+% experimental stuff - strained silicon
+
+@Article{strane96,
+ title = {Carbon incorporation into Si at high concentrations
+ by ion implantation and solid phase epitaxy},
+ author = {J. W. Strane and S. R. Lee and H. J. Stein and S. T. Picraux and
+ J. K. Watanabe and J. W. Mayer},
+ journal = {J. Appl. Phys.},
+ volume = {79},
+ pages = {637},
+ year = {1996},
+ month = {January},
+ doi = {10.1063/1.360806},
+ notes = {strained silicon, carbon supersaturation}
+}
+
+% sic formation mechanism
+
+@article{werner97,
+ author = {P. Werner and S. Eichler and G. Mariani and R. K\"{o}gler and W. Skorupa},
+ title = {Investigation of C[sub x]Si defects in C implanted silicon by transmission electron microscopy},
+ publisher = {AIP},
+ year = {1997},
+ journal = {Applied Physics Letters},
+ volume = {70},
+ number = {2},
+ pages = {252-254},
+ keywords = {silicon; ion implantation; carbon; crystal defects;
+ transmission electron microscopy; annealing;
+ positron annihilation; secondary ion mass spectroscopy;
+ buried layers; precipitation},
+ url = {http://link.aip.org/link/?APL/70/252/1},
+ doi = {10.1063/1.118381},
+ notes = {si-c complexes, agglomerate, sic in si matrix, sic precipitate}
+}
+
+@article{strane94,
+ author = {J. W. Strane and H. J. Stein and S. R. Lee and S. T. Picraux and
+ J. K. Watanabe and J. W. Mayer},
+ collaboration = {},
+ title = {Precipitation and relaxation in strained
+ Si[sub 1 - y]C[sub y]/Si heterostructures},
+ publisher = {AIP},
+ year = {1994},
+ journal = {Journal of Applied Physics},
+ volume = {76},
+ number = {6},
+ pages = {3656-3668},
+ keywords = {SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS},
+ url = {http://link.aip.org/link/?JAP/76/3656/1},
+ doi = {10.1063/1.357429},
+ notes = {strained si-c to 3c-sic, carbon nucleation + refs}
+}
+
+% properties sic
+
+@Article{edgar92,
+ title = {Prospects for device implementation of wide band gap semiconductors},
+ author = {J. H. Edgar},
+ journal = {J. Mater. Res.},
+ volume = {7},
+ pages = {235},
+ year = {1992},
+ month = {January},
+ doi = {10.1557/JMR.1992.0235},
+ notes = {properties wide band gap semiconductor, sic polytypes}
+}
+