notes = "virial derivation for 3-body tersoff potential",
}
+@Article{nielsen83,
+ title = "First-Principles Calculation of Stress",
+ author = "O. H. Nielsen and Richard M. Martin",
+ journal = "Phys. Rev. Lett.",
+ volume = "50",
+ number = "9",
+ pages = "697--700",
+ numpages = "3",
+ year = "1983",
+ month = feb,
+ doi = "10.1103/PhysRevLett.50.697",
+ publisher = "American Physical Society",
+ notes = "generalization of virial theorem",
+}
+
+@Article{nielsen85,
+ title = "Quantum-mechanical theory of stress and force",
+ author = "O. H. Nielsen and Richard M. Martin",
+ journal = "Phys. Rev. B",
+ volume = "32",
+ number = "6",
+ pages = "3780--3791",
+ numpages = "11",
+ year = "1985",
+ month = sep,
+ doi = "10.1103/PhysRevB.32.3780",
+ publisher = "American Physical Society",
+ notes = "dft virial stress and forces",
+}
+
@Article{moissan04,
author = "Henri Moissan",
title = "Nouvelles recherches sur la météorité de Cañon
keywords = "Molecular dynamics simulations",
}
-@Article{zirkelbach10a,
+@Article{zirkelbach10,
title = "Defects in carbon implanted silicon calculated by
classical potentials and first-principles methods",
author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
publisher = "American Physical Society",
}
-@Article{zirkelbach10b,
+@Article{zirkelbach11a,
title = "First principles study of defects in carbon implanted
silicon",
journal = "to be published",
volume = "",
number = "",
pages = "",
- year = "2010",
- author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
- K. N. Lindner and W. G. Schmidt and E. Rauls",
+ year = "2011",
+ author = "F. Zirkelbach and B. Stritzker and J. K. N. Lindner
+ and W. G. Schmidt and E. Rauls",
}
-@Article{zirkelbach10c,
+@Article{zirkelbach11b,
title = "...",
journal = "to be published",
volume = "",
number = "",
pages = "",
- year = "2010",
+ year = "2011",
author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
K. N. Lindner and W. G. Schmidt and E. Rauls",
}
+@Article{lindner95,
+ author = "J. K. N. Lindner and A. Frohnwieser and B.
+ Rauschenbach and B. Stritzker",
+ title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
+ Layers in Silicon",
+ journal = "MRS Online Proceedings Library",
+ volume = "354",
+ number = "",
+ pages = "171",
+ year = "1994",
+ doi = "10.1557/PROC-354-171",
+ URL = "http://dx.doi.org/10.1557/PROC-354-171",
+ eprint = "http://journals.cambridge.org/article_S1946427400420853",
+ notes = "first time ibs at moderate temperatures",
+}
+
@Article{lindner99,
title = "Controlling the density distribution of Si{C}
nanocrystals for the ion beam synthesis of buried Si{C}
author = "W. Wesch",
}
+@Article{davis91,
+ author = "R. F. Davis and G. Kelner and M. Shur and J. W.
+ Palmour and J. A. Edmond",
+ journal = "Proceedings of the IEEE",
+ title = "Thin film deposition and microelectronic and
+ optoelectronic device fabrication and characterization
+ in monocrystalline alpha and beta silicon carbide",
+ year = "1991",
+ month = may,
+ volume = "79",
+ number = "5",
+ pages = "677--701",
+ keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
+ diode;SiC;dry etching;electrical
+ contacts;etching;impurity incorporation;optoelectronic
+ device fabrication;solid-state devices;surface
+ chemistry;Schottky effect;Schottky gate field effect
+ transistors;Schottky-barrier
+ diodes;etching;heterojunction bipolar
+ transistors;insulated gate field effect
+ transistors;light emitting diodes;semiconductor
+ materials;semiconductor thin films;silicon compounds;",
+ doi = "10.1109/5.90132",
+ ISSN = "0018-9219",
+ notes = "sic growth methods",
+}
+
@Article{morkoc94,
author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
Lin and B. Sverdlov and M. Burns",
notes = "improved sic on off-axis si substrates, reduced apbs",
}
+@Article{ueda90,
+ title = "Crystal growth of Si{C} by step-controlled epitaxy",
+ journal = "Journal of Crystal Growth",
+ volume = "104",
+ number = "3",
+ pages = "695--700",
+ year = "1990",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(90)90013-B",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
+ author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
+ Matsunami",
+ notes = "step-controlled epitaxy model",
+}
+
@Article{kimoto93,
author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
and Hiroyuki Matsunami",
notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
}
+@Article{powell90_2,
+ author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
+ J. Choyke and J. L. Bradshaw and L. Henderson and M.
+ Yoganathan and J. Yang and P. Pirouz",
+ collaboration = "",
+ title = "Growth of high quality 6{H}-Si{C} epitaxial films on
+ vicinal (0001) 6{H}-Si{C} wafers",
+ publisher = "AIP",
+ year = "1990",
+ journal = "Applied Physics Letters",
+ volume = "56",
+ number = "15",
+ pages = "1442--1444",
+ keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
+ PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
+ TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
+ DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
+ URL = "http://link.aip.org/link/?APL/56/1442/1",
+ doi = "10.1063/1.102492",
+ notes = "cvd of 6h-sic on 6h-sic",
+}
+
+@Article{kong88_2,
+ author = "H. S. Kong and J. T. Glass and R. F. Davis",
+ collaboration = "",
+ title = "Chemical vapor deposition and characterization of
+ 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
+ substrates",
+ publisher = "AIP",
+ year = "1988",
+ journal = "Journal of Applied Physics",
+ volume = "64",
+ number = "5",
+ pages = "2672--2679",
+ keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
+ COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
+ MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
+ STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
+ PHASE EPITAXY; CRYSTAL ORIENTATION",
+ URL = "http://link.aip.org/link/?JAP/64/2672/1",
+ doi = "10.1063/1.341608",
+}
+
@Article{powell90,
author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
J. Choyke and J. L. Bradshaw and L. Henderson and M.
notes = "cvd of 3c-sic on 6h-sic",
}
+@Article{kong88,
+ author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
+ Rozgonyi and K. L. More",
+ collaboration = "",
+ title = "An examination of double positioning boundaries and
+ interface misfit in beta-Si{C} films on alpha-Si{C}
+ substrates",
+ publisher = "AIP",
+ year = "1988",
+ journal = "Journal of Applied Physics",
+ volume = "63",
+ number = "8",
+ pages = "2645--2650",
+ keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
+ FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
+ FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
+ MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
+ STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
+ URL = "http://link.aip.org/link/?JAP/63/2645/1",
+ doi = "10.1063/1.341004",
+}
+
+@Article{powell91,
+ author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
+ Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
+ and W. J. Choyke and L. Clemen and M. Yoganathan",
+ collaboration = "",
+ title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
+ on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
+ publisher = "AIP",
+ year = "1991",
+ journal = "Applied Physics Letters",
+ volume = "59",
+ number = "3",
+ pages = "333--335",
+ keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
+ PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
+ MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
+ URL = "http://link.aip.org/link/?APL/59/333/1",
+ doi = "10.1063/1.105587",
+}
+
@Article{yuan95,
author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
Thokala and M. J. Loboda",
notes = "3c-sic on 6h-sic, cvd, reduced temperature",
}
+@Article{kaneda87,
+ title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
+ properties of its p-n junction",
+ journal = "Journal of Crystal Growth",
+ volume = "81",
+ number = "1-4",
+ pages = "536--542",
+ year = "1987",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(87)90449-0",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
+ author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
+ and Takao Tanaka",
+ notes = "first time ssmbe of 3c-sic on 6h-sic",
+}
+
@Article{fissel95,
title = "Epitaxial growth of Si{C} thin films on Si-stabilized
[alpha]-Si{C}(0001) at low temperatures by solid-source
notes = "mbe 3c-sic on si and 6h-sic",
}
+@Article{fissel96,
+ author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
+ Bernd Schr{\"{o}}ter and Wolfgang Richter",
+ collaboration = "",
+ title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
+ migration enhanced epitaxy controlled to an atomic
+ level using surface superstructures",
+ publisher = "AIP",
+ year = "1996",
+ journal = "Applied Physics Letters",
+ volume = "68",
+ number = "9",
+ pages = "1204--1206",
+ keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
+ NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
+ SURFACE STRUCTURE",
+ URL = "http://link.aip.org/link/?APL/68/1204/1",
+ doi = "10.1063/1.115969",
+ notes = "ss mbe sic, superstructure, reconstruction",
+}
+
+@Article{righi03,
+ title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
+ author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
+ C. M. Bertoni and A. Catellani",
+ journal = "Phys. Rev. Lett.",
+ volume = "91",
+ number = "13",
+ pages = "136101",
+ numpages = "4",
+ year = "2003",
+ month = sep,
+ doi = "10.1103/PhysRevLett.91.136101",
+ publisher = "American Physical Society",
+ notes = "dft calculations mbe sic growth",
+}
+
@Article{borders71,
author = "J. A. Borders and S. T. Picraux and W. Beezhold",
collaboration = "",
ideas",
}
+@Article{edelman76,
+ author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
+ and E. V. Lubopytova",
+ title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
+ by ion implantation",
+ publisher = "Taylor \& Francis",
+ year = "1976",
+ journal = "Radiation Effects",
+ volume = "29",
+ number = "1",
+ pages = "13--15",
+ URL = "http://www.informaworld.com/10.1080/00337577608233477",
+ notes = "3c-sic for different temperatures, amorphous, poly,
+ single crystalline",
+}
+
+@Article{akimchenko80,
+ author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
+ Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
+ title = "Structure and optical properties of silicon implanted
+ by high doses of 70 and 310 ke{V} carbon ions",
+ publisher = "Taylor \& Francis",
+ year = "1980",
+ journal = "Radiation Effects",
+ volume = "48",
+ number = "1",
+ pages = "7",
+ URL = "http://www.informaworld.com/10.1080/00337578008209220",
+ notes = "3c-sic nucleation by thermal spikes",
+}
+
+@Article{kimura81,
+ title = "Structure and annealing properties of silicon carbide
+ thin layers formed by implantation of carbon ions in
+ silicon",
+ journal = "Thin Solid Films",
+ volume = "81",
+ number = "4",
+ pages = "319--327",
+ year = "1981",
+ note = "",
+ ISSN = "0040-6090",
+ doi = "DOI: 10.1016/0040-6090(81)90516-2",
+ URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
+ author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
+ Yugo",
+}
+
+@Article{kimura82,
+ title = "Characteristics of the synthesis of [beta]-Si{C} by
+ the implantation of carbon ions into silicon",
+ journal = "Thin Solid Films",
+ volume = "94",
+ number = "3",
+ pages = "191--198",
+ year = "1982",
+ note = "",
+ ISSN = "0040-6090",
+ doi = "DOI: 10.1016/0040-6090(82)90295-4",
+ URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
+ author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
+ Yugo",
+}
+
+@Article{reeson86,
+ author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
+ C. D. Meekison and C. Marsh and G. R. Booker and R. J.
+ Chater and J. A. Iulner and J. Davis",
+ title = "Formation mechanisms and structures of insulating
+ compounds formed in silicon by ion beam synthesis",
+ publisher = "Taylor \& Francis",
+ year = "1986",
+ journal = "Radiation Effects",
+ volume = "99",
+ number = "1",
+ pages = "71--81",
+ URL = "http://www.informaworld.com/10.1080/00337578608209614",
+ notes = "ibs, comparison with sio and sin, higher temp or
+ time",
+}
+
@Article{reeson87,
author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
J. Davis and G. E. Celler",
notes = "nice tem images, sic by ibs",
}
+@Article{martin90,
+ author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
+ and M. Olivier and A. M. Papon and G. Rolland",
+ collaboration = "",
+ title = "High-temperature ion beam synthesis of cubic Si{C}",
+ publisher = "AIP",
+ year = "1990",
+ journal = "Journal of Applied Physics",
+ volume = "67",
+ number = "6",
+ pages = "2908--2912",
+ keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
+ IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
+ TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
+ INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
+ ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
+ REACTIONS; MONOCRYSTALS",
+ URL = "http://link.aip.org/link/?JAP/67/2908/1",
+ doi = "10.1063/1.346092",
+ notes = "triple energy implantation to overcome high annealing
+ temepratures",
+}
+
@Article{scace59,
author = "R. I. Scace and G. A. Slack",
collaboration = "",
ENERGY",
URL = "http://link.aip.org/link/?APL/62/3336/1",
doi = "10.1063/1.109063",
- notes = "interfacial energy of cubic sic and si",
+ notes = "interfacial energy of cubic sic and si, si self
+ interstitials necessary for precipitation, volume
+ decrease, high interface energy",
}
@Article{chaussende08,
Ion `Hot' Implantation",
author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
Hirao and Naoki Arai and Tomio Izumi",
- journal = "Japanese Journal of Applied Physics",
+ journal = "Japanese J. Appl. Phys.",
volume = "31",
number = "Part 1, No. 2A",
pages = "343--347",
pages = "S2643",
URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
year = "2004",
- notes = "ab inito init, vibrational modes, c defect in si",
+ notes = "ab inito dft intro, vibrational modes, c defect in
+ si",
}
@Article{park02,
Matsunami",
notes = "defects in 3c-sis cvd on si, anti phase boundaries",
}
+
+@Article{desjardins96,
+ author = "P. Desjardins and J. E. Greene",
+ collaboration = "",
+ title = "Step-flow epitaxial growth on two-domain surfaces",
+ publisher = "AIP",
+ year = "1996",
+ journal = "Journal of Applied Physics",
+ volume = "79",
+ number = "3",
+ pages = "1423--1434",
+ keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
+ FILM GROWTH; SURFACE STRUCTURE",
+ URL = "http://link.aip.org/link/?JAP/79/1423/1",
+ doi = "10.1063/1.360980",
+ notes = "apb model",
+}
+
+@Article{henke95,
+ author = "S. Henke and B. Stritzker and B. Rauschenbach",
+ collaboration = "",
+ title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
+ carbonization of silicon",
+ publisher = "AIP",
+ year = "1995",
+ journal = "Journal of Applied Physics",
+ volume = "78",
+ number = "3",
+ pages = "2070--2073",
+ keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
+ FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
+ STRUCTURE",
+ URL = "http://link.aip.org/link/?JAP/78/2070/1",
+ doi = "10.1063/1.360184",
+ notes = "ssmbe of sic on si, lower temperatures",
+}
+
+@Article{fuyuki89,
+ title = "Atomic layer epitaxy of cubic Si{C} by gas source
+ {MBE} using surface superstructure",
+ journal = "Journal of Crystal Growth",
+ volume = "95",
+ number = "1-4",
+ pages = "461--463",
+ year = "1989",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(89)90442-9",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
+ author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
+ Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
+ notes = "gas source mbe of 3c-sic on 6h-sic",
+}
+
+@Article{yoshinobu92,
+ author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
+ and Takashi Fuyuki and Hiroyuki Matsunami",
+ collaboration = "",
+ title = "Lattice-matched epitaxial growth of single crystalline
+ 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
+ molecular beam epitaxy",
+ publisher = "AIP",
+ year = "1992",
+ journal = "Applied Physics Letters",
+ volume = "60",
+ number = "7",
+ pages = "824--826",
+ keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
+ EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
+ INTERFACE STRUCTURE",
+ URL = "http://link.aip.org/link/?APL/60/824/1",
+ doi = "10.1063/1.107430",
+ notes = "gas source mbe of 3c-sic on 6h-sic",
+}
+
+@Article{yoshinobu90,
+ title = "Atomic level control in gas source {MBE} growth of
+ cubic Si{C}",
+ journal = "Journal of Crystal Growth",
+ volume = "99",
+ number = "1-4",
+ pages = "520--524",
+ year = "1990",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(90)90575-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
+ author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
+ Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
+ notes = "gas source mbe of 3c-sic on 3c-sic",
+}
+
+@Article{fuyuki93,
+ title = "Atomic layer epitaxy controlled by surface
+ superstructures in Si{C}",
+ journal = "Thin Solid Films",
+ volume = "225",
+ number = "1-2",
+ pages = "225--229",
+ year = "1993",
+ note = "",
+ ISSN = "0040-6090",
+ doi = "DOI: 10.1016/0040-6090(93)90159-M",
+ URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
+ author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
+ Matsunami",
+ notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
+ epitaxy, ale",
+}
+
+@Article{hara93,
+ title = "Microscopic mechanisms of accurate layer-by-layer
+ growth of [beta]-Si{C}",
+ journal = "Thin Solid Films",
+ volume = "225",
+ number = "1-2",
+ pages = "240--243",
+ year = "1993",
+ note = "",
+ ISSN = "0040-6090",
+ doi = "DOI: 10.1016/0040-6090(93)90162-I",
+ URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
+ author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
+ and S. Misawa and E. Sakuma and S. Yoshida",
+ notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
+ epitaxy, ale",
+}
+
+@Article{tanaka94,
+ author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
+ collaboration = "",
+ title = "Effects of gas flow ratio on silicon carbide thin film
+ growth mode and polytype formation during gas-source
+ molecular beam epitaxy",
+ publisher = "AIP",
+ year = "1994",
+ journal = "Applied Physics Letters",
+ volume = "65",
+ number = "22",
+ pages = "2851--2853",
+ keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
+ TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
+ NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
+ FLOW; FLOW RATE",
+ URL = "http://link.aip.org/link/?APL/65/2851/1",
+ doi = "10.1063/1.112513",
+ notes = "gas source mbe of 6h-sic on 6h-sic",
+}
+
+@Article{fuyuki97,
+ author = "T. Fuyuki and T. Hatayama and H. Matsunami",
+ title = "Heterointerface Control and Epitaxial Growth of
+ 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
+ publisher = "WILEY-VCH Verlag",
+ year = "1997",
+ journal = "physica status solidi (b)",
+ volume = "202",
+ pages = "359--378",
+ notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
+ temperatures 750",
+}
+
+@Article{takaoka98,
+ title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
+ journal = "Journal of Crystal Growth",
+ volume = "183",
+ number = "1-2",
+ pages = "175--182",
+ year = "1998",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/S0022-0248(97)00391-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
+ author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
+ keywords = "Reflection high-energy electron diffraction (RHEED)",
+ keywords = "Scanning electron microscopy (SEM)",
+ keywords = "Silicon carbide",
+ keywords = "Silicon",
+ keywords = "Island growth",
+ notes = "lower temperature, 550-700",
+}
+
+@Article{hatayama95,
+ title = "Low-temperature heteroepitaxial growth of cubic Si{C}
+ on Si using hydrocarbon radicals by gas source
+ molecular beam epitaxy",
+ journal = "Journal of Crystal Growth",
+ volume = "150",
+ number = "Part 2",
+ pages = "934--938",
+ year = "1995",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(95)80077-P",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
+ author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
+ and Hiroyuki Matsunami",
+}
+
+@Article{heine91,
+ author = "Volker Heine and Ching Cheng and Richard J. Needs",
+ title = "The Preference of Silicon Carbide for Growth in the
+ Metastable Cubic Form",
+ journal = "Journal of the American Ceramic Society",
+ volume = "74",
+ number = "10",
+ publisher = "Blackwell Publishing Ltd",
+ ISSN = "1551-2916",
+ URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
+ doi = "10.1111/j.1151-2916.1991.tb06811.x",
+ pages = "2630--2633",
+ keywords = "silicon carbide, crystal growth, crystal structure,
+ calculations, stability",
+ year = "1991",
+ notes = "3c-sic metastable, 3c-sic preferred growth, sic
+ polytype dft calculation refs",
+}
+
+@Article{allendorf91,
+ title = "The adsorption of {H}-atoms on polycrystalline
+ [beta]-silicon carbide",
+ journal = "Surface Science",
+ volume = "258",
+ number = "1-3",
+ pages = "177--189",
+ year = "1991",
+ note = "",
+ ISSN = "0039-6028",
+ doi = "DOI: 10.1016/0039-6028(91)90912-C",
+ URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
+ author = "Mark D. Allendorf and Duane A. Outka",
+ notes = "h adsorption on 3c-sic",
+}
+
+@Article{eaglesham93,
+ author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
+ D. P. Adams and S. M. Yalisove",
+ collaboration = "",
+ title = "Effect of {H} on Si molecular-beam epitaxy",
+ publisher = "AIP",
+ year = "1993",
+ journal = "Journal of Applied Physics",
+ volume = "74",
+ number = "11",
+ pages = "6615--6618",
+ keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
+ CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
+ DIFFUSION; ADSORPTION",
+ URL = "http://link.aip.org/link/?JAP/74/6615/1",
+ doi = "10.1063/1.355101",
+ notes = "h incorporation on si surface, lower surface
+ mobility",
+}
+
+@Article{newman85,
+ author = "Ronald C. Newman",
+ title = "Carbon in Crystalline Silicon",
+ journal = "MRS Online Proceedings Library",
+ volume = "59",
+ number = "",
+ pages = "403",
+ year = "1985",
+ doi = "10.1557/PROC-59-403",
+ URL = "http://dx.doi.org/10.1557/PROC-59-403",
+ eprint = "http://journals.cambridge.org/article_S194642740054367X",
+}
+
+@Article{goesele85,
+ author = "U. Gösele",
+ title = "The Role of Carbon and Point Defects in Silicon",
+ journal = "MRS Online Proceedings Library",
+ volume = "59",
+ number = "",
+ pages = "419",
+ year = "1985",
+ doi = "10.1557/PROC-59-419",
+ URL = "http://dx.doi.org/10.1557/PROC-59-419",
+ eprint = "http://journals.cambridge.org/article_S1946427400543681",
+}
+
+@Article{puska98,
+ title = "Convergence of supercell calculations for point
+ defects in semiconductors: Vacancy in silicon",
+ author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
+ M. Nieminen",
+ journal = "Phys. Rev. B",
+ volume = "58",
+ number = "3",
+ pages = "1318--1325",
+ numpages = "7",
+ year = "1998",
+ month = jul,
+ doi = "10.1103/PhysRevB.58.1318",
+ publisher = "American Physical Society",
+ notes = "convergence k point supercell size, vacancy in
+ silicon",
+}
+
+@Article{serre95,
+ author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
+ Romano-Rodr\'{\i}guez and J. R. Morante and R.
+ K{\"{o}}gler and W. Skorupa",
+ collaboration = "",
+ title = "Spectroscopic characterization of phases formed by
+ high-dose carbon ion implantation in silicon",
+ publisher = "AIP",
+ year = "1995",
+ journal = "Journal of Applied Physics",
+ volume = "77",
+ number = "7",
+ pages = "2978--2984",
+ keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
+ FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
+ PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
+ DEPENDENCE; PRECIPITATES; ANNEALING",
+ URL = "http://link.aip.org/link/?JAP/77/2978/1",
+ doi = "10.1063/1.358714",
+}