metastable",
}
+@Article{chaussende07,
+ author = "D. Chaussende and P. J. Wellmann and M. Pons",
+ title = "Status of Si{C} bulk growth processes",
+ journal = "Journal of Physics D: Applied Physics",
+ volume = "40",
+ number = "20",
+ pages = "6150",
+ URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
+ year = "2007",
+ notes = "review of sic single crystal growth methods, process
+ modelling",
+}
+
@Article{feynman39,
title = "Forces in Molecules",
author = "R. P. Feynman",
doi = "10.1063/1.121136",
notes = "micropipe free 6h-sic pvt growth",
}
+
+@Article{pirouz87,
+ author = "P. Pirouz and C. M. Chorey and J. A. Powell",
+ collaboration = "",
+ title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
+ publisher = "AIP",
+ year = "1987",
+ journal = "Applied Physics Letters",
+ volume = "50",
+ number = "4",
+ pages = "221--223",
+ keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
+ MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
+ VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
+ ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
+ BOUNDARIES",
+ URL = "http://link.aip.org/link/?APL/50/221/1",
+ doi = "10.1063/1.97667",
+ notes = "apb 3c-sic heteroepitaxy on si",
+}