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+ journal = "Ann. Phys. (Leipzig)",
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number = "4",
publisher = "WILEY-VCH Verlag",
affiliation = "Institut d. Universität f. theor. Physik Leipzig",
title = "Über die Quantenmechanik der Elektronen in
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publisher = "Springer Berlin / Heidelberg",
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keyword = "Physics and Astronomy",
@Article{erhart04,
title = "The role of thermostats in modeling vapor phase
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title = "Synthesis of nano-sized Si{C} precipitates in Si by
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pages = "827--835",
month = mar,
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title = "Carbon-mediated effects in silicon and in
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number = "2",
pages = "101--143",
author = "Henri Moissan",
title = "Nouvelles recherches sur la météorité de Cañon
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+ journal = "Mater. Sci. Forum",
volume = "264-268",
pages = "3--8",
year = "1998",
@Article{bean70,
title = "Low temperature electron irradiation of silicon
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volume = "8",
number = "3",
pages = "175--177",
Rauschenbach and B. Stritzker",
title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
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+ journal = "MRS Proc.",
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number = "",
pages = "171",
@Article{lindner96,
title = "Formation of buried epitaxial silicon carbide layers
in silicon by ion beam synthesis",
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+ journal = "Mater. Chem. Phys.",
volume = "46",
number = "2-3",
pages = "147--155",
@Article{calcagno96,
title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by
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+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "120",
number = "1-4",
pages = "121--124",
@Article{lindner98,
title = "Mechanisms of Si{C} Formation in the Ion Beam
Synthesis of 3{C}-Si{C} Layers in Silicon",
- journal = "Materials Science Forum",
+ journal = "Mater. Sci. Forum",
volume = "264-268",
pages = "215--218",
year = "1998",
title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
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+ journal = "Appl. Surf. Sci.",
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number = "1-4",
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@Article{liu_l02,
title = "Substrates for gallium nitride epitaxy",
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+ journal = "Mater. Sci. Eng., R",
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@Article{davis91,
author = "R. F. Davis and G. Kelner and M. Shur and J. W.
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+ journal = "Proc. IEEE",
title = "Thin film deposition and microelectronic and
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in monocrystalline alpha and beta silicon carbide",
@Article{sarro00,
title = "Silicon carbide as a new {MEMS} technology",
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+ journal = "Seonsor. Actuator. A",
volume = "82",
number = "1-3",
pages = "210--218",
title = "Status of silicon carbide (Si{C}) as a wide-bandgap
semiconductor for high-temperature applications: {A}
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+ journal = "Solid-State Electron.",
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pages = "1409--1422",
@Article{giancarli98,
title = "Design requirements for Si{C}/Si{C} composites
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+ journal = "Fusion Eng. Des.",
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number = "1-4",
pages = "165--171",
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title = "Electrical and optical characterization of Si{C}",
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+ journal = "Physica B",
volume = "185",
number = "1-4",
pages = "264--283",
by ion implantation",
publisher = "Taylor \& Francis",
year = "1976",
- journal = "Radiation Effects",
+ journal = "Radiat. Eff.",
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number = "1",
pages = "13--15",
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publisher = "Taylor \& Francis",
year = "1980",
- journal = "Radiation Effects",
+ journal = "Radiat. Eff.",
volume = "48",
number = "1",
pages = "7",
compounds formed in silicon by ion beam synthesis",
publisher = "Taylor \& Francis",
year = "1986",
- journal = "Radiation Effects",
+ journal = "Radiat. Eff.",
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pages = "71--81",
Netherlands",
title = "Boron implantations in silicon: {A} comparison of
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+ journal = "Appl. Phys. A",
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ISSN = "0947-8396",
keyword = "Physics and Astronomy",
author = "E Kasper",
title = "Superlattices of group {IV} elements, a new
possibility to produce direct band gap material",
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@Article{born27,
author = "M. Born and R. Oppenheimer",
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+ journal = "Ann. Phys. (Leipzig)",
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publisher = "WILEY-VCH Verlag",
@Article{thomas27,
title = "The calculation of atomic fields",
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+ journal = "Proc. Cambridge Philos. Soc.",
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pages = "542--548",
year = "1927",
title = "The Wave Mechanics of an Atom with a Non-Coulomb
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author = "D. R. Hartree",
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+ journal = "Proc. Cambridge Philos. Soc.",
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@Article{perdew02,
title = "Generalized gradient approximations for exchange and
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+ journal = "Physica B",
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pages = "1--6",
@Article{losev28,
title = "Luminous carborundum detector and detection effect and
oscillations with crystals",
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+ journal = "Philos. Mag. Series 7",
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number = "39",
pages = "1024--1044",
@Article{allendorf91,
title = "The adsorption of {H}-atoms on polycrystalline
[beta]-silicon carbide",
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+ journal = "Surf. Sci.",
volume = "258",
number = "1-3",
pages = "177--189",
@Article{newman85,
author = "Ronald C. Newman",
title = "Carbon in Crystalline Silicon",
- journal = "MRS Online Proceedings Library",
+ journal = "MRS Proc.",
volume = "59",
number = "",
pages = "403",
@Article{goesele85,
author = "U. Gösele",
title = "The Role of Carbon and Point Defects in Silicon",
- journal = "MRS Online Proceedings Library",
+ journal = "MRS Proc.",
volume = "59",
number = "",
pages = "419",