermore a minimal carbon concentration necessary for precipitation is examined by simulation.

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