% bibliography database
%
-% molecular dynamics: basics / potential
-
-@article{albe_sic_pot,
- author = {Paul Erhart and Karsten Albe},
- title = {Analytical potential for atomistic simulations of silicon, carbon,
- and silicon carbide},
- publisher = {APS},
- year = {2005},
- journal = {Phys. Rev. B},
- volume = {71},
- number = {3},
- eid = {035211},
- numpages = {14},
- pages = {035211},
- notes = {alble reparametrization, analytical bond oder potential (ABOP)},
- keywords = {silicon; elemental semiconductors; carbon; silicon compounds;
- wide band gap semiconductors; elasticity; enthalpy;
- point defects; crystallographic shear; atomic forces},
- url = {http://link.aps.org/abstract/PRB/v71/e035211},
- doi = {10.1103/PhysRevB.71.035211}
+@Article{albe_sic_pot,
+ author = "Paul Erhart and Karsten Albe",
+ title = "Analytical potential for atomistic simulations of
+ silicon, carbon, and silicon carbide",
+ publisher = "APS",
+ year = "2005",
+ journal = "Phys. Rev. B",
+ volume = "71",
+ number = "3",
+ eid = "035211",
+ numpages = "14",
+ pages = "035211",
+ notes = "alble reparametrization, analytical bond oder
+ potential (ABOP)",
+ keywords = "silicon; elemental semiconductors; carbon; silicon
+ compounds; wide band gap semiconductors; elasticity;
+ enthalpy; point defects; crystallographic shear; atomic
+ forces",
+ URL = "http://link.aps.org/abstract/PRB/v71/e035211",
+ doi = "10.1103/PhysRevB.71.035211",
}
@Article{albe2002,
- title = {Modeling the metal-semiconductor interaction:
- Analytical bond-order potential for platinum-carbon},
- author = {Albe, Karsten and Nordlund, Kai and Averback, Robert S.},
- journal = {Phys. Rev. B},
- volume = {65},
- number = {19},
- pages = {195124},
- numpages = {11},
- year = {2002},
- month = {May},
- doi = {10.1103/PhysRevB.65.195124},
- publisher = {American Physical Society},
- notes = {derivation of albe bond order formalism},
-}
-
-@ARTICLE{mattoni2007,
- author = {{Mattoni}, A. and {Ippolito}, M. and {Colombo}, L.},
- title = "{Atomistic modeling of brittleness in covalent materials}",
- journal = {Phys. Rev. B},
- year = 2007,
- month = dec,
- volume = 76,
- number = 22,
- pages = {224103-+},
- doi = {10.1103/PhysRevB.76.224103},
- notes = {adopted tersoff potential for Si, C, Ge ad SiC;
- longe(r)-range-interactions, brittle propagation of fracture,
- more available potentials, universal energy relation (uer),
- minimum range model (mrm)}
+ title = "Modeling the metal-semiconductor interaction:
+ Analytical bond-order potential for platinum-carbon",
+ author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
+ journal = "Phys. Rev. B",
+ volume = "65",
+ number = "19",
+ pages = "195124",
+ numpages = "11",
+ year = "2002",
+ month = may,
+ doi = "10.1103/PhysRevB.65.195124",
+ publisher = "American Physical Society",
+ notes = "derivation of albe bond order formalism",
+}
+
+@Article{bean71,
+ title = "The solubility of carbon in pulled silicon crystals",
+ journal = "Journal of Physics and Chemistry of Solids",
+ volume = "32",
+ number = "6",
+ pages = "1211--1219",
+ year = "1971",
+ note = "",
+ ISSN = "0022-3697",
+ doi = "DOI: 10.1016/S0022-3697(71)80179-8",
+ URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
+ author = "A. R. Bean and R. C. Newman",
+ notes = "experimental solubility data of carbon in silicon",
+}
+
+@Article{capano97,
+ author = "M. A. Capano and R. J. Trew",
+ title = "Silicon Carbide Electronic Materials and Devices",
+ journal = "MRS Bull.",
+ volume = "22",
+ pages = "19",
+ year = "1997",
+}
+
+@Article{fischer90,
+ author = "G. R. Fisher and P. Barnes",
+ title = "Towards a unified view of polytypism in silicon
+ carbide",
+ journal = "Philos. Mag. B",
+ volume = "61",
+ pages = "217--236",
+ year = "1990",
+ notes = "sic polytypes",
+}
+
+@Article{koegler03,
+ author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
+ A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
+ Serre and A. Perez-Rodriguez",
+ title = "Synthesis of nano-sized Si{C} precipitates in Si by
+ simultaneous dual-beam implantation of {C}+ and Si+
+ ions",
+ journal = "Appl. Phys. A: Mater. Sci. Process.",
+ volume = "76",
+ pages = "827--835",
+ month = mar,
+ year = "2003",
+ notes = "dual implantation, sic prec enhanced by vacancies,
+ precipitation by interstitial and substitutional
+ carbon, both mechanisms explained + refs",
+}
+
+@Article{skorupa96,
+ title = "Carbon-mediated effects in silicon and in
+ silicon-related materials",
+ journal = "Materials Chemistry and Physics",
+ volume = "44",
+ number = "2",
+ pages = "101--143",
+ year = "1996",
+ note = "",
+ ISSN = "0254-0584",
+ doi = "DOI: 10.1016/0254-0584(95)01673-I",
+ URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
+ author = "W. Skorupa and R. A. Yankov",
+ notes = "review of silicon carbon compound",
+}
+
+@Book{laplace,
+ author = "P. S. de Laplace",
+ title = "Th\'eorie analytique des probabilit\'es",
+ series = "Oeuvres Compl\`etes de Laplace",
+ volume = "VII",
+ publisher = "Gauthier-Villars",
+ year = "1820",
+}
+
+@Article{mattoni2007,
+ author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
+ title = "{Atomistic modeling of brittleness in covalent
+ materials}",
+ journal = "Phys. Rev. B",
+ year = "2007",
+ month = dec,
+ volume = "76",
+ number = "22",
+ pages = "224103",
+ doi = "10.1103/PhysRevB.76.224103",
+ notes = "adopted tersoff potential for Si, C, Ge ad SiC;
+ longe(r)-range-interactions, brittle propagation of
+ fracture, more available potentials, universal energy
+ relation (uer), minimum range model (mrm)",
+}
+
+@Article{balamane92,
+ title = "Comparative study of silicon empirical interatomic
+ potentials",
+ author = "H. Balamane and T. Halicioglu and W. A. Tiller",
+ journal = "Phys. Rev. B",
+ volume = "46",
+ number = "4",
+ pages = "2250--2279",
+ numpages = "29",
+ year = "1992",
+ month = jul,
+ doi = "10.1103/PhysRevB.46.2250",
+ publisher = "American Physical Society",
+ notes = "comparison of classical potentials for si",
}
@Article{koster2002,
- title = {Stress relaxation in $a-Si$ induced by ion bombardment},
- author = {M. Koster, H. M. Urbassek},
- journal = {Phys. Rev. B},
- volume = {62},
- number = {16},
- pages = {11219--11224},
- numpages = {5},
- year = {2000},
- month = {Oct},
- doi = {10.1103/PhysRevB.62.11219},
- publisher = {American Physical Society},
- notes = {virial derivation for 3-body tersoff potential}
+ title = "Stress relaxation in $a-Si$ induced by ion
+ bombardment",
+ author = "H. M. Urbassek M. Koster",
+ journal = "Phys. Rev. B",
+ volume = "62",
+ number = "16",
+ pages = "11219--11224",
+ numpages = "5",
+ year = "2000",
+ month = oct,
+ doi = "10.1103/PhysRevB.62.11219",
+ publisher = "American Physical Society",
+ notes = "virial derivation for 3-body tersoff potential",
}
@Article{breadmore99,
- title = {Direct simulation of ion-beam-induced stressing
- and amorphization of silicon},
- author = {K. M. Beardmore, N. Gr\o{}nbech-Jensen},
- journal = {Phys. Rev. B},
- volume = {60},
- number = {18},
- pages = {12610--12616},
- numpages = {6},
- year = {1999},
- month = {Nov},
- doi = {10.1103/PhysRevB.60.12610},
- publisher = {American Physical Society},
- notes = {virial derivation for 3-body tersoff potential}
+ title = "Direct simulation of ion-beam-induced stressing and
+ amorphization of silicon",
+ author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
+ journal = "Phys. Rev. B",
+ volume = "60",
+ number = "18",
+ pages = "12610--12616",
+ numpages = "6",
+ year = "1999",
+ month = nov,
+ doi = "10.1103/PhysRevB.60.12610",
+ publisher = "American Physical Society",
+ notes = "virial derivation for 3-body tersoff potential",
+}
+
+@Article{moissan04,
+ author = "Henri Moissan",
+ title = "Nouvelles recherches sur la météorité de Cañon
+ Diablo",
+ journal = "Comptes rendus de l'Académie des Sciences",
+ volume = "139",
+ pages = "773--786",
+ year = "1904",
+}
+
+@Book{park98,
+ author = "Y. S. Park",
+ title = "Si{C} Materials and Devices",
+ publisher = "Academic Press",
+ address = "San Diego",
+ year = "1998",
+}
+
+@Article{tsvetkov98,
+ author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
+ Calvin H. Carter Jr. and D. Asbury",
+ title = "Si{C} Seeded Boule Growth",
+ journal = "Materials Science Forum",
+ volume = "264-268",
+ pages = "3--8",
+ year = "1998",
+ notes = "modified lely process, micropipes",
}
@Article{verlet67,
- title = {Computer "Experiments" on Classical Fluids. I. Thermodynamical Properties of Lennard-Jones Molecules},
- author = {Verlet, Loup },
- journal = {Phys. Rev.},
- volume = {159},
- number = {1},
- pages = {98},
- year = {1967},
- month = {Jul},
- doi = {10.1103/PhysRev.159.98},
- publisher = {American Physical Society},
- notes = {velocity verlet integration algorithm equation of motion}
-}
-
-@article{berendsen84,
- author = {H. J. C. Berendsen and J. P. M. Postma and W. F. van Gunsteren
- and A. DiNola and J. R. Haak},
- collaboration = {},
- title = {Molecular dynamics with coupling to an external bath},
- publisher = {AIP},
- year = {1984},
- journal = {The Journal of Chemical Physics},
- volume = {81},
- number = {8},
- pages = {3684-3690},
- keywords = {MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
- COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS},
- url = {http://link.aip.org/link/?JCP/81/3684/1},
- doi = {10.1063/1.448118},
- notes = {berendsen thermostat barostat}
-}
-
-@article{huang95,
- author={Hanchen Huang and N M Ghoniem and J K Wong and M Baskes},
- title={Molecular dynamics determination of defect energetics in beta -SiC
- using three representative empirical potentials},
- journal={Modelling and Simulation in Materials Science and Engineering},
- volume={3},
- number={5},
- pages={615-627},
- url={http://stacks.iop.org/0965-0393/3/615},
- notes = {comparison of tersoff, pearson and eam for defect energetics in sic;
- (m)eam parameters for sic},
- year={1995}
-}
-
-@Article{tersoff89,
- title = {Relationship between the embedded-atom method and
- Tersoff potentials},
- author = {Brenner, Donald W.},
- journal = {Phys. Rev. Lett.},
- volume = {63},
- number = {9},
- pages = {1022},
- numpages = {1},
- year = {1989},
- month = {Aug},
- doi = {10.1103/PhysRevLett.63.1022},
- publisher = {American Physical Society},
- notes = {relation of tersoff and eam potential}
-}
-
-% molecular dynamics: applications
+ title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
+ Thermodynamical Properties of Lennard-Jones Molecules",
+ author = "Loup Verlet",
+ journal = "Phys. Rev.",
+ volume = "159",
+ number = "1",
+ pages = "98",
+ year = "1967",
+ month = jul,
+ doi = "10.1103/PhysRev.159.98",
+ publisher = "American Physical Society",
+ notes = "velocity verlet integration algorithm equation of
+ motion",
+}
+
+@Article{berendsen84,
+ author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
+ Gunsteren and A. DiNola and J. R. Haak",
+ collaboration = "",
+ title = "Molecular dynamics with coupling to an external bath",
+ publisher = "AIP",
+ year = "1984",
+ journal = "J. Chem. Phys.",
+ volume = "81",
+ number = "8",
+ pages = "3684--3690",
+ keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
+ COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
+ URL = "http://link.aip.org/link/?JCP/81/3684/1",
+ doi = "10.1063/1.448118",
+ notes = "berendsen thermostat barostat",
+}
+
+@Article{huang95,
+ author = "Hanchen Huang and N M Ghoniem and J K Wong and M
+ Baskes",
+ title = "Molecular dynamics determination of defect energetics
+ in beta -Si{C} using three representative empirical
+ potentials",
+ journal = "Modell. Simul. Mater. Sci. Eng.",
+ volume = "3",
+ number = "5",
+ pages = "615--627",
+ URL = "http://stacks.iop.org/0965-0393/3/615",
+ notes = "comparison of tersoff, pearson and eam for defect
+ energetics in sic; (m)eam parameters for sic",
+ year = "1995",
+}
+
+@Article{brenner89,
+ title = "Relationship between the embedded-atom method and
+ Tersoff potentials",
+ author = "Donald W. Brenner",
+ journal = "Phys. Rev. Lett.",
+ volume = "63",
+ number = "9",
+ pages = "1022",
+ numpages = "1",
+ year = "1989",
+ month = aug,
+ doi = "10.1103/PhysRevLett.63.1022",
+ publisher = "American Physical Society",
+ notes = "relation of tersoff and eam potential",
+}
@Article{batra87,
- title = {Molecular-dynamics study of self-interstitials in silicon},
- author = {Inder P. Batra, Farid F. Abraham, S. Ciraci},
- journal = {Phys. Rev. B},
- volume = {35},
- number = {18},
- pages = {9552--9558},
- numpages = {6},
- year = {1987},
- month = {Jun},
- doi = {10.1103/PhysRevB.35.9552},
- publisher = {American Physical Society},
- notes = {selft-interstitials in silicon, stillinger-weber,
- calculation of defect formation energy, defect interstitial types}
+ title = "Molecular-dynamics study of self-interstitials in
+ silicon",
+ author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
+ journal = "Phys. Rev. B",
+ volume = "35",
+ number = "18",
+ pages = "9552--9558",
+ numpages = "6",
+ year = "1987",
+ month = jun,
+ doi = "10.1103/PhysRevB.35.9552",
+ publisher = "American Physical Society",
+ notes = "selft-interstitials in silicon, stillinger-weber,
+ calculation of defect formation energy, defect
+ interstitial types",
}
@Article{schober89,
- title = {Extended interstitials in silicon and germanium},
- author = {H. R. Schober},
- journal = {Phys. Rev. B},
- volume = {39},
- number = {17},
- pages = {13013--13015},
- numpages = {2},
- year = {1989},
- month = {Jun},
- doi = {10.1103/PhysRevB.39.13013},
- publisher = {American Physical Society},
- notes = {stillinger-weber silicon 110 stable and metastable dumbbell
- configuration}
+ title = "Extended interstitials in silicon and germanium",
+ author = "H. R. Schober",
+ journal = "Phys. Rev. B",
+ volume = "39",
+ number = "17",
+ pages = "13013--13015",
+ numpages = "2",
+ year = "1989",
+ month = jun,
+ doi = "10.1103/PhysRevB.39.13013",
+ publisher = "American Physical Society",
+ notes = "stillinger-weber silicon 110 stable and metastable
+ dumbbell configuration",
}
-@Article{gao02,
- title = {Cascade overlap and amorphization in $3C-SiC:$
- Defect accumulation, topological features, and disordering},
- author = {Gao, F. and Weber, W. J.},
- journal = {Phys. Rev. B},
- volume = {66},
- number = {2},
- pages = {024106},
- numpages = {10},
- year = {2002},
- month = {Jul},
- doi = {10.1103/PhysRevB.66.024106},
- publisher = {American Physical Society},
- note = {sic intro, si cascade in 3c-sic, amorphization, tersoff modified,
- pair correlation of amorphous sic, md result analyze}
+@Article{gao02a,
+ title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
+ Defect accumulation, topological features, and
+ disordering",
+ author = "F. Gao and W. J. Weber",
+ journal = "Phys. Rev. B",
+ volume = "66",
+ number = "2",
+ pages = "024106",
+ numpages = "10",
+ year = "2002",
+ month = jul,
+ doi = "10.1103/PhysRevB.66.024106",
+ publisher = "American Physical Society",
+ notes = "sic intro, si cascade in 3c-sic, amorphization,
+ tersoff modified, pair correlation of amorphous sic, md
+ result analyze",
}
@Article{devanathan98,
- title = "Computer simulation of a 10 keV Si displacement cascade in SiC",
- journal = "Nuclear Instruments and Methods in Physics Research Section B:
- Beam Interactions with Materials and Atoms",
- volume = "141",
- number = "1-4",
- pages = "118 - 122",
- year = "1998",
- note = "",
- issn = "0168-583X",
- doi = "DOI: 10.1016/S0168-583X(98)00084-6",
- author = "R. Devanathan and W. J. Weber and T. Diaz de la Rubia",
- notes = {modified tersoff short range potential, ab initio 3c-sic}
+ title = "Computer simulation of a 10 ke{V} Si displacement
+ cascade in Si{C}",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
+ volume = "141",
+ number = "1-4",
+ pages = "118--122",
+ year = "1998",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(98)00084-6",
+ author = "R. Devanathan and W. J. Weber and T. Diaz de la
+ Rubia",
+ notes = "modified tersoff short range potential, ab initio
+ 3c-sic",
}
@Article{devanathan98_2,
- title = "Displacement threshold energies in [beta]-SiC",
- journal = "Journal of Nuclear Materials",
- volume = "253",
- number = "1-3",
- pages = "47 - 52",
- year = "1998",
- issn = "0022-3115",
- doi = "DOI: 10.1016/S0022-3115(97)00304-8",
- author = "R. Devanathan and T. Diaz de la Rubia and W. J. Weber",
- notes = "modified tersoff, ab initio, combined ab initio tersoff"
+ title = "Displacement threshold energies in [beta]-Si{C}",
+ journal = "J. Nucl. Mater.",
+ volume = "253",
+ number = "1-3",
+ pages = "47--52",
+ year = "1998",
+ ISSN = "0022-3115",
+ doi = "DOI: 10.1016/S0022-3115(97)00304-8",
+ author = "R. Devanathan and T. Diaz de la Rubia and W. J.
+ Weber",
+ notes = "modified tersoff, ab initio, combined ab initio
+ tersoff",
}
-@Article{batra87,
- title = {SiC/Si heteroepitaxial growth},
- author = {M. Kitabatake},
- journal = {Thin Solid Films},
- volume = {369},
- pages = {257--264},
- numpages = {8},
- year = {2000},
- notes = {md simulation, sic si heteroepitaxy, mbe}
+@Article{kitabatake00,
+ title = "Si{C}/Si heteroepitaxial growth",
+ author = "M. Kitabatake",
+ journal = "Thin Solid Films",
+ volume = "369",
+ pages = "257--264",
+ numpages = "8",
+ year = "2000",
+ notes = "md simulation, sic si heteroepitaxy, mbe",
}
-% tight binding
-
@Article{tang97,
- title = {Intrinsic point defects in crystalline silicon:
- Tight-binding molecular dynamics studies of self-diffusion,
- interstitial-vacancy recombination, and formation volumes},
- author = {M. Tang, L. Colombo, J. Zhu, T. Diaz de la Rubia},
- journal = {Phys. Rev. B},
- volume = {55},
- number = {21},
- pages = {14279--14289},
- numpages = {10},
- year = {1997},
- month = {Jun},
- doi = {10.1103/PhysRevB.55.14279},
- publisher = {American Physical Society},
- notes = {si self interstitial, diffusion, tbmd}
+ title = "Intrinsic point defects in crystalline silicon:
+ Tight-binding molecular dynamics studies of
+ self-diffusion, interstitial-vacancy recombination, and
+ formation volumes",
+ author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
+ Rubia",
+ journal = "Phys. Rev. B",
+ volume = "55",
+ number = "21",
+ pages = "14279--14289",
+ numpages = "10",
+ year = "1997",
+ month = jun,
+ doi = "10.1103/PhysRevB.55.14279",
+ publisher = "American Physical Society",
+ notes = "si self interstitial, diffusion, tbmd",
}
-@Article{tang97,
- title = {Tight-binding theory of native point defects in silicon},
- author = {L. Colombo},
- journal = {Annu. Rev. Mater. Res.},
- volume = {32},
- pages = {271--295},
- numpages = {25},
- year = {2002},
- doi = {10.1146/annurev.matsci.32.111601.103036},
- publisher = {Annual Reviews},
- notes = {si self interstitial, tbmd, virial stress}
+@Article{johnson98,
+ author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
+ Rubia",
+ collaboration = "",
+ title = "A kinetic Monte--Carlo study of the effective
+ diffusivity of the silicon self-interstitial in the
+ presence of carbon and boron",
+ publisher = "AIP",
+ year = "1998",
+ journal = "J. Appl. Phys.",
+ volume = "84",
+ number = "4",
+ pages = "1963--1967",
+ keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
+ CARBON ADDITIONS; BORON ADDITIONS; elemental
+ semiconductors; self-diffusion",
+ URL = "http://link.aip.org/link/?JAP/84/1963/1",
+ doi = "10.1063/1.368328",
+ notes = "kinetic monte carlo of si self interstitial
+ diffsuion",
}
-% mixed
+@Article{bar-yam84,
+ title = "Barrier to Migration of the Silicon
+ Self-Interstitial",
+ author = "Y. Bar-Yam and J. D. Joannopoulos",
+ journal = "Phys. Rev. Lett.",
+ volume = "52",
+ number = "13",
+ pages = "1129--1132",
+ numpages = "3",
+ year = "1984",
+ month = mar,
+ doi = "10.1103/PhysRevLett.52.1129",
+ publisher = "American Physical Society",
+ notes = "si self-interstitial migration barrier",
+}
+
+@Article{bar-yam84_2,
+ title = "Electronic structure and total-energy migration
+ barriers of silicon self-interstitials",
+ author = "Y. Bar-Yam and J. D. Joannopoulos",
+ journal = "Phys. Rev. B",
+ volume = "30",
+ number = "4",
+ pages = "1844--1852",
+ numpages = "8",
+ year = "1984",
+ month = aug,
+ doi = "10.1103/PhysRevB.30.1844",
+ publisher = "American Physical Society",
+}
+
+@Article{bloechl93,
+ title = "First-principles calculations of self-diffusion
+ constants in silicon",
+ author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
+ and D. B. Laks and W. Andreoni and S. T. Pantelides",
+ journal = "Phys. Rev. Lett.",
+ volume = "70",
+ number = "16",
+ pages = "2435--2438",
+ numpages = "3",
+ year = "1993",
+ month = apr,
+ doi = "10.1103/PhysRevLett.70.2435",
+ publisher = "American Physical Society",
+ notes = "si self int diffusion by ab initio md, formation
+ entropy calculations",
+}
+
+@Article{colombo02,
+ title = "Tight-binding theory of native point defects in
+ silicon",
+ author = "L. Colombo",
+ journal = "Annu. Rev. Mater. Res.",
+ volume = "32",
+ pages = "271--295",
+ numpages = "25",
+ year = "2002",
+ doi = "10.1146/annurev.matsci.32.111601.103036",
+ publisher = "Annual Reviews",
+ notes = "si self interstitial, tbmd, virial stress",
+}
+
+@Article{al-mushadani03,
+ title = "Free-energy calculations of intrinsic point defects in
+ silicon",
+ author = "O. K. Al-Mushadani and R. J. Needs",
+ journal = "Phys. Rev. B",
+ volume = "68",
+ number = "23",
+ pages = "235205",
+ numpages = "8",
+ year = "2003",
+ month = dec,
+ doi = "10.1103/PhysRevB.68.235205",
+ publisher = "American Physical Society",
+ notes = "formation energies of intrinisc point defects in
+ silicon, si self interstitials, free energy",
+}
+
+@Article{goedecker02,
+ title = "A Fourfold Coordinated Point Defect in Silicon",
+ author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
+ journal = "Phys. Rev. Lett.",
+ volume = "88",
+ number = "23",
+ pages = "235501",
+ numpages = "4",
+ year = "2002",
+ month = may,
+ doi = "10.1103/PhysRevLett.88.235501",
+ publisher = "American Physical Society",
+ notes = "first time ffcd, fourfold coordinated point defect in
+ silicon",
+}
+
+@Article{sahli05,
+ title = "Ab initio molecular dynamics simulation of
+ self-interstitial diffusion in silicon",
+ author = "Beat Sahli and Wolfgang Fichtner",
+ journal = "Phys. Rev. B",
+ volume = "72",
+ number = "24",
+ pages = "245210",
+ numpages = "6",
+ year = "2005",
+ month = dec,
+ doi = "10.1103/PhysRevB.72.245210",
+ publisher = "American Physical Society",
+ notes = "si self int, diffusion, barrier height, voronoi
+ mapping applied",
+}
+
+@Article{hobler05,
+ title = "Ab initio calculations of the interaction between
+ native point defects in silicon",
+ journal = "Mater. Sci. Eng., B",
+ volume = "124-125",
+ number = "",
+ pages = "368--371",
+ year = "2005",
+ note = "EMRS 2005, Symposium D - Materials Science and Device
+ Issues for Future Technologies",
+ ISSN = "0921-5107",
+ doi = "DOI: 10.1016/j.mseb.2005.08.072",
+ URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
+ author = "G. Hobler and G. Kresse",
+ notes = "vasp intrinsic si defect interaction study, capture
+ radius",
+}
+
+@Article{ma10,
+ title = "Ab initio study of self-diffusion in silicon over a
+ wide temperature range: Point defect states and
+ migration mechanisms",
+ author = "Shangyi Ma and Shaoqing Wang",
+ journal = "Phys. Rev. B",
+ volume = "81",
+ number = "19",
+ pages = "193203",
+ numpages = "4",
+ year = "2010",
+ month = may,
+ doi = "10.1103/PhysRevB.81.193203",
+ publisher = "American Physical Society",
+ notes = "si self interstitial diffusion + refs",
+}
+
+@Article{posselt06,
+ title = "Atomistic simulations on the thermal stability of the
+ antisite pair in 3{C}- and 4{H}-Si{C}",
+ author = "M. Posselt and F. Gao and W. J. Weber",
+ journal = "Phys. Rev. B",
+ volume = "73",
+ number = "12",
+ pages = "125206",
+ numpages = "8",
+ year = "2006",
+ month = mar,
+ doi = "10.1103/PhysRevB.73.125206",
+ publisher = "American Physical Society",
+}
+
+@Article{posselt08,
+ title = "Correlation between self-diffusion in Si and the
+ migration mechanisms of vacancies and
+ self-interstitials: An atomistic study",
+ author = "M. Posselt and F. Gao and H. Bracht",
+ journal = "Phys. Rev. B",
+ volume = "78",
+ number = "3",
+ pages = "035208",
+ numpages = "9",
+ year = "2008",
+ month = jul,
+ doi = "10.1103/PhysRevB.78.035208",
+ publisher = "American Physical Society",
+ notes = "si self-interstitial and vacancy diffusion, stillinger
+ weber and tersoff",
+}
@Article{gao2001,
- title = {Ab initio and empirical-potential studies of defect properties
- in $3C-SiC$ },
- author = {F. Gao, E. J. Bylaska, W. J. Weber, L. R. Corrales},
- journal = {Phys. Rev. B},
- volume = {64},
- number = {24},
- pages = {245208},
- numpages = {7},
- year = {2001},
- month = {Dec},
- doi = {10.1103/PhysRevB.64.245208},
- publisher = {American Physical Society},
- notes = {defects in 3c-sic}
+ title = "Ab initio and empirical-potential studies of defect
+ properties in $3{C}-Si{C}$",
+ author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
+ Corrales",
+ journal = "Phys. Rev. B",
+ volume = "64",
+ number = "24",
+ pages = "245208",
+ numpages = "7",
+ year = "2001",
+ month = dec,
+ doi = "10.1103/PhysRevB.64.245208",
+ publisher = "American Physical Society",
+ notes = "defects in 3c-sic",
+}
+
+@Article{gao02,
+ title = "Empirical potential approach for defect properties in
+ 3{C}-Si{C}",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
+ volume = "191",
+ number = "1-4",
+ pages = "487--496",
+ year = "2002",
+ note = "",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(02)00600-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
+ author = "Fei Gao and William J. Weber",
+ keywords = "Empirical potential",
+ keywords = "Defect properties",
+ keywords = "Silicon carbide",
+ keywords = "Computer simulation",
+ notes = "sic potential, brenner type, like erhart/albe",
+}
+
+@Article{gao04,
+ title = "Atomistic study of intrinsic defect migration in
+ 3{C}-Si{C}",
+ author = "Fei Gao and William J. Weber and M. Posselt and V.
+ Belko",
+ journal = "Phys. Rev. B",
+ volume = "69",
+ number = "24",
+ pages = "245205",
+ numpages = "5",
+ year = "2004",
+ month = jun,
+ doi = "10.1103/PhysRevB.69.245205",
+ publisher = "American Physical Society",
+ notes = "defect migration in sic",
+}
+
+@Article{gao07,
+ author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
+ W. J. Weber",
+ collaboration = "",
+ title = "Ab Initio atomic simulations of antisite pair recovery
+ in cubic silicon carbide",
+ publisher = "AIP",
+ year = "2007",
+ journal = "Appl. Phys. Lett.",
+ volume = "90",
+ number = "22",
+ eid = "221915",
+ numpages = "3",
+ pages = "221915",
+ keywords = "ab initio calculations; silicon compounds; antisite
+ defects; wide band gap semiconductors; molecular
+ dynamics method; density functional theory;
+ electron-hole recombination; photoluminescence;
+ impurities; diffusion",
+ URL = "http://link.aip.org/link/?APL/90/221915/1",
+ doi = "10.1063/1.2743751",
}
@Article{mattoni2002,
- title = {Self-interstitial trapping by carbon complexes in crystalline silicon},
- author = {Mattoni, A. and Bernardini, F. and Colombo, L. },
- journal = {Phys. Rev. B},
- volume = {66},
- number = {19},
- pages = {195214},
- numpages = {6},
- year = {2002},
- month = {Nov},
- doi = {10.1103/PhysRevB.66.195214},
- publisher = {American Physical Society},
- notes = {c in c-si, diffusion, interstitial configuration + links}
-}
-
-% ab initio
+ title = "Self-interstitial trapping by carbon complexes in
+ crystalline silicon",
+ author = "A. Mattoni and F. Bernardini and L. Colombo",
+ journal = "Phys. Rev. B",
+ volume = "66",
+ number = "19",
+ pages = "195214",
+ numpages = "6",
+ year = "2002",
+ month = nov,
+ doi = "10.1103/PhysRevB.66.195214",
+ publisher = "American Physical Society",
+ notes = "c in c-si, diffusion, interstitial configuration +
+ links, interaction of carbon and silicon interstitials,
+ tersoff suitability",
+}
@Article{leung99,
- title = {Calculations of Silicon Self-Interstitial Defects},
- author = {Leung, W.-K. and Needs, R. J. and Rajagopal, G. and
- Itoh, S. and Ihara, S. },
- journal = {Phys. Rev. Lett.},
- volume = {83},
- number = {12},
- pages = {2351--2354},
- numpages = {3},
- year = {1999},
- month = {Sep},
- doi = {10.1103/PhysRevLett.83.2351},
- publisher = {American Physical Society},
- notes = {nice images of the defects}
-}
-
-@Article{capazd94,
- title = {Identification of the migration path of interstitial carbon
- in silicon},
- author = {R. B. Capazd, A Dal Pino, J. D. Joannopoulos},
- journal = {Phys. Rev. B},
- volume = {50},
- number = {11},
- pages = {7439--7442},
- numpages = {3},
- year = {1994},
- month = {Sep},
- doi = {10.1103/PhysRevB.50.7439},
- publisher = {American Physical Society},
- notes = {carbon interstitial migration path shown, 001 c-si dumbbell}
+ title = "Calculations of Silicon Self-Interstitial Defects",
+ author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
+ Itoh and S. Ihara",
+ journal = "Phys. Rev. Lett.",
+ volume = "83",
+ number = "12",
+ pages = "2351--2354",
+ numpages = "3",
+ year = "1999",
+ month = sep,
+ doi = "10.1103/PhysRevLett.83.2351",
+ publisher = "American Physical Society",
+ notes = "nice images of the defects, si defect overview +
+ refs",
+}
+
+@Article{capaz94,
+ title = "Identification of the migration path of interstitial
+ carbon in silicon",
+ author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
+ journal = "Phys. Rev. B",
+ volume = "50",
+ number = "11",
+ pages = "7439--7442",
+ numpages = "3",
+ year = "1994",
+ month = sep,
+ doi = "10.1103/PhysRevB.50.7439",
+ publisher = "American Physical Society",
+ notes = "carbon interstitial migration path shown, 001 c-si
+ dumbbell",
+}
+
+@Article{capaz98,
+ title = "Theory of carbon-carbon pairs in silicon",
+ author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
+ journal = "Phys. Rev. B",
+ volume = "58",
+ number = "15",
+ pages = "9845--9850",
+ numpages = "5",
+ year = "1998",
+ month = oct,
+ doi = "10.1103/PhysRevB.58.9845",
+ publisher = "American Physical Society",
+ notes = "c_i c_s pair configuration, theoretical results",
+}
+
+@Article{song90_2,
+ title = "Bistable interstitial-carbon--substitutional-carbon
+ pair in silicon",
+ author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
+ Watkins",
+ journal = "Phys. Rev. B",
+ volume = "42",
+ number = "9",
+ pages = "5765--5783",
+ numpages = "18",
+ year = "1990",
+ month = sep,
+ doi = "10.1103/PhysRevB.42.5765",
+ publisher = "American Physical Society",
+ notes = "c_i c_s pair configuration, experimental results",
+}
+
+@Article{liu02,
+ author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
+ Shifeng Lu and Xiang-Yang Liu",
+ collaboration = "",
+ title = "Ab initio modeling and experimental study of {C}--{B}
+ interactions in Si",
+ publisher = "AIP",
+ year = "2002",
+ journal = "Appl. Phys. Lett.",
+ volume = "80",
+ number = "1",
+ pages = "52--54",
+ keywords = "silicon; boron; carbon; elemental semiconductors;
+ impurity-defect interactions; ab initio calculations;
+ secondary ion mass spectra; diffusion; interstitials",
+ URL = "http://link.aip.org/link/?APL/80/52/1",
+ doi = "10.1063/1.1430505",
+ notes = "c-c 100 split, lower as a and b states of capaz",
+}
+
+@Article{dal_pino93,
+ title = "Ab initio investigation of carbon-related defects in
+ silicon",
+ author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
+ Joannopoulos",
+ journal = "Phys. Rev. B",
+ volume = "47",
+ number = "19",
+ pages = "12554--12557",
+ numpages = "3",
+ year = "1993",
+ month = may,
+ doi = "10.1103/PhysRevB.47.12554",
+ publisher = "American Physical Society",
+ notes = "c interstitials in crystalline silicon",
}
@Article{car84,
- title = {Microscopic Theory of Atomic Diffusion Mechanisms in Silicon},
- author = {Car, Roberto and Kelly, Paul J. and Oshiyama, Atsushi
- and Pantelides, Sokrates T.},
- journal = {Phys. Rev. Lett.},
- volume = {52},
- number = {20},
- pages = {1814--1817},
- numpages = {3},
- year = {1984},
- month = {May},
- doi = {10.1103/PhysRevLett.52.1814},
- publisher = {American Physical Society},
- notes = {microscopic theory diffusion silicon dft migration path formation}
-}
-
-% monte carlo md
+ title = "Microscopic Theory of Atomic Diffusion Mechanisms in
+ Silicon",
+ author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
+ Sokrates T. Pantelides",
+ journal = "Phys. Rev. Lett.",
+ volume = "52",
+ number = "20",
+ pages = "1814--1817",
+ numpages = "3",
+ year = "1984",
+ month = may,
+ doi = "10.1103/PhysRevLett.52.1814",
+ publisher = "American Physical Society",
+ notes = "microscopic theory diffusion silicon dft migration
+ path formation",
+}
+
+@Article{car85,
+ title = "Unified Approach for Molecular Dynamics and
+ Density-Functional Theory",
+ author = "R. Car and M. Parrinello",
+ journal = "Phys. Rev. Lett.",
+ volume = "55",
+ number = "22",
+ pages = "2471--2474",
+ numpages = "3",
+ year = "1985",
+ month = nov,
+ doi = "10.1103/PhysRevLett.55.2471",
+ publisher = "American Physical Society",
+ notes = "car parrinello method, dft and md",
+}
@Article{kelires97,
- title = {Short-range order, bulk moduli,
- and physical trends in c-$Si1-x$$Cx$ alloys },
- author = {Kelires, P. C. },
- journal = {Phys. Rev. B},
- volume = {55},
- number = {14},
- pages = {8784--8787},
- numpages = {3},
- year = {1997},
- month = {Apr},
- doi = {10.1103/PhysRevB.55.8784},
- publisher = {American Physical Society},
- notes = {c strained si, montecarlo md, bulk moduli, next neighbour dist}
+ title = "Short-range order, bulk moduli, and physical trends in
+ c-$Si1-x$$Cx$ alloys",
+ author = "P. C. Kelires",
+ journal = "Phys. Rev. B",
+ volume = "55",
+ number = "14",
+ pages = "8784--8787",
+ numpages = "3",
+ year = "1997",
+ month = apr,
+ doi = "10.1103/PhysRevB.55.8784",
+ publisher = "American Physical Society",
+ notes = "c strained si, montecarlo md, bulk moduli, next
+ neighbour dist",
}
@Article{kelires95,
- title = {Monte Carlo Studies of Ternary Semiconductor Alloys:
- Application to the $Si1-x-yGexCy$ System},
- author = {Kelires, P. C.},
- journal = {Phys. Rev. Lett.},
- volume = {75},
- number = {6},
- pages = {1114--1117},
- numpages = {3},
- year = {1995},
- month = {Aug},
- doi = {10.1103/PhysRevLett.75.1114},
- publisher = {American Physical Society},
- notes = {mc md, strain compensation in si ge by c insertion}
-}
-
-% experimental stuff - interstitials
+ title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
+ Application to the $Si1-x-yGexCy$ System",
+ author = "P. C. Kelires",
+ journal = "Phys. Rev. Lett.",
+ volume = "75",
+ number = "6",
+ pages = "1114--1117",
+ numpages = "3",
+ year = "1995",
+ month = aug,
+ doi = "10.1103/PhysRevLett.75.1114",
+ publisher = "American Physical Society",
+ notes = "mc md, strain compensation in si ge by c insertion",
+}
+
+@Article{bean70,
+ title = "Low temperature electron irradiation of silicon
+ containing carbon",
+ journal = "Solid State Communications",
+ volume = "8",
+ number = "3",
+ pages = "175--177",
+ year = "1970",
+ note = "",
+ ISSN = "0038-1098",
+ doi = "DOI: 10.1016/0038-1098(70)90074-8",
+ URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
+ author = "A. R. Bean and R. C. Newman",
+}
@Article{watkins76,
- title = {EPR Observation of the Isolated Interstitial Carbon Atom in Silicon},
- author = {G. D. Watkins and K. L. Brower},
- journal = {Phys. Rev. Lett.},
- volume = {36},
- number = {22},
- pages = {1329--1332},
- numpages = {3},
- year = {1976},
- month = {May},
- doi = {10.1103/PhysRevLett.36.1329},
- publisher = {American Physical Society},
- notes = {epr observations of 100 interstitial carbon atom in silicon}
+ title = "{EPR} Observation of the Isolated Interstitial Carbon
+ Atom in Silicon",
+ author = "G. D. Watkins and K. L. Brower",
+ journal = "Phys. Rev. Lett.",
+ volume = "36",
+ number = "22",
+ pages = "1329--1332",
+ numpages = "3",
+ year = "1976",
+ month = may,
+ doi = "10.1103/PhysRevLett.36.1329",
+ publisher = "American Physical Society",
+ notes = "epr observations of 100 interstitial carbon atom in
+ silicon",
}
@Article{song90,
- title = {EPR identification of the single-acceptor state of interstitial carbon in silicon},
- author = {L. W. Song, G. D. Watkins},
- journal = {Phys. Rev. B},
- volume = {42},
- number = {9},
- pages = {5759--5764},
- numpages = {5},
- year = {1990},
- month = {Sep},
- doi = {10.1103/PhysRevB.42.5759},
- publisher = {American Physical Society}
+ title = "{EPR} identification of the single-acceptor state of
+ interstitial carbon in silicon",
+ author = "L. W. Song and G. D. Watkins",
+ journal = "Phys. Rev. B",
+ volume = "42",
+ number = "9",
+ pages = "5759--5764",
+ numpages = "5",
+ year = "1990",
+ month = sep,
+ doi = "10.1103/PhysRevB.42.5759",
+ publisher = "American Physical Society",
+ notes = "carbon diffusion in silicon",
}
-% experimental stuff - strained silicon
+@Article{tipping87,
+ author = "A K Tipping and R C Newman",
+ title = "The diffusion coefficient of interstitial carbon in
+ silicon",
+ journal = "Semicond. Sci. Technol.",
+ volume = "2",
+ number = "5",
+ pages = "315--317",
+ URL = "http://stacks.iop.org/0268-1242/2/315",
+ year = "1987",
+ notes = "diffusion coefficient of carbon interstitials in
+ silicon",
+}
@Article{strane96,
- title = {Carbon incorporation into Si at high concentrations
- by ion implantation and solid phase epitaxy},
- author = {J. W. Strane and S. R. Lee and H. J. Stein and S. T. Picraux and
- J. K. Watanabe and J. W. Mayer},
- journal = {J. Appl. Phys.},
- volume = {79},
- pages = {637},
- year = {1996},
- month = {January},
- doi = {10.1063/1.360806},
- notes = {strained silicon, carbon supersaturation}
-}
-
-@article{laveant2002,
- title = {Epitaxy of carbon-rich silicon with MBE},
- author = {P. Laveant, G. Gerth, P. Werner, U. Gosele},
- journal = {Materials Science and Engineering B},
- volume = {89},
- number = {1-3},
- pages = {241-245},
- keywords = {Growth; Epitaxy; MBE; Carbon; Silicon},
- notes = {low c in si, tensile stress to compensate compressive stress,
- avoid sic precipitation}}
-}
-
-% sic formation mechanism
-
-@article{werner97,
- author = {P. Werner and S. Eichler and G. Mariani and R. K\"{o}gler and W. Skorupa},
- title = {Investigation of C[sub x]Si defects in C implanted silicon by transmission electron microscopy},
- publisher = {AIP},
- year = {1997},
- journal = {Applied Physics Letters},
- volume = {70},
- number = {2},
- pages = {252-254},
- keywords = {silicon; ion implantation; carbon; crystal defects;
- transmission electron microscopy; annealing;
- positron annihilation; secondary ion mass spectroscopy;
- buried layers; precipitation},
- url = {http://link.aip.org/link/?APL/70/252/1},
- doi = {10.1063/1.118381},
- notes = {si-c complexes, agglomerate, sic in si matrix, sic precipitate}
-}
-
-@article{strane94,
- author = {J. W. Strane and H. J. Stein and S. R. Lee and S. T. Picraux and
- J. K. Watanabe and J. W. Mayer},
- collaboration = {},
- title = {Precipitation and relaxation in strained
- Si[sub 1 - y]C[sub y]/Si heterostructures},
- publisher = {AIP},
- year = {1994},
- journal = {Journal of Applied Physics},
- volume = {76},
- number = {6},
- pages = {3656-3668},
- keywords = {SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS},
- url = {http://link.aip.org/link/?JAP/76/3656/1},
- doi = {10.1063/1.357429},
- notes = {strained si-c to 3c-sic, carbon nucleation + refs}
-}
-
-% properties sic
+ title = "Carbon incorporation into Si at high concentrations by
+ ion implantation and solid phase epitaxy",
+ author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
+ Picraux and J. K. Watanabe and J. W. Mayer",
+ journal = "J. Appl. Phys.",
+ volume = "79",
+ pages = "637",
+ year = "1996",
+ month = jan,
+ doi = "10.1063/1.360806",
+ notes = "strained silicon, carbon supersaturation",
+}
+
+@Article{laveant2002,
+ title = "Epitaxy of carbon-rich silicon with {MBE}",
+ journal = "Mater. Sci. Eng., B",
+ volume = "89",
+ number = "1-3",
+ pages = "241--245",
+ year = "2002",
+ ISSN = "0921-5107",
+ doi = "DOI: 10.1016/S0921-5107(01)00794-2",
+ URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
+ author = "P. Lav\'eant and G. Gerth and P. Werner and U.
+ G{\"{o}}sele",
+ notes = "low c in si, tensile stress to compensate compressive
+ stress, avoid sic precipitation",
+}
+
+@Article{werner97,
+ author = "P. Werner and S. Eichler and G. Mariani and R.
+ K{\"{o}}gler and W. Skorupa",
+ title = "Investigation of {C}[sub x]Si defects in {C} implanted
+ silicon by transmission electron microscopy",
+ publisher = "AIP",
+ year = "1997",
+ journal = "Appl. Phys. Lett.",
+ volume = "70",
+ number = "2",
+ pages = "252--254",
+ keywords = "silicon; ion implantation; carbon; crystal defects;
+ transmission electron microscopy; annealing; positron
+ annihilation; secondary ion mass spectroscopy; buried
+ layers; precipitation",
+ URL = "http://link.aip.org/link/?APL/70/252/1",
+ doi = "10.1063/1.118381",
+ notes = "si-c complexes, agglomerate, sic in si matrix, sic
+ precipitate",
+}
+
+@InProceedings{werner96,
+ author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
+ Eichler",
+ booktitle = "Ion Implantation Technology. Proceedings of the 11th
+ International Conference on",
+ title = "{TEM} investigation of {C}-Si defects in carbon
+ implanted silicon",
+ year = "1996",
+ month = jun,
+ volume = "",
+ number = "",
+ pages = "675--678",
+ doi = "10.1109/IIT.1996.586497",
+ ISSN = "",
+ notes = "c-si agglomerates dumbbells",
+}
+
+@Article{werner98,
+ author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
+ D. C. Jacobson",
+ collaboration = "",
+ title = "Carbon diffusion in silicon",
+ publisher = "AIP",
+ year = "1998",
+ journal = "Appl. Phys. Lett.",
+ volume = "73",
+ number = "17",
+ pages = "2465--2467",
+ keywords = "silicon; carbon; elemental semiconductors; diffusion;
+ secondary ion mass spectra; semiconductor epitaxial
+ layers; annealing; impurity-defect interactions;
+ impurity distribution",
+ URL = "http://link.aip.org/link/?APL/73/2465/1",
+ doi = "10.1063/1.122483",
+ notes = "c diffusion in si, kick out mechnism",
+}
+
+@Article{strane94,
+ author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
+ Picraux and J. K. Watanabe and J. W. Mayer",
+ collaboration = "",
+ title = "Precipitation and relaxation in strained Si[sub 1 -
+ y]{C}[sub y]/Si heterostructures",
+ publisher = "AIP",
+ year = "1994",
+ journal = "J. Appl. Phys.",
+ volume = "76",
+ number = "6",
+ pages = "3656--3668",
+ keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
+ URL = "http://link.aip.org/link/?JAP/76/3656/1",
+ doi = "10.1063/1.357429",
+ notes = "strained si-c to 3c-sic, carbon nucleation + refs,
+ precipitation by substitutional carbon, coherent prec,
+ coherent to incoherent transition strain vs interface
+ energy",
+}
+
+@Article{fischer95,
+ author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
+ Osten",
+ collaboration = "",
+ title = "Investigation of the high temperature behavior of
+ strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
+ publisher = "AIP",
+ year = "1995",
+ journal = "J. Appl. Phys.",
+ volume = "77",
+ number = "5",
+ pages = "1934--1937",
+ keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
+ XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
+ PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
+ TEMPERATURE RANGE 04001000 K",
+ URL = "http://link.aip.org/link/?JAP/77/1934/1",
+ doi = "10.1063/1.358826",
+}
@Article{edgar92,
- title = {Prospects for device implementation of wide band gap semiconductors},
- author = {J. H. Edgar},
- journal = {J. Mater. Res.},
- volume = {7},
- pages = {235},
- year = {1992},
- month = {January},
- doi = {10.1557/JMR.1992.0235},
- notes = {properties wide band gap semiconductor, sic polytypes}
-}
-
-% my own publications
-
-@article{zirkelbach2007,
- title = {Monte Carlo simulation study of a selforganisation process
- leading to ordered precipitate structures},
- author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
- journal = {Nucl. Instr. and Meth. B},
- volume = {257},
- number = {1--2},
- pages = {75--79},
- numpages = {5},
- year = {2007},
- month = {Apr},
- doi = {doi:10.1016/j.nimb.2006.12.118},
- publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}
-}
-
-@article{zirkelbach2006,
- title = {Monte-Carlo simulation study of the self-organization of nanometric
- amorphous precipitates in regular arrays during ion irradiation},
- author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
- journal = {Nucl. Instr. and Meth. B},
- volume = {242},
- number = {1--2},
- pages = {679--682},
- numpages = {4},
- year = {2006},
- month = {Jan},
- doi = {doi:10.1016/j.nimb.2005.08.162},
- publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}
-}
-
-@article{zirkelbach2005,
- title = {Modelling of a selforganization process leading to periodic arrays
- of nanometric amorphous precipitates by ion irradiation},
- author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
- journal = {Comp. Mater. Sci.},
- volume = {33},
- number = {1--3},
- pages = {310--316},
- numpages = {7},
- year = {2005},
- month = {Apr},
- doi = {doi:10.1016/j.commatsci.2004.12.016},
- publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}
-}
-
-% the one of my boss
+ title = "Prospects for device implementation of wide band gap
+ semiconductors",
+ author = "J. H. Edgar",
+ journal = "J. Mater. Res.",
+ volume = "7",
+ pages = "235",
+ year = "1992",
+ month = jan,
+ doi = "10.1557/JMR.1992.0235",
+ notes = "properties wide band gap semiconductor, sic
+ polytypes",
+}
+
+@Article{zirkelbach2007,
+ title = "Monte Carlo simulation study of a selforganisation
+ process leading to ordered precipitate structures",
+ author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
+ and B. Stritzker",
+ journal = "Nucl. Instr. and Meth. B",
+ volume = "257",
+ number = "1--2",
+ pages = "75--79",
+ numpages = "5",
+ year = "2007",
+ month = apr,
+ doi = "doi:10.1016/j.nimb.2006.12.118",
+ publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
+ NETHERLANDS",
+}
+
+@Article{zirkelbach2006,
+ title = "Monte-Carlo simulation study of the self-organization
+ of nanometric amorphous precipitates in regular arrays
+ during ion irradiation",
+ author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
+ and B. Stritzker",
+ journal = "Nucl. Instr. and Meth. B",
+ volume = "242",
+ number = "1--2",
+ pages = "679--682",
+ numpages = "4",
+ year = "2006",
+ month = jan,
+ doi = "doi:10.1016/j.nimb.2005.08.162",
+ publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
+ NETHERLANDS",
+}
+
+@Article{zirkelbach2005,
+ title = "Modelling of a selforganization process leading to
+ periodic arrays of nanometric amorphous precipitates by
+ ion irradiation",
+ author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
+ and B. Stritzker",
+ journal = "Comp. Mater. Sci.",
+ volume = "33",
+ number = "1--3",
+ pages = "310--316",
+ numpages = "7",
+ year = "2005",
+ month = apr,
+ doi = "doi:10.1016/j.commatsci.2004.12.016",
+ publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
+ NETHERLANDS",
+}
+
+@Article{zirkelbach09,
+ title = "Molecular dynamics simulation of defect formation and
+ precipitation in heavily carbon doped silicon",
+ journal = "Mater. Sci. Eng., B",
+ volume = "159-160",
+ number = "",
+ pages = "149--152",
+ year = "2009",
+ note = "EMRS 2008 Spring Conference Symposium K: Advanced
+ Silicon Materials Research for Electronic and
+ Photovoltaic Applications",
+ ISSN = "0921-5107",
+ doi = "DOI: 10.1016/j.mseb.2008.10.010",
+ URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39",
+ author = "F. Zirkelbach and J. K. N. Lindner and K. Nordlund and
+ B. Stritzker",
+ keywords = "Silicon",
+ keywords = "Carbon",
+ keywords = "Silicon carbide",
+ keywords = "Nucleation",
+ keywords = "Defect formation",
+ keywords = "Molecular dynamics simulations",
+}
+
+@Article{zirkelbach10a,
+ title = "Defects in carbon implanted silicon calculated by
+ classical potentials and first-principles methods",
+ author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
+ K. N. Lindner and W. G. Schmidt and E. Rauls",
+ journal = "Phys. Rev. B",
+ volume = "82",
+ number = "9",
+ pages = "094110",
+ numpages = "6",
+ year = "2010",
+ month = sep,
+ doi = "10.1103/PhysRevB.82.094110",
+ publisher = "American Physical Society",
+}
+
+@Article{zirkelbach10b,
+ title = "First principles study of defects in carbon implanted
+ silicon",
+ journal = "to be published",
+ volume = "",
+ number = "",
+ pages = "",
+ year = "2010",
+ author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
+ K. N. Lindner and W. G. Schmidt and E. Rauls",
+}
+
+@Article{zirkelbach10c,
+ title = "...",
+ journal = "to be published",
+ volume = "",
+ number = "",
+ pages = "",
+ year = "2010",
+ author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
+ K. N. Lindner and W. G. Schmidt and E. Rauls",
+}
+
+@Article{lindner99,
+ title = "Controlling the density distribution of Si{C}
+ nanocrystals for the ion beam synthesis of buried Si{C}
+ layers in silicon",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
+ volume = "147",
+ number = "1-4",
+ pages = "249--255",
+ year = "1999",
+ note = "",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(98)00598-9",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
+ author = "J. K. N. Lindner and B. Stritzker",
+ notes = "two-step implantation process",
+}
+
+@Article{lindner99_2,
+ title = "Mechanisms in the ion beam synthesis of Si{C} layers
+ in silicon",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
+ volume = "148",
+ number = "1-4",
+ pages = "528--533",
+ year = "1999",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(98)00787-3",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
+ author = "J. K. N. Lindner and B. Stritzker",
+ notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
+}
+
+@Article{lindner01,
+ title = "Ion beam synthesis of buried Si{C} layers in silicon:
+ Basic physical processes",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
+ volume = "178",
+ number = "1-4",
+ pages = "44--54",
+ year = "2001",
+ note = "",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(01)00504-3",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
+ author = "J{\"{o}}rg K. N. Lindner",
+}
@Article{lindner02,
- title = {High-dose carbon implantations into silicon:
- fundamental studies for new technological tricks},
- author = {J. K. N. Lindner},
- journal = {Appl. Phys. A},
- volume = {77},
- pages = {27--38},
- year = {2003},
- doi = {10.1007/s00339-002-2062-8},
- notes = {ibs, burried sic layers}
+ title = "High-dose carbon implantations into silicon:
+ fundamental studies for new technological tricks",
+ author = "J. K. N. Lindner",
+ journal = "Appl. Phys. A",
+ volume = "77",
+ pages = "27--38",
+ year = "2003",
+ doi = "10.1007/s00339-002-2062-8",
+ notes = "ibs, burried sic layers",
+}
+
+@Article{lindner06,
+ title = "On the balance between ion beam induced nanoparticle
+ formation and displacive precipitate resolution in the
+ {C}-Si system",
+ journal = "Mater. Sci. Eng., C",
+ volume = "26",
+ number = "5-7",
+ pages = "857--861",
+ year = "2006",
+ note = "Current Trends in Nanoscience - from Materials to
+ Applications",
+ ISSN = "0928-4931",
+ doi = "DOI: 10.1016/j.msec.2005.09.099",
+ URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
+ author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
+ and B. Stritzker",
+ notes = "c int diffusion barrier",
+}
+
+@Article{ito04,
+ title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
+ application in buffer layer for Ga{N} epitaxial
+ growth",
+ journal = "Applied Surface Science",
+ volume = "238",
+ number = "1-4",
+ pages = "159--164",
+ year = "2004",
+ note = "APHYS'03 Special Issue",
+ ISSN = "0169-4332",
+ doi = "DOI: 10.1016/j.apsusc.2004.05.199",
+ URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
+ author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
+ and S. Nishio and K. Yasuda and Y. Ishigami",
+ notes = "gan on 3c-sic, focus on ibs of 3c-sic",
}
+@Article{yamamoto04,
+ title = "Organometallic vapor phase epitaxial growth of Ga{N}
+ on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
+ implantation into Si(1 1 1) substrate",
+ journal = "Journal of Crystal Growth",
+ volume = "261",
+ number = "2-3",
+ pages = "266--270",
+ year = "2004",
+ note = "Proceedings of the 11th Biennial (US) Workshop on
+ Organometallic Vapor Phase Epitaxy (OMVPE)",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
+ author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
+ Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
+ notes = "gan on 3c-sic",
+}
+
+@Article{liu_l02,
+ title = "Substrates for gallium nitride epitaxy",
+ journal = "Materials Science and Engineering: R: Reports",
+ volume = "37",
+ number = "3",
+ pages = "61--127",
+ year = "2002",
+ note = "",
+ ISSN = "0927-796X",
+ doi = "DOI: 10.1016/S0927-796X(02)00008-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
+ author = "L. Liu and J. H. Edgar",
+ notes = "gan substrates",
+}
+
+@Article{takeuchi91,
+ title = "Growth of single crystalline Ga{N} film on Si
+ substrate using 3{C}-Si{C} as an intermediate layer",
+ journal = "Journal of Crystal Growth",
+ volume = "115",
+ number = "1-4",
+ pages = "634--638",
+ year = "1991",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(91)90817-O",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
+ author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
+ Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
+ notes = "gan on 3c-sic (first time?)",
+}
+
+@Article{alder57,
+ author = "B. J. Alder and T. E. Wainwright",
+ title = "Phase Transition for a Hard Sphere System",
+ publisher = "AIP",
+ year = "1957",
+ journal = "J. Chem. Phys.",
+ volume = "27",
+ number = "5",
+ pages = "1208--1209",
+ URL = "http://link.aip.org/link/?JCP/27/1208/1",
+ doi = "10.1063/1.1743957",
+}
+
+@Article{alder59,
+ author = "B. J. Alder and T. E. Wainwright",
+ title = "Studies in Molecular Dynamics. {I}. General Method",
+ publisher = "AIP",
+ year = "1959",
+ journal = "J. Chem. Phys.",
+ volume = "31",
+ number = "2",
+ pages = "459--466",
+ URL = "http://link.aip.org/link/?JCP/31/459/1",
+ doi = "10.1063/1.1730376",
+}
+
+@Article{tersoff_si1,
+ title = "New empirical model for the structural properties of
+ silicon",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. Lett.",
+ volume = "56",
+ number = "6",
+ pages = "632--635",
+ numpages = "3",
+ year = "1986",
+ month = feb,
+ doi = "10.1103/PhysRevLett.56.632",
+ publisher = "American Physical Society",
+}
+
+@Article{tersoff_si2,
+ title = "New empirical approach for the structure and energy of
+ covalent systems",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. B",
+ volume = "37",
+ number = "12",
+ pages = "6991--7000",
+ numpages = "9",
+ year = "1988",
+ month = apr,
+ doi = "10.1103/PhysRevB.37.6991",
+ publisher = "American Physical Society",
+}
+
+@Article{tersoff_si3,
+ title = "Empirical interatomic potential for silicon with
+ improved elastic properties",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. B",
+ volume = "38",
+ number = "14",
+ pages = "9902--9905",
+ numpages = "3",
+ year = "1988",
+ month = nov,
+ doi = "10.1103/PhysRevB.38.9902",
+ publisher = "American Physical Society",
+}
+
+@Article{tersoff_c,
+ title = "Empirical Interatomic Potential for Carbon, with
+ Applications to Amorphous Carbon",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. Lett.",
+ volume = "61",
+ number = "25",
+ pages = "2879--2882",
+ numpages = "3",
+ year = "1988",
+ month = dec,
+ doi = "10.1103/PhysRevLett.61.2879",
+ publisher = "American Physical Society",
+}
+
+@Article{tersoff_m,
+ title = "Modeling solid-state chemistry: Interatomic potentials
+ for multicomponent systems",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. B",
+ volume = "39",
+ number = "8",
+ pages = "5566--5568",
+ numpages = "2",
+ year = "1989",
+ month = mar,
+ doi = "10.1103/PhysRevB.39.5566",
+ publisher = "American Physical Society",
+}
+
+@Article{tersoff90,
+ title = "Carbon defects and defect reactions in silicon",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. Lett.",
+ volume = "64",
+ number = "15",
+ pages = "1757--1760",
+ numpages = "3",
+ year = "1990",
+ month = apr,
+ doi = "10.1103/PhysRevLett.64.1757",
+ publisher = "American Physical Society",
+}
+
+@Article{fahey89,
+ title = "Point defects and dopant diffusion in silicon",
+ author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
+ journal = "Rev. Mod. Phys.",
+ volume = "61",
+ number = "2",
+ pages = "289--384",
+ numpages = "95",
+ year = "1989",
+ month = apr,
+ doi = "10.1103/RevModPhys.61.289",
+ publisher = "American Physical Society",
+}
+
+@Article{wesch96,
+ title = "Silicon carbide: synthesis and processing",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
+ volume = "116",
+ number = "1-4",
+ pages = "305--321",
+ year = "1996",
+ note = "Radiation Effects in Insulators",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/0168-583X(96)00065-1",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
+ author = "W. Wesch",
+}
+
+@Article{morkoc94,
+ author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
+ Lin and B. Sverdlov and M. Burns",
+ collaboration = "",
+ title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
+ ZnSe-based semiconductor device technologies",
+ publisher = "AIP",
+ year = "1994",
+ journal = "J. Appl. Phys.",
+ volume = "76",
+ number = "3",
+ pages = "1363--1398",
+ keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
+ NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
+ LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
+ FILMS; INDUSTRY",
+ URL = "http://link.aip.org/link/?JAP/76/1363/1",
+ doi = "10.1063/1.358463",
+ notes = "sic intro, properties",
+}
+
+@Article{foo,
+ author = "Noch Unbekannt",
+ title = "How to find references",
+ journal = "Journal of Applied References",
+ year = "2009",
+ volume = "77",
+ pages = "1--23",
+}
+
+@Article{tang95,
+ title = "Atomistic simulation of thermomechanical properties of
+ \beta{}-Si{C}",
+ author = "Meijie Tang and Sidney Yip",
+ journal = "Phys. Rev. B",
+ volume = "52",
+ number = "21",
+ pages = "15150--15159",
+ numpages = "9",
+ year = "1995",
+ doi = "10.1103/PhysRevB.52.15150",
+ notes = "modified tersoff, scale cutoff with volume, promising
+ tersoff reparametrization",
+ publisher = "American Physical Society",
+}
+
+@Article{sarro00,
+ title = "Silicon carbide as a new {MEMS} technology",
+ journal = "Sensors and Actuators A: Physical",
+ volume = "82",
+ number = "1-3",
+ pages = "210--218",
+ year = "2000",
+ ISSN = "0924-4247",
+ doi = "DOI: 10.1016/S0924-4247(99)00335-0",
+ URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
+ author = "Pasqualina M. Sarro",
+ keywords = "MEMS",
+ keywords = "Silicon carbide",
+ keywords = "Micromachining",
+ keywords = "Mechanical stress",
+}
+
+@Article{casady96,
+ title = "Status of silicon carbide (Si{C}) as a wide-bandgap
+ semiconductor for high-temperature applications: {A}
+ review",
+ journal = "Solid-State Electronics",
+ volume = "39",
+ number = "10",
+ pages = "1409--1422",
+ year = "1996",
+ ISSN = "0038-1101",
+ doi = "DOI: 10.1016/0038-1101(96)00045-7",
+ URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
+ author = "J. B. Casady and R. W. Johnson",
+ notes = "sic intro",
+}
+
+@Article{giancarli98,
+ title = "Design requirements for Si{C}/Si{C} composites
+ structural material in fusion power reactor blankets",
+ journal = "Fusion Engineering and Design",
+ volume = "41",
+ number = "1-4",
+ pages = "165--171",
+ year = "1998",
+ ISSN = "0920-3796",
+ doi = "DOI: 10.1016/S0920-3796(97)00200-7",
+ URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
+ author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
+ Marois and N. B. Morley and J. F. Salavy",
+}
+
+@Article{pensl93,
+ title = "Electrical and optical characterization of Si{C}",
+ journal = "Physica B: Condensed Matter",
+ volume = "185",
+ number = "1-4",
+ pages = "264--283",
+ year = "1993",
+ ISSN = "0921-4526",
+ doi = "DOI: 10.1016/0921-4526(93)90249-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
+ author = "G. Pensl and W. J. Choyke",
+}
+
+@Article{tairov78,
+ title = "Investigation of growth processes of ingots of silicon
+ carbide single crystals",
+ journal = "J. Cryst. Growth",
+ volume = "43",
+ number = "2",
+ pages = "209--212",
+ year = "1978",
+ notes = "modified lely process",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(78)90169-0",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
+ author = "Yu. M. Tairov and V. F. Tsvetkov",
+}
+
+@Article{tairov81,
+ title = "General principles of growing large-size single
+ crystals of various silicon carbide polytypes",
+ journal = "Journal of Crystal Growth",
+ volume = "52",
+ number = "Part 1",
+ pages = "146--150",
+ year = "1981",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(81)90184-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
+ author = "Yu.M. Tairov and V. F. Tsvetkov",
+}
+
+@Article{barrett91,
+ title = "Si{C} boule growth by sublimation vapor transport",
+ journal = "Journal of Crystal Growth",
+ volume = "109",
+ number = "1-4",
+ pages = "17--23",
+ year = "1991",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(91)90152-U",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
+ author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
+ R. H. Hopkins and W. J. Choyke",
+}
+
+@Article{barrett93,
+ title = "Growth of large Si{C} single crystals",
+ journal = "Journal of Crystal Growth",
+ volume = "128",
+ number = "1-4",
+ pages = "358--362",
+ year = "1993",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(93)90348-Z",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
+ author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
+ R. H. Hopkins and P. G. McMullin and R. C. Clarke and
+ W. J. Choyke",
+}
+
+@Article{stein93,
+ title = "Control of polytype formation by surface energy
+ effects during the growth of Si{C} monocrystals by the
+ sublimation method",
+ journal = "Journal of Crystal Growth",
+ volume = "131",
+ number = "1-2",
+ pages = "71--74",
+ year = "1993",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(93)90397-F",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
+ author = "R. A. Stein and P. Lanig",
+ notes = "6h and 4h, sublimation technique",
+}
+
+@Article{nishino83,
+ author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
+ Will",
+ collaboration = "",
+ title = "Production of large-area single-crystal wafers of
+ cubic Si{C} for semiconductor devices",
+ publisher = "AIP",
+ year = "1983",
+ journal = "Appl. Phys. Lett.",
+ volume = "42",
+ number = "5",
+ pages = "460--462",
+ keywords = "silicon carbides; layers; chemical vapor deposition;
+ monocrystals",
+ URL = "http://link.aip.org/link/?APL/42/460/1",
+ doi = "10.1063/1.93970",
+ notes = "cvd of 3c-sic on si, sic buffer layer",
+}
+
+@Article{nishino87,
+ author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
+ and Hiroyuki Matsunami",
+ collaboration = "",
+ title = "Epitaxial growth and electric characteristics of cubic
+ Si{C} on silicon",
+ publisher = "AIP",
+ year = "1987",
+ journal = "J. Appl. Phys.",
+ volume = "61",
+ number = "10",
+ pages = "4889--4893",
+ URL = "http://link.aip.org/link/?JAP/61/4889/1",
+ doi = "10.1063/1.338355",
+ notes = "cvd of 3c-sic on si, sic buffer layer, first time
+ carbonization",
+}
+
+@Article{powell87,
+ author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
+ Kuczmarski",
+ title = "Growth and Characterization of Cubic Si{C}
+ Single-Crystal Films on Si",
+ publisher = "ECS",
+ year = "1987",
+ journal = "Journal of The Electrochemical Society",
+ volume = "134",
+ number = "6",
+ pages = "1558--1565",
+ keywords = "semiconductor materials; silicon compounds; carbon
+ compounds; crystal morphology; electron mobility",
+ URL = "http://link.aip.org/link/?JES/134/1558/1",
+ doi = "10.1149/1.2100708",
+ notes = "blue light emitting diodes (led)",
+}
+
+@Article{kimoto93,
+ author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
+ and Hiroyuki Matsunami",
+ title = "Growth mechanism of 6{H}-Si{C} in step-controlled
+ epitaxy",
+ publisher = "AIP",
+ year = "1993",
+ journal = "J. Appl. Phys.",
+ volume = "73",
+ number = "2",
+ pages = "726--732",
+ keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
+ RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
+ VAPOR DEPOSITION",
+ URL = "http://link.aip.org/link/?JAP/73/726/1",
+ doi = "10.1063/1.353329",
+ notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
+}
+
+@Article{powell90,
+ author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
+ J. Choyke and J. L. Bradshaw and L. Henderson and M.
+ Yoganathan and J. Yang and P. Pirouz",
+ collaboration = "",
+ title = "Growth of improved quality 3{C}-Si{C} films on
+ 6{H}-Si{C} substrates",
+ publisher = "AIP",
+ year = "1990",
+ journal = "Appl. Phys. Lett.",
+ volume = "56",
+ number = "14",
+ pages = "1353--1355",
+ keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
+ PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
+ MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
+ PHASE EPITAXY",
+ URL = "http://link.aip.org/link/?APL/56/1353/1",
+ doi = "10.1063/1.102512",
+ notes = "cvd of 3c-sic on 6h-sic",
+}
+
+@Article{yuan95,
+ author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
+ Thokala and M. J. Loboda",
+ collaboration = "",
+ title = "Reduced temperature growth of crystalline 3{C}-Si{C}
+ films on 6{H}-Si{C} by chemical vapor deposition from
+ silacyclobutane",
+ publisher = "AIP",
+ year = "1995",
+ journal = "J. Appl. Phys.",
+ volume = "78",
+ number = "2",
+ pages = "1271--1273",
+ keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
+ EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
+ SPECTROPHOTOMETRY",
+ URL = "http://link.aip.org/link/?JAP/78/1271/1",
+ doi = "10.1063/1.360368",
+ notes = "3c-sic on 6h-sic, cvd, reduced temperature",
+}
+
+@Article{fissel95,
+ title = "Epitaxial growth of Si{C} thin films on Si-stabilized
+ [alpha]-Si{C}(0001) at low temperatures by solid-source
+ molecular beam epitaxy",
+ journal = "J. Cryst. Growth",
+ volume = "154",
+ number = "1-2",
+ pages = "72--80",
+ year = "1995",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(95)00170-0",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
+ author = "A. Fissel and U. Kaiser and E. Ducke and B.
+ Schr{\"{o}}ter and W. Richter",
+ notes = "solid source mbe of 3c-sic on si and 6h-sic",
+}
+
+@Article{fissel95_apl,
+ author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
+ collaboration = "",
+ title = "Low-temperature growth of Si{C} thin films on Si and
+ 6{H}--Si{C} by solid-source molecular beam epitaxy",
+ publisher = "AIP",
+ year = "1995",
+ journal = "Appl. Phys. Lett.",
+ volume = "66",
+ number = "23",
+ pages = "3182--3184",
+ keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
+ RHEED; NUCLEATION",
+ URL = "http://link.aip.org/link/?APL/66/3182/1",
+ doi = "10.1063/1.113716",
+ notes = "mbe 3c-sic on si and 6h-sic",
+}
+
+@Article{borders71,
+ author = "J. A. Borders and S. T. Picraux and W. Beezhold",
+ collaboration = "",
+ title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
+ {IMPLANTATION}",
+ publisher = "AIP",
+ year = "1971",
+ journal = "Appl. Phys. Lett.",
+ volume = "18",
+ number = "11",
+ pages = "509--511",
+ URL = "http://link.aip.org/link/?APL/18/509/1",
+ doi = "10.1063/1.1653516",
+ notes = "first time sic by ibs, follow cites for precipitation
+ ideas",
+}
+
+@Article{reeson87,
+ author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
+ J. Davis and G. E. Celler",
+ collaboration = "",
+ title = "Formation of buried layers of beta-Si{C} using ion
+ beam synthesis and incoherent lamp annealing",
+ publisher = "AIP",
+ year = "1987",
+ journal = "Appl. Phys. Lett.",
+ volume = "51",
+ number = "26",
+ pages = "2242--2244",
+ keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
+ IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
+ URL = "http://link.aip.org/link/?APL/51/2242/1",
+ doi = "10.1063/1.98953",
+ notes = "nice tem images, sic by ibs",
+}
+@Article{scace59,
+ author = "R. I. Scace and G. A. Slack",
+ collaboration = "",
+ title = "Solubility of Carbon in Silicon and Germanium",
+ publisher = "AIP",
+ year = "1959",
+ journal = "J. Chem. Phys.",
+ volume = "30",
+ number = "6",
+ pages = "1551--1555",
+ URL = "http://link.aip.org/link/?JCP/30/1551/1",
+ doi = "10.1063/1.1730236",
+ notes = "solubility of c in c-si, si-c phase diagram",
+}
+
+@Article{cowern96,
+ author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
+ F. W. Saris and W. Vandervorst",
+ collaboration = "",
+ title = "Role of {C} and {B} clusters in transient diffusion of
+ {B} in silicon",
+ publisher = "AIP",
+ year = "1996",
+ journal = "Appl. Phys. Lett.",
+ volume = "68",
+ number = "8",
+ pages = "1150--1152",
+ keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
+ DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
+ SILICON",
+ URL = "http://link.aip.org/link/?APL/68/1150/1",
+ doi = "10.1063/1.115706",
+ notes = "suppression of transient enhanced diffusion (ted)",
+}
+
+@Article{stolk95,
+ title = "Implantation and transient boron diffusion: the role
+ of the silicon self-interstitial",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
+ volume = "96",
+ number = "1-2",
+ pages = "187--195",
+ year = "1995",
+ note = "Selected Papers of the Tenth International Conference
+ on Ion Implantation Technology (IIT '94)",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/0168-583X(94)00481-1",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
+ author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
+ and J. M. Poate",
+}
+
+@Article{stolk97,
+ author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
+ D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
+ M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
+ E. Haynes",
+ collaboration = "",
+ title = "Physical mechanisms of transient enhanced dopant
+ diffusion in ion-implanted silicon",
+ publisher = "AIP",
+ year = "1997",
+ journal = "J. Appl. Phys.",
+ volume = "81",
+ number = "9",
+ pages = "6031--6050",
+ URL = "http://link.aip.org/link/?JAP/81/6031/1",
+ doi = "10.1063/1.364452",
+ notes = "ted, transient enhanced diffusion, c silicon trap",
+}
+
+@Article{powell94,
+ author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
+ collaboration = "",
+ title = "Formation of beta-Si{C} nanocrystals by the relaxation
+ of Si[sub 1 - y]{C}[sub y] random alloy layers",
+ publisher = "AIP",
+ year = "1994",
+ journal = "Appl. Phys. Lett.",
+ volume = "64",
+ number = "3",
+ pages = "324--326",
+ keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
+ EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
+ TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
+ SYNTHESIS",
+ URL = "http://link.aip.org/link/?APL/64/324/1",
+ doi = "10.1063/1.111195",
+ notes = "beta sic nano crystals in si, mbe, annealing",
+}
+
+@Article{soref91,
+ author = "Richard A. Soref",
+ collaboration = "",
+ title = "Optical band gap of the ternary semiconductor Si[sub 1
+ - x - y]Ge[sub x]{C}[sub y]",
+ publisher = "AIP",
+ year = "1991",
+ journal = "J. Appl. Phys.",
+ volume = "70",
+ number = "4",
+ pages = "2470--2472",
+ keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
+ OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
+ TERNARY ALLOYS",
+ URL = "http://link.aip.org/link/?JAP/70/2470/1",
+ doi = "10.1063/1.349403",
+ notes = "band gap of strained si by c",
+}
+
+@Article{kasper91,
+ author = "E Kasper",
+ title = "Superlattices of group {IV} elements, a new
+ possibility to produce direct band gap material",
+ journal = "Physica Scripta",
+ volume = "T35",
+ pages = "232--236",
+ URL = "http://stacks.iop.org/1402-4896/T35/232",
+ year = "1991",
+ notes = "superlattices, convert indirect band gap into a
+ quasi-direct one",
+}
+
+@Article{osten99,
+ author = "H. J. Osten and J. Griesche and S. Scalese",
+ collaboration = "",
+ title = "Substitutional carbon incorporation in epitaxial
+ Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
+ molecular beam epitaxy",
+ publisher = "AIP",
+ year = "1999",
+ journal = "Appl. Phys. Lett.",
+ volume = "74",
+ number = "6",
+ pages = "836--838",
+ keywords = "molecular beam epitaxial growth; semiconductor growth;
+ wide band gap semiconductors; interstitials; silicon
+ compounds",
+ URL = "http://link.aip.org/link/?APL/74/836/1",
+ doi = "10.1063/1.123384",
+ notes = "substitutional c in si",
+}
+
+@Article{hohenberg64,
+ title = "Inhomogeneous Electron Gas",
+ author = "P. Hohenberg and W. Kohn",
+ journal = "Phys. Rev.",
+ volume = "136",
+ number = "3B",
+ pages = "B864--B871",
+ numpages = "7",
+ year = "1964",
+ month = nov,
+ doi = "10.1103/PhysRev.136.B864",
+ publisher = "American Physical Society",
+ notes = "density functional theory, dft",
+}
+
+@Article{kohn65,
+ title = "Self-Consistent Equations Including Exchange and
+ Correlation Effects",
+ author = "W. Kohn and L. J. Sham",
+ journal = "Phys. Rev.",
+ volume = "140",
+ number = "4A",
+ pages = "A1133--A1138",
+ numpages = "5",
+ year = "1965",
+ month = nov,
+ doi = "10.1103/PhysRev.140.A1133",
+ publisher = "American Physical Society",
+ notes = "dft, exchange and correlation",
+}
+
+@Article{ruecker94,
+ title = "Strain-stabilized highly concentrated pseudomorphic
+ $Si1-x$$Cx$ layers in Si",
+ author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
+ J. Osten",
+ journal = "Phys. Rev. Lett.",
+ volume = "72",
+ number = "22",
+ pages = "3578--3581",
+ numpages = "3",
+ year = "1994",
+ month = may,
+ doi = "10.1103/PhysRevLett.72.3578",
+ publisher = "American Physical Society",
+ notes = "high c concentration in si, heterostructure, strained
+ si, dft",
+}
+
+@Article{chang05,
+ title = "Electron Transport Model for Strained Silicon-Carbon
+ Alloy",
+ author = "Shu-Tong Chang and Chung-Yi Lin",
+ journal = "Japanese J. Appl. Phys.",
+ volume = "44",
+ number = "4B",
+ pages = "2257--2262",
+ numpages = "5",
+ year = "2005",
+ URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
+ doi = "10.1143/JJAP.44.2257",
+ publisher = "The Japan Society of Applied Physics",
+ notes = "enhance of electron mobility in starined si",
+}
+
+@Article{osten97,
+ author = "H. J. Osten and P. Gaworzewski",
+ collaboration = "",
+ title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
+ and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
+ Si(001)",
+ publisher = "AIP",
+ year = "1997",
+ journal = "J. Appl. Phys.",
+ volume = "82",
+ number = "10",
+ pages = "4977--4981",
+ keywords = "silicon compounds; Ge-Si alloys; wide band gap
+ semiconductors; semiconductor epitaxial layers; carrier
+ density; Hall mobility; interstitials; defect states",
+ URL = "http://link.aip.org/link/?JAP/82/4977/1",
+ doi = "10.1063/1.366364",
+ notes = "charge transport in strained si",
+}
+
+@Article{kapur04,
+ title = "Carbon-mediated aggregation of self-interstitials in
+ silicon: {A} large-scale molecular dynamics study",
+ author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
+ journal = "Phys. Rev. B",
+ volume = "69",
+ number = "15",
+ pages = "155214",
+ numpages = "8",
+ year = "2004",
+ month = apr,
+ doi = "10.1103/PhysRevB.69.155214",
+ publisher = "American Physical Society",
+ notes = "simulation using promising tersoff reparametrization",
+}
+
+@Article{barkema96,
+ title = "Event-Based Relaxation of Continuous Disordered
+ Systems",
+ author = "G. T. Barkema and Normand Mousseau",
+ journal = "Phys. Rev. Lett.",
+ volume = "77",
+ number = "21",
+ pages = "4358--4361",
+ numpages = "3",
+ year = "1996",
+ month = nov,
+ doi = "10.1103/PhysRevLett.77.4358",
+ publisher = "American Physical Society",
+ notes = "activation relaxation technique, art, speed up slow
+ dynamic mds",
+}
+
+@Article{cances09,
+ author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
+ Minoukadeh and F. Willaime",
+ collaboration = "",
+ title = "Some improvements of the activation-relaxation
+ technique method for finding transition pathways on
+ potential energy surfaces",
+ publisher = "AIP",
+ year = "2009",
+ journal = "J. Chem. Phys.",
+ volume = "130",
+ number = "11",
+ eid = "114711",
+ numpages = "6",
+ pages = "114711",
+ keywords = "eigenvalues and eigenfunctions; iron; potential energy
+ surfaces; vacancies (crystal)",
+ URL = "http://link.aip.org/link/?JCP/130/114711/1",
+ doi = "10.1063/1.3088532",
+ notes = "improvements to art, refs for methods to find
+ transition pathways",
+}
+
+@Article{parrinello81,
+ author = "M. Parrinello and A. Rahman",
+ collaboration = "",
+ title = "Polymorphic transitions in single crystals: {A} new
+ molecular dynamics method",
+ publisher = "AIP",
+ year = "1981",
+ journal = "J. Appl. Phys.",
+ volume = "52",
+ number = "12",
+ pages = "7182--7190",
+ keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
+ MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
+ CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
+ COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
+ EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
+ IMPACT SHOCK",
+ URL = "http://link.aip.org/link/?JAP/52/7182/1",
+ doi = "10.1063/1.328693",
+}
+
+@Article{stillinger85,
+ title = "Computer simulation of local order in condensed phases
+ of silicon",
+ author = "Frank H. Stillinger and Thomas A. Weber",
+ journal = "Phys. Rev. B",
+ volume = "31",
+ number = "8",
+ pages = "5262--5271",
+ numpages = "9",
+ year = "1985",
+ month = apr,
+ doi = "10.1103/PhysRevB.31.5262",
+ publisher = "American Physical Society",
+}
+
+@Article{brenner90,
+ title = "Empirical potential for hydrocarbons for use in
+ simulating the chemical vapor deposition of diamond
+ films",
+ author = "Donald W. Brenner",
+ journal = "Phys. Rev. B",
+ volume = "42",
+ number = "15",
+ pages = "9458--9471",
+ numpages = "13",
+ year = "1990",
+ month = nov,
+ doi = "10.1103/PhysRevB.42.9458",
+ publisher = "American Physical Society",
+ notes = "brenner hydro carbons",
+}
+
+@Article{bazant96,
+ title = "Modeling of Covalent Bonding in Solids by Inversion of
+ Cohesive Energy Curves",
+ author = "Martin Z. Bazant and Efthimios Kaxiras",
+ journal = "Phys. Rev. Lett.",
+ volume = "77",
+ number = "21",
+ pages = "4370--4373",
+ numpages = "3",
+ year = "1996",
+ month = nov,
+ doi = "10.1103/PhysRevLett.77.4370",
+ publisher = "American Physical Society",
+ notes = "first si edip",
+}
+
+@Article{bazant97,
+ title = "Environment-dependent interatomic potential for bulk
+ silicon",
+ author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
+ Justo",
+ journal = "Phys. Rev. B",
+ volume = "56",
+ number = "14",
+ pages = "8542--8552",
+ numpages = "10",
+ year = "1997",
+ month = oct,
+ doi = "10.1103/PhysRevB.56.8542",
+ publisher = "American Physical Society",
+ notes = "second si edip",
+}
+
+@Article{justo98,
+ title = "Interatomic potential for silicon defects and
+ disordered phases",
+ author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
+ Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
+ journal = "Phys. Rev. B",
+ volume = "58",
+ number = "5",
+ pages = "2539--2550",
+ numpages = "11",
+ year = "1998",
+ month = aug,
+ doi = "10.1103/PhysRevB.58.2539",
+ publisher = "American Physical Society",
+ notes = "latest si edip, good dislocation explanation",
+}
+
+@Article{parcas_md,
+ title = "{PARCAS} molecular dynamics code",
+ author = "K. Nordlund",
+ year = "2008",
+}
+
+@Article{voter97,
+ title = "Hyperdynamics: Accelerated Molecular Dynamics of
+ Infrequent Events",
+ author = "Arthur F. Voter",
+ journal = "Phys. Rev. Lett.",
+ volume = "78",
+ number = "20",
+ pages = "3908--3911",
+ numpages = "3",
+ year = "1997",
+ month = may,
+ doi = "10.1103/PhysRevLett.78.3908",
+ publisher = "American Physical Society",
+ notes = "hyperdynamics, accelerated md",
+}
+
+@Article{voter97_2,
+ author = "Arthur F. Voter",
+ collaboration = "",
+ title = "A method for accelerating the molecular dynamics
+ simulation of infrequent events",
+ publisher = "AIP",
+ year = "1997",
+ journal = "J. Chem. Phys.",
+ volume = "106",
+ number = "11",
+ pages = "4665--4677",
+ keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
+ TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
+ SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
+ energy functions; surface diffusion; reaction kinetics
+ theory; potential energy surfaces",
+ URL = "http://link.aip.org/link/?JCP/106/4665/1",
+ doi = "10.1063/1.473503",
+ notes = "improved hyperdynamics md",
+}
+
+@Article{sorensen2000,
+ author = "Mads R. S{\o }rensen and Arthur F. Voter",
+ collaboration = "",
+ title = "Temperature-accelerated dynamics for simulation of
+ infrequent events",
+ publisher = "AIP",
+ year = "2000",
+ journal = "J. Chem. Phys.",
+ volume = "112",
+ number = "21",
+ pages = "9599--9606",
+ keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
+ MOLECULAR DYNAMICS METHOD; surface diffusion",
+ URL = "http://link.aip.org/link/?JCP/112/9599/1",
+ doi = "10.1063/1.481576",
+ notes = "temperature accelerated dynamics, tad",
+}
+
+@Article{voter98,
+ title = "Parallel replica method for dynamics of infrequent
+ events",
+ author = "Arthur F. Voter",
+ journal = "Phys. Rev. B",
+ volume = "57",
+ number = "22",
+ pages = "R13985--R13988",
+ numpages = "3",
+ year = "1998",
+ month = jun,
+ doi = "10.1103/PhysRevB.57.R13985",
+ publisher = "American Physical Society",
+ notes = "parallel replica method, accelerated md",
+}
+
+@Article{wu99,
+ author = "Xiongwu Wu and Shaomeng Wang",
+ collaboration = "",
+ title = "Enhancing systematic motion in molecular dynamics
+ simulation",
+ publisher = "AIP",
+ year = "1999",
+ journal = "J. Chem. Phys.",
+ volume = "110",
+ number = "19",
+ pages = "9401--9410",
+ keywords = "molecular dynamics method; argon; Lennard-Jones
+ potential; crystallisation; liquid theory",
+ URL = "http://link.aip.org/link/?JCP/110/9401/1",
+ doi = "10.1063/1.478948",
+ notes = "self guided md, sgmd, accelerated md, enhancing
+ systematic motion",
+}
+
+@Article{choudhary05,
+ author = "Devashish Choudhary and Paulette Clancy",
+ collaboration = "",
+ title = "Application of accelerated molecular dynamics schemes
+ to the production of amorphous silicon",
+ publisher = "AIP",
+ year = "2005",
+ journal = "J. Chem. Phys.",
+ volume = "122",
+ number = "15",
+ eid = "154509",
+ numpages = "8",
+ pages = "154509",
+ keywords = "molecular dynamics method; silicon; glass structure;
+ amorphous semiconductors",
+ URL = "http://link.aip.org/link/?JCP/122/154509/1",
+ doi = "10.1063/1.1878733",
+ notes = "explanation of sgmd and hyper md, applied to amorphous
+ silicon",
+}
+
+@Article{taylor93,
+ author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
+ collaboration = "",
+ title = "Carbon precipitation in silicon: Why is it so
+ difficult?",
+ publisher = "AIP",
+ year = "1993",
+ journal = "Appl. Phys. Lett.",
+ volume = "62",
+ number = "25",
+ pages = "3336--3338",
+ keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
+ MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
+ ENERGY",
+ URL = "http://link.aip.org/link/?APL/62/3336/1",
+ doi = "10.1063/1.109063",
+ notes = "interfacial energy of cubic sic and si",
+}
+
+@Article{chaussende08,
+ title = "Prospects for 3{C}-Si{C} bulk crystal growth",
+ journal = "J. Cryst. Growth",
+ volume = "310",
+ number = "5",
+ pages = "976--981",
+ year = "2008",
+ note = "Proceedings of the E-MRS Conference, Symposium G -
+ Substrates of Wide Bandgap Materials",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
+ author = "D. Chaussende and F. Mercier and A. Boulle and F.
+ Conchon and M. Soueidan and G. Ferro and A. Mantzari
+ and A. Andreadou and E. K. Polychroniadis and C.
+ Balloud and S. Juillaguet and J. Camassel and M. Pons",
+ notes = "3c-sic crystal growth, sic fabrication + links,
+ metastable",
+}
+
+@Article{chaussende07,
+ author = "D. Chaussende and P. J. Wellmann and M. Pons",
+ title = "Status of Si{C} bulk growth processes",
+ journal = "Journal of Physics D: Applied Physics",
+ volume = "40",
+ number = "20",
+ pages = "6150",
+ URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
+ year = "2007",
+ notes = "review of sic single crystal growth methods, process
+ modelling",
+}
+
+@Article{feynman39,
+ title = "Forces in Molecules",
+ author = "R. P. Feynman",
+ journal = "Phys. Rev.",
+ volume = "56",
+ number = "4",
+ pages = "340--343",
+ numpages = "3",
+ year = "1939",
+ month = aug,
+ doi = "10.1103/PhysRev.56.340",
+ publisher = "American Physical Society",
+ notes = "hellmann feynman forces",
+}
+
+@Article{buczko00,
+ title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
+ $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
+ their Contrasting Properties",
+ author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
+ T. Pantelides",
+ journal = "Phys. Rev. Lett.",
+ volume = "84",
+ number = "5",
+ pages = "943--946",
+ numpages = "3",
+ year = "2000",
+ month = jan,
+ doi = "10.1103/PhysRevLett.84.943",
+ publisher = "American Physical Society",
+ notes = "si sio2 and sic sio2 interface",
+}
+
+@Article{djurabekova08,
+ title = "Atomistic simulation of the interface structure of Si
+ nanocrystals embedded in amorphous silica",
+ author = "Flyura Djurabekova and Kai Nordlund",
+ journal = "Phys. Rev. B",
+ volume = "77",
+ number = "11",
+ pages = "115325",
+ numpages = "7",
+ year = "2008",
+ month = mar,
+ doi = "10.1103/PhysRevB.77.115325",
+ publisher = "American Physical Society",
+ notes = "nc-si in sio2, interface energy, nc construction,
+ angular distribution, coordination",
+}
+
+@Article{wen09,
+ author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
+ W. Liang and J. Zou",
+ collaboration = "",
+ title = "Nature of interfacial defects and their roles in
+ strain relaxation at highly lattice mismatched
+ 3{C}-Si{C}/Si (001) interface",
+ publisher = "AIP",
+ year = "2009",
+ journal = "J. Appl. Phys.",
+ volume = "106",
+ number = "7",
+ eid = "073522",
+ numpages = "8",
+ pages = "073522",
+ keywords = "anelastic relaxation; crystal structure; dislocations;
+ elemental semiconductors; semiconductor growth;
+ semiconductor thin films; silicon; silicon compounds;
+ stacking faults; wide band gap semiconductors",
+ URL = "http://link.aip.org/link/?JAP/106/073522/1",
+ doi = "10.1063/1.3234380",
+ notes = "sic/si interface, follow refs, tem image
+ deconvolution, dislocation defects",
+}
+
+@Article{kitabatake93,
+ author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
+ Hirao",
+ collaboration = "",
+ title = "Simulations and experiments of Si{C} heteroepitaxial
+ growth on Si(001) surface",
+ publisher = "AIP",
+ year = "1993",
+ journal = "J. Appl. Phys.",
+ volume = "74",
+ number = "7",
+ pages = "4438--4445",
+ keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
+ BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
+ MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
+ URL = "http://link.aip.org/link/?JAP/74/4438/1",
+ doi = "10.1063/1.354385",
+ notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
+ model, interface",
+}
+
+@Article{chirita97,
+ title = "Strain relaxation and thermal stability of the
+ 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
+ dynamics study",
+ journal = "Thin Solid Films",
+ volume = "294",
+ number = "1-2",
+ pages = "47--49",
+ year = "1997",
+ note = "",
+ ISSN = "0040-6090",
+ doi = "DOI: 10.1016/S0040-6090(96)09257-7",
+ URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
+ author = "V. Chirita and L. Hultman and L. R. Wallenberg",
+ keywords = "Strain relaxation",
+ keywords = "Interfaces",
+ keywords = "Thermal stability",
+ keywords = "Molecular dynamics",
+ notes = "tersoff sic/si interface study",
+}
+
+@Article{cicero02,
+ title = "Ab initio Study of Misfit Dislocations at the
+ $Si{C}/Si(001)$ Interface",
+ author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
+ Catellani",
+ journal = "Phys. Rev. Lett.",
+ volume = "89",
+ number = "15",
+ pages = "156101",
+ numpages = "4",
+ year = "2002",
+ month = sep,
+ doi = "10.1103/PhysRevLett.89.156101",
+ publisher = "American Physical Society",
+ notes = "sic/si interface study",
+}
+
+@Article{pizzagalli03,
+ title = "Theoretical investigations of a highly mismatched
+ interface: Si{C}/Si(001)",
+ author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
+ Catellani",
+ journal = "Phys. Rev. B",
+ volume = "68",
+ number = "19",
+ pages = "195302",
+ numpages = "10",
+ year = "2003",
+ month = nov,
+ doi = "10.1103/PhysRevB.68.195302",
+ publisher = "American Physical Society",
+ notes = "tersoff md and ab initio sic/si interface study",
+}
+
+@Article{tang07,
+ title = "Atomic configurations of dislocation core and twin
+ boundaries in $ 3{C}-Si{C} $ studied by high-resolution
+ electron microscopy",
+ author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
+ H. Zheng and J. W. Liang",
+ journal = "Phys. Rev. B",
+ volume = "75",
+ number = "18",
+ pages = "184103",
+ numpages = "7",
+ year = "2007",
+ month = may,
+ doi = "10.1103/PhysRevB.75.184103",
+ publisher = "American Physical Society",
+ notes = "hrem image deconvolution on 3c-sic on si, distinguish
+ si and c",
+}
+
+@Article{hornstra58,
+ title = "Dislocations in the diamond lattice",
+ journal = "Journal of Physics and Chemistry of Solids",
+ volume = "5",
+ number = "1-2",
+ pages = "129--141",
+ year = "1958",
+ note = "",
+ ISSN = "0022-3697",
+ doi = "DOI: 10.1016/0022-3697(58)90138-0",
+ URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
+ author = "J. Hornstra",
+ notes = "dislocations in diamond lattice",
+}
+
+@Article{deguchi92,
+ title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
+ Ion `Hot' Implantation",
+ author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
+ Hirao and Naoki Arai and Tomio Izumi",
+ journal = "Japanese Journal of Applied Physics",
+ volume = "31",
+ number = "Part 1, No. 2A",
+ pages = "343--347",
+ numpages = "4",
+ year = "1992",
+ URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
+ doi = "10.1143/JJAP.31.343",
+ publisher = "The Japan Society of Applied Physics",
+ notes = "c-c bonds in c implanted si, hot implantation
+ efficiency, c-c hard to break by thermal annealing",
+}
+
+@Article{eichhorn99,
+ author = "F. Eichhorn and N. Schell and W. Matz and R.
+ K{\"{o}}gler",
+ collaboration = "",
+ title = "Strain and Si{C} particle formation in silicon
+ implanted with carbon ions of medium fluence studied by
+ synchrotron x-ray diffraction",
+ publisher = "AIP",
+ year = "1999",
+ journal = "J. Appl. Phys.",
+ volume = "86",
+ number = "8",
+ pages = "4184--4187",
+ keywords = "silicon; carbon; elemental semiconductors; chemical
+ interdiffusion; ion implantation; X-ray diffraction;
+ precipitation; semiconductor doping",
+ URL = "http://link.aip.org/link/?JAP/86/4184/1",
+ doi = "10.1063/1.371344",
+ notes = "sic conversion by ibs, detected substitutional carbon,
+ expansion of si lattice",
+}
+
+@Article{eichhorn02,
+ author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
+ Metzger and W. Matz and R. K{\"{o}}gler",
+ collaboration = "",
+ title = "Structural relation between Si and Si{C} formed by
+ carbon ion implantation",
+ publisher = "AIP",
+ year = "2002",
+ journal = "J. Appl. Phys.",
+ volume = "91",
+ number = "3",
+ pages = "1287--1292",
+ keywords = "silicon compounds; wide band gap semiconductors; ion
+ implantation; annealing; X-ray scattering; transmission
+ electron microscopy",
+ URL = "http://link.aip.org/link/?JAP/91/1287/1",
+ doi = "10.1063/1.1428105",
+ notes = "3c-sic alignement to si host in ibs depending on
+ temperature, might explain c into c sub trafo",
+}
+
+@Article{lucas10,
+ author = "G Lucas and M Bertolus and L Pizzagalli",
+ title = "An environment-dependent interatomic potential for
+ silicon carbide: calculation of bulk properties,
+ high-pressure phases, point and extended defects, and
+ amorphous structures",
+ journal = "J. Phys.: Condens. Matter",
+ volume = "22",
+ number = "3",
+ pages = "035802",
+ URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
+ year = "2010",
+ notes = "edip sic",
+}
+
+@Article{godet03,
+ author = "J Godet and L Pizzagalli and S Brochard and P
+ Beauchamp",
+ title = "Comparison between classical potentials and ab initio
+ methods for silicon under large shear",
+ journal = "J. Phys.: Condens. Matter",
+ volume = "15",
+ number = "41",
+ pages = "6943",
+ URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
+ year = "2003",
+ notes = "comparison of empirical potentials, stillinger weber,
+ edip, tersoff, ab initio",
+}
+
+@Article{moriguchi98,
+ title = "Verification of Tersoff's Potential for Static
+ Structural Analysis of Solids of Group-{IV} Elements",
+ author = "Koji Moriguchi and Akira Shintani",
+ journal = "Japanese J. Appl. Phys.",
+ volume = "37",
+ number = "Part 1, No. 2",
+ pages = "414--422",
+ numpages = "8",
+ year = "1998",
+ URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
+ doi = "10.1143/JJAP.37.414",
+ publisher = "The Japan Society of Applied Physics",
+ notes = "tersoff stringent test",
+}
+
+@Article{mazzarolo01,
+ title = "Low-energy recoils in crystalline silicon: Quantum
+ simulations",
+ author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
+ Lulli and Eros Albertazzi",
+ journal = "Phys. Rev. B",
+ volume = "63",
+ number = "19",
+ pages = "195207",
+ numpages = "4",
+ year = "2001",
+ month = apr,
+ doi = "10.1103/PhysRevB.63.195207",
+ publisher = "American Physical Society",
+}
+
+@Article{holmstroem08,
+ title = "Threshold defect production in silicon determined by
+ density functional theory molecular dynamics
+ simulations",
+ author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
+ journal = "Phys. Rev. B",
+ volume = "78",
+ number = "4",
+ pages = "045202",
+ numpages = "6",
+ year = "2008",
+ month = jul,
+ doi = "10.1103/PhysRevB.78.045202",
+ publisher = "American Physical Society",
+ notes = "threshold displacement comparison empirical and ab
+ initio",
+}
+
+@Article{nordlund97,
+ title = "Repulsive interatomic potentials calculated using
+ Hartree-Fock and density-functional theory methods",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
+ volume = "132",
+ number = "1",
+ pages = "45--54",
+ year = "1997",
+ note = "",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(97)00447-3",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
+ author = "K. Nordlund and N. Runeberg and D. Sundholm",
+ notes = "repulsive ab initio potential",
+}
+
+@Article{kresse96,
+ title = "Efficiency of ab-initio total energy calculations for
+ metals and semiconductors using a plane-wave basis
+ set",
+ journal = "Comput. Mater. Sci.",
+ volume = "6",
+ number = "1",
+ pages = "15--50",
+ year = "1996",
+ note = "",
+ ISSN = "0927-0256",
+ doi = "DOI: 10.1016/0927-0256(96)00008-0",
+ URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
+ author = "G. Kresse and J. Furthm{\"{u}}ller",
+ notes = "vasp ref",
+}
+
+@Article{bloechl94,
+ title = "Projector augmented-wave method",
+ author = "P. E. Bl{\"o}chl",
+ journal = "Phys. Rev. B",
+ volume = "50",
+ number = "24",
+ pages = "17953--17979",
+ numpages = "26",
+ year = "1994",
+ month = dec,
+ doi = "10.1103/PhysRevB.50.17953",
+ publisher = "American Physical Society",
+ notes = "paw method",
+}
+
+@Article{hamann79,
+ title = "Norm-Conserving Pseudopotentials",
+ author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
+ journal = "Phys. Rev. Lett.",
+ volume = "43",
+ number = "20",
+ pages = "1494--1497",
+ numpages = "3",
+ year = "1979",
+ month = nov,
+ doi = "10.1103/PhysRevLett.43.1494",
+ publisher = "American Physical Society",
+ notes = "norm-conserving pseudopotentials",
+}
+
+@Article{vanderbilt90,
+ title = "Soft self-consistent pseudopotentials in a generalized
+ eigenvalue formalism",
+ author = "David Vanderbilt",
+ journal = "Phys. Rev. B",
+ volume = "41",
+ number = "11",
+ pages = "7892--7895",
+ numpages = "3",
+ year = "1990",
+ month = apr,
+ doi = "10.1103/PhysRevB.41.7892",
+ publisher = "American Physical Society",
+ notes = "vasp pseudopotentials",
+}
+
+@Article{perdew86,
+ title = "Accurate and simple density functional for the
+ electronic exchange energy: Generalized gradient
+ approximation",
+ author = "John P. Perdew and Yue Wang",
+ journal = "Phys. Rev. B",
+ volume = "33",
+ number = "12",
+ pages = "8800--8802",
+ numpages = "2",
+ year = "1986",
+ month = jun,
+ doi = "10.1103/PhysRevB.33.8800",
+ publisher = "American Physical Society",
+ notes = "rapid communication gga",
+}
+
+@Article{perdew02,
+ title = "Generalized gradient approximations for exchange and
+ correlation: {A} look backward and forward",
+ journal = "Physica B: Condensed Matter",
+ volume = "172",
+ number = "1-2",
+ pages = "1--6",
+ year = "1991",
+ note = "",
+ ISSN = "0921-4526",
+ doi = "DOI: 10.1016/0921-4526(91)90409-8",
+ URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
+ author = "John P. Perdew",
+ notes = "gga overview",
+}
+
+@Article{perdew92,
+ title = "Atoms, molecules, solids, and surfaces: Applications
+ of the generalized gradient approximation for exchange
+ and correlation",
+ author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
+ Koblar A. Jackson and Mark R. Pederson and D. J. Singh
+ and Carlos Fiolhais",
+ journal = "Phys. Rev. B",
+ volume = "46",
+ number = "11",
+ pages = "6671--6687",
+ numpages = "16",
+ year = "1992",
+ month = sep,
+ doi = "10.1103/PhysRevB.46.6671",
+ publisher = "American Physical Society",
+ notes = "gga pw91 (as in vasp)",
+}
+
+@Article{baldereschi73,
+ title = "Mean-Value Point in the Brillouin Zone",
+ author = "A. Baldereschi",
+ journal = "Phys. Rev. B",
+ volume = "7",
+ number = "12",
+ pages = "5212--5215",
+ numpages = "3",
+ year = "1973",
+ month = jun,
+ doi = "10.1103/PhysRevB.7.5212",
+ publisher = "American Physical Society",
+ notes = "mean value k point",
+}
+
+@Article{zhu98,
+ title = "Ab initio pseudopotential calculations of dopant
+ diffusion in Si",
+ journal = "Comput. Mater. Sci.",
+ volume = "12",
+ number = "4",
+ pages = "309--318",
+ year = "1998",
+ note = "",
+ ISSN = "0927-0256",
+ doi = "DOI: 10.1016/S0927-0256(98)00023-8",
+ URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
+ author = "Jing Zhu",
+ keywords = "TED (transient enhanced diffusion)",
+ keywords = "Boron dopant",
+ keywords = "Carbon dopant",
+ keywords = "Defect",
+ keywords = "ab initio pseudopotential method",
+ keywords = "Impurity cluster",
+ notes = "binding of c to si interstitial, c in si defects",
+}
+
+@Article{nejim95,
+ author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
+ collaboration = "",
+ title = "Si{C} buried layer formation by ion beam synthesis at
+ 950 [degree]{C}",
+ publisher = "AIP",
+ year = "1995",
+ journal = "Appl. Phys. Lett.",
+ volume = "66",
+ number = "20",
+ pages = "2646--2648",
+ keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
+ CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
+ 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
+ ELECTRON MICROSCOPY",
+ URL = "http://link.aip.org/link/?APL/66/2646/1",
+ doi = "10.1063/1.113112",
+ notes = "precipitation mechanism by substitutional carbon, si
+ self interstitials react with further implanted c",
+}
+
+@Article{guedj98,
+ author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
+ Kolodzey and A. Hairie",
+ collaboration = "",
+ title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
+ alloys",
+ publisher = "AIP",
+ year = "1998",
+ journal = "J. Appl. Phys.",
+ volume = "84",
+ number = "8",
+ pages = "4631--4633",
+ keywords = "silicon compounds; precipitation; localised modes;
+ semiconductor epitaxial layers; infrared spectra;
+ Fourier transform spectra; thermal stability;
+ annealing",
+ URL = "http://link.aip.org/link/?JAP/84/4631/1",
+ doi = "10.1063/1.368703",
+ notes = "coherent 3C-SiC, topotactic, critical coherence size",
+}
+
+@Article{jones04,
+ author = "R Jones and B J Coomer and P R Briddon",
+ title = "Quantum mechanical modelling of defects in
+ semiconductors",
+ journal = "J. Phys.: Condens. Matter",
+ volume = "16",
+ number = "27",
+ pages = "S2643",
+ URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
+ year = "2004",
+ notes = "ab inito init, vibrational modes, c defect in si",
+}
+
+@Article{park02,
+ author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
+ T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
+ J. E. Greene and S. G. Bishop",
+ collaboration = "",
+ title = "Carbon incorporation pathways and lattice sites in
+ Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
+ molecular-beam epitaxy",
+ publisher = "AIP",
+ year = "2002",
+ journal = "J. Appl. Phys.",
+ volume = "91",
+ number = "9",
+ pages = "5716--5727",
+ URL = "http://link.aip.org/link/?JAP/91/5716/1",
+ doi = "10.1063/1.1465122",
+ notes = "c substitutional incorporation pathway, dft and expt",
+}
+
+@Article{leary97,
+ title = "Dynamic properties of interstitial carbon and
+ carbon-carbon pair defects in silicon",
+ author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
+ Torres",
+ journal = "Phys. Rev. B",
+ volume = "55",
+ number = "4",
+ pages = "2188--2194",
+ numpages = "6",
+ year = "1997",
+ month = jan,
+ doi = "10.1103/PhysRevB.55.2188",
+ publisher = "American Physical Society",
+ notes = "ab initio c in si and di-carbon defect, no formation
+ energies, different migration barriers and paths",
+}
+
+@Article{burnard93,
+ title = "Interstitial carbon and the carbon-carbon pair in
+ silicon: Semiempirical electronic-structure
+ calculations",
+ author = "Matthew J. Burnard and Gary G. DeLeo",
+ journal = "Phys. Rev. B",
+ volume = "47",
+ number = "16",
+ pages = "10217--10225",
+ numpages = "8",
+ year = "1993",
+ month = apr,
+ doi = "10.1103/PhysRevB.47.10217",
+ publisher = "American Physical Society",
+ notes = "semi empirical mndo, pm3 and mindo3 c in si and di
+ carbon defect, formation energies",
+}
+
+@Article{besson91,
+ title = "Electronic structure of interstitial carbon in
+ silicon",
+ author = "Morgan Besson and Gary G. DeLeo",
+ journal = "Phys. Rev. B",
+ volume = "43",
+ number = "5",
+ pages = "4028--4033",
+ numpages = "5",
+ year = "1991",
+ month = feb,
+ doi = "10.1103/PhysRevB.43.4028",
+ publisher = "American Physical Society",
+}
+
+@Article{kaxiras96,
+ title = "Review of atomistic simulations of surface diffusion
+ and growth on semiconductors",
+ journal = "Comput. Mater. Sci.",
+ volume = "6",
+ number = "2",
+ pages = "158--172",
+ year = "1996",
+ note = "Proceedings of the Workshop on Virtual Molecular Beam
+ Epitaxy",
+ ISSN = "0927-0256",
+ doi = "DOI: 10.1016/0927-0256(96)00030-4",
+ URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
+ author = "Efthimios Kaxiras",
+ notes = "might contain c 100 db formation energy, overview md,
+ tight binding, first principles",
+}
+
+@Article{kaukonen98,
+ title = "Effect of {N} and {B} doping on the growth of {CVD}
+ diamond
+ $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
+ surfaces",
+ author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
+ M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
+ Th. Frauenheim",
+ journal = "Phys. Rev. B",
+ volume = "57",
+ number = "16",
+ pages = "9965--9970",
+ numpages = "5",
+ year = "1998",
+ month = apr,
+ doi = "10.1103/PhysRevB.57.9965",
+ publisher = "American Physical Society",
+ notes = "constrained conjugate gradient relaxation technique
+ (crt)",
+}
+
+@Article{gali03,
+ title = "Correlation between the antisite pair and the ${DI}$
+ center in Si{C}",
+ author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
+ I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
+ W. J. Choyke",
+ journal = "Phys. Rev. B",
+ volume = "67",
+ number = "15",
+ pages = "155203",
+ numpages = "5",
+ year = "2003",
+ month = apr,
+ doi = "10.1103/PhysRevB.67.155203",
+ publisher = "American Physical Society",
+}
+
+@Article{chen98,
+ title = "Production and recovery of defects in Si{C} after
+ irradiation and deformation",
+ journal = "J. Nucl. Mater.",
+ volume = "258-263",
+ number = "Part 2",
+ pages = "1803--1808",
+ year = "1998",
+ note = "",
+ ISSN = "0022-3115",
+ doi = "DOI: 10.1016/S0022-3115(98)00139-1",
+ URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
+ author = "J. Chen and P. Jung and H. Klein",
+}
+
+@Article{weber01,
+ title = "Accumulation, dynamic annealing and thermal recovery
+ of ion-beam-induced disorder in silicon carbide",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
+ volume = "175-177",
+ number = "",
+ pages = "26--30",
+ year = "2001",
+ note = "",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(00)00542-5",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
+ author = "W. J. Weber and W. Jiang and S. Thevuthasan",
+}
+
+@Article{bockstedte03,
+ title = "Ab initio study of the migration of intrinsic defects
+ in $3{C}-Si{C}$",
+ author = "Michel Bockstedte and Alexander Mattausch and Oleg
+ Pankratov",
+ journal = "Phys. Rev. B",
+ volume = "68",
+ number = "20",
+ pages = "205201",
+ numpages = "17",
+ year = "2003",
+ month = nov,
+ doi = "10.1103/PhysRevB.68.205201",
+ publisher = "American Physical Society",
+ notes = "defect migration in sic",
+}
+
+@Article{rauls03a,
+ title = "Theoretical study of vacancy diffusion and
+ vacancy-assisted clustering of antisites in Si{C}",
+ author = "E. Rauls and Th. Frauenheim and A. Gali and P.
+ De\'ak",
+ journal = "Phys. Rev. B",
+ volume = "68",
+ number = "15",
+ pages = "155208",
+ numpages = "9",
+ year = "2003",
+ month = oct,
+ doi = "10.1103/PhysRevB.68.155208",
+ publisher = "American Physical Society",
+}
+
+@Article{losev27,
+ journal = "Telegrafiya i Telefoniya bez Provodov",
+ volume = "44",
+ pages = "485--494",
+ year = "1927",
+ author = "O. V. Lossev",
+}
+
+@Article{losev28,
+ title = "Luminous carborundum detector and detection effect and
+ oscillations with crystals",
+ journal = "Philosophical Magazine Series 7",
+ volume = "6",
+ number = "39",
+ pages = "1024--1044",
+ year = "1928",
+ URL = "http://www.informaworld.com/10.1080/14786441108564683",
+ author = "O. V. Lossev",
+}
+
+@Article{losev29,
+ journal = "Physik. Zeitschr.",
+ volume = "30",
+ pages = "920--923",
+ year = "1929",
+ author = "O. V. Lossev",
+}
+
+@Article{losev31,
+ journal = "Physik. Zeitschr.",
+ volume = "32",
+ pages = "692--696",
+ year = "1931",
+ author = "O. V. Lossev",
+}
+
+@Article{losev33,
+ journal = "Physik. Zeitschr.",
+ volume = "34",
+ pages = "397--403",
+ year = "1933",
+ author = "O. V. Lossev",
+}
+
+@Article{round07,
+ title = "A note on carborundum",
+ journal = "Electrical World",
+ volume = "49",
+ pages = "308",
+ year = "1907",
+ author = "H. J. Round",
+}
+
+@Article{vashishath08,
+ title = "Recent trends in silicon carbide device research",
+ journal = "Mj. Int. J. Sci. Tech.",
+ volume = "2",
+ number = "03",
+ pages = "444--470",
+ year = "2008",
+ author = "Munish Vashishath and Ashoke K. Chatterjee",
+ URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
+ notes = "sic polytype electronic properties",
+}
+
+@Article{nelson69,
+ author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
+ collaboration = "",
+ title = "Growth and Properties of beta-Si{C} Single Crystals",
+ publisher = "AIP",
+ year = "1966",
+ journal = "Journal of Applied Physics",
+ volume = "37",
+ number = "1",
+ pages = "333--336",
+ URL = "http://link.aip.org/link/?JAP/37/333/1",
+ doi = "10.1063/1.1707837",
+ notes = "sic melt growth",
+}
+
+@Article{arkel25,
+ author = "A. E. van Arkel and J. H. de Boer",
+ title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
+ und Thoriummetall",
+ publisher = "WILEY-VCH Verlag GmbH",
+ year = "1925",
+ journal = "Z. Anorg. Chem.",
+ volume = "148",
+ pages = "345--350",
+ URL = "http://dx.doi.org/10.1002/zaac.19251480133",
+ doi = "10.1002/zaac.19251480133",
+ notes = "van arkel apparatus",
+}
+
+@Article{moers31,
+ author = "K. Moers",
+ year = "1931",
+ journal = "Z. Anorg. Chem.",
+ volume = "198",
+ pages = "293",
+ notes = "sic by van arkel apparatus, pyrolitical vapor growth
+ process",
+}
+
+@Article{kendall53,
+ author = "J. T. Kendall",
+ title = "Electronic Conduction in Silicon Carbide",
+ publisher = "AIP",
+ year = "1953",
+ journal = "The Journal of Chemical Physics",
+ volume = "21",
+ number = "5",
+ pages = "821--827",
+ URL = "http://link.aip.org/link/?JCP/21/821/1",
+ notes = "sic by van arkel apparatus, pyrolitical vapor growth
+ process",
+}
+
+@Article{lely55,
+ author = "J. A. Lely",
+ year = "1955",
+ journal = "Ber. Deut. Keram. Ges.",
+ volume = "32",
+ pages = "229",
+ notes = "lely sublimation growth process",
+}
+
+@Article{knippenberg63,
+ author = "W. F. Knippenberg",
+ year = "1963",
+ journal = "Philips Res. Repts.",
+ volume = "18",
+ pages = "161",
+ notes = "acheson process",
+}
+
+@Article{hoffmann82,
+ author = "L. Hoffmann and G. Ziegler and D. Theis and C.
+ Weyrich",
+ collaboration = "",
+ title = "Silicon carbide blue light emitting diodes with
+ improved external quantum efficiency",
+ publisher = "AIP",
+ year = "1982",
+ journal = "Journal of Applied Physics",
+ volume = "53",
+ number = "10",
+ pages = "6962--6967",
+ keywords = "light emitting diodes; silicon carbides; quantum
+ efficiency; visible radiation; experimental data;
+ epitaxy; fabrication; medium temperature; layers;
+ aluminium; nitrogen; substrates; pn junctions;
+ electroluminescence; spectra; current density;
+ optimization",
+ URL = "http://link.aip.org/link/?JAP/53/6962/1",
+ doi = "10.1063/1.330041",
+ notes = "blue led, sublimation process",
+}
+
+@Article{neudeck95,
+ author = "Philip Neudeck",
+ affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
+ Road 44135 Cleveland OH",
+ title = "Progress in silicon carbide semiconductor electronics
+ technology",
+ journal = "Journal of Electronic Materials",
+ publisher = "Springer Boston",
+ ISSN = "0361-5235",
+ keyword = "Chemistry and Materials Science",
+ pages = "283--288",
+ volume = "24",
+ issue = "4",
+ URL = "http://dx.doi.org/10.1007/BF02659688",
+ note = "10.1007/BF02659688",
+ year = "1995",
+ notes = "sic data, advantages of 3c sic",
+}
+
+@Article{bhatnagar93,
+ author = "M. Bhatnagar and B. J. Baliga",
+ journal = "Electron Devices, IEEE Transactions on",
+ title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
+ devices",
+ year = "1993",
+ month = mar,
+ volume = "40",
+ number = "3",
+ pages = "645--655",
+ keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
+ rectifiers;Si;SiC;breakdown voltages;drift region
+ properties;output characteristics;power MOSFETs;power
+ semiconductor devices;switching characteristics;thermal
+ analysis;Schottky-barrier diodes;electric breakdown of
+ solids;insulated gate field effect transistors;power
+ transistors;semiconductor materials;silicon;silicon
+ compounds;solid-state rectifiers;thermal analysis;",
+ doi = "10.1109/16.199372",
+ ISSN = "0018-9383",
+ notes = "comparison 3c 6h sic and si devices",
+}
+
+@Article{neudeck94,
+ author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
+ A. Powell and C. S. Salupo and L. G. Matus",
+ journal = "Electron Devices, IEEE Transactions on",
+ title = "Electrical properties of epitaxial 3{C}- and
+ 6{H}-Si{C} p-n junction diodes produced side-by-side on
+ 6{H}-Si{C} substrates",
+ year = "1994",
+ month = may,
+ volume = "41",
+ number = "5",
+ pages = "826--835",
+ keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
+ C;6H-SiC layers;6H-SiC substrates;CVD
+ process;SiC;chemical vapor deposition;doping;electrical
+ properties;epitaxial layers;light
+ emission;low-tilt-angle 6H-SiC substrates;p-n junction
+ diodes;polytype;rectification characteristics;reverse
+ leakage current;reverse voltages;temperature;leakage
+ currents;power electronics;semiconductor
+ diodes;semiconductor epitaxial layers;semiconductor
+ growth;semiconductor materials;silicon
+ compounds;solid-state rectifiers;substrates;vapour
+ phase epitaxial growth;",
+ doi = "10.1109/16.285038",
+ ISSN = "0018-9383",
+ notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
+ substrate",
+}
+
+@Article{schulze98,
+ author = "N. Schulze and D. L. Barrett and G. Pensl",
+ collaboration = "",
+ title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
+ single crystals by physical vapor transport",
+ publisher = "AIP",
+ year = "1998",
+ journal = "Applied Physics Letters",
+ volume = "72",
+ number = "13",
+ pages = "1632--1634",
+ keywords = "silicon compounds; semiconductor materials;
+ semiconductor growth; crystal growth from vapour;
+ photoluminescence; Hall mobility",
+ URL = "http://link.aip.org/link/?APL/72/1632/1",
+ doi = "10.1063/1.121136",
+ notes = "micropipe free 6h-sic pvt growth",
+}
+
+@Article{pirouz87,
+ author = "P. Pirouz and C. M. Chorey and J. A. Powell",
+ collaboration = "",
+ title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
+ publisher = "AIP",
+ year = "1987",
+ journal = "Applied Physics Letters",
+ volume = "50",
+ number = "4",
+ pages = "221--223",
+ keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
+ MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
+ VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
+ ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
+ BOUNDARIES",
+ URL = "http://link.aip.org/link/?APL/50/221/1",
+ doi = "10.1063/1.97667",
+ notes = "apb 3c-sic heteroepitaxy on si",
+}