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{\LARGE\bf
- Simulation study of the precipitation process of silicon carbide in carbon doped silicon \\
+ Atomistic simulation study on silicon carbide precipitation in silicon\\
}
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{\large
- Augsburg, im Oktober 2006
+ Augsburg, September 2011
}
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-Erstkorrektor: & Prof. Dr. Bernd Stritzker \\
-Zweitkorrektor: & Prof. Dr. Kai Nordlund \\
-Tag der m"undlichen Pr"ufung: & 17. November 2006 \\
+Erstgutachter: & Prof. Dr. Bernd Stritzker \\
+Zweitgutachter: & Priv.-Doz. Dr. habil. Volker Eyert \\
+Drittgutachter: & Prof. Dr. Kai Nordlund \\
+Tag der m"undlichen Pr"ufung: & \underline{\hspace*{0.7cm}}. \underline{\hspace*{0.7cm}}. 2011\\
\end{tabular}
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