% maybe preliminary conclusions here ...
Classical potential MD calculations targeting the direct simulation of SiC precipitation in Si are adopted.
-Therefore, the necessary amount of C is gradually incorporated into a large c-Si host.
+Therefor, the necessary amount of C is gradually incorporated into a large c-Si host.
Simulations at temperatures used in IBS result in structures dominated by the C$_{\text{i}}$ \hkl<1 0 0> DB and its combinations if C is inserted into the total volume.
Incorporation into volumes $V_2$ and $V_3$, which correspond to the volume of the expected precipitate and the volume containing the necessary amount of Si, lead to an amorphous SiC-like structure within the respective volume.
Both results are not expected with respect to the outcome of the IBS experiments.