\chapter{Summary and conclusions}
\label{chapter:summary}
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-%\paragraph{To summarize,}
{\bf To summarize},
in a short review of the C/Si compound and the fabrication of the technologically promising semiconductor SiC by IBS, two controversial assumptions of the precipitation mechanism of 3C-SiC in c-Si are elaborated.
}
Indeed, utilizing increased temperatures is assumed to constitute a necessary condition to simulate IBS of 3C-SiC in c-Si.
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% conclusions 2nd part
-%\paragraph{Conclusions}
{\bf Conclusions}
concerning the SiC conversion mechanism are derived from results of both, first-principles and classical potential calculations.
Although classical potential MD calculations fail to directly simulate the precipitation of SiC, obtained results, on the one hand, reinforce previous findings of the first-principles investigations and, on the other hand, allow further conclusions on the SiC precipitation in Si.