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\begin{document}

\title{the molecular dynamic simulation {\em posic}}
\subtitle{atomistic simulation of the precipitation process of silicon carbide in carbon doped silicon}
\author[F. Zirkelbach]{Frank Zirkelbach \\ \texttt{frank.zirkelbach@physik.uni-augsburg.de}}
\institute{
experimental physics IV\\
university of augsburg
}
\date{june 2006}

\AtBeginSection[]
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  \begin{frame}<beamer>
    \frametitle{agenda}
    \tableofcontents[currentsection]
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\begin{frame}
  \titlepage
\end{frame}

\begin{frame}
  \frametitle{agenda}
  \tableofcontents%[pausesections]
\end{frame}

\section{introduction}

  \subsection{as things are now}

\begin{frame}
  \frametitle{introduction}
  \framesubtitle{as things are now}
  \begin{block}{precipitation process of $SiC$ in silicon}
    \begin{itemize}
      \item first steps:\\
            (investigated by high resolution electron microscopy)
            \begin{itemize}
              \item formation of $C-Si$-dumbbells on regular $c-Si$ lattice
	            sites
	      \item agglomeration into large clusters (embryos)
            \end{itemize}
      \item second step:\\
            (not accessible by experiment)
            \begin{itemize}
	      \item cluster size reaches a radius of $2-4 \, nm$
	      \item high interfacial energy due to the $SiC/Si$ lattice
	            mismatch (~$20 \, \%$) is overcome
	      \item precipitation process of $SiC$
            \end{itemize}
    \end{itemize}
  \end{block}
\end{frame}

  \subsection{motivation}

\begin{frame}
  \frametitle{introduction}
  \framesubtitle{motivation}
  \begin{block}{why studying the $SiC$ nucleation process}
  \begin{itemize}
    \item basic research
    \item understanding the 2 steps of the precipitation process\\
          $\Rightarrow$ facilitation of the $SiC$ heteroepitaxy on $c-Si$\\
	  $\Rightarrow$ suppress nucleation of $SiC$ in certain applications
    \item $SiC$: most rapidly developed wide band gap semiconductor suitable
          in high temperature, high frequency and high power applications
  \end{itemize}
  \end{block}
\end{frame}

\begin{frame}
  \frametitle{introduction}
  \framesubtitle{motivation}
  \begin{block}{why doing an atomistic simulation}
  \begin{itemize}
    \item precipitation process is not understood for the most part
    \item monitor the atomic structures in early stages of the embryo formation
    \item atomic rearrangement in the most critical second step\\
          (which is experimentally not accessible)
    \item information about the atomic structure and interface of the
          $SiC$ precipitates and the crystalline silicon\\
	  (including stress fields)
  \end{itemize}
  \end{block}
\end{frame}

\section{experimental observations}

\section{simulation}

  \subsection{introduction to atomistic simulations}

\begin{frame}
  \frametitle{simulation}
  \framesubtitle{introduction to atomistic simulations}

\end{frame}

  \subsection{computational methods}

  \subsection{the {\em posic} simulation}

\section{results}

\section{summary \& outlook}

\end{document}

