+@Article{weitzel96,
+ author = "C. E. Weitzel and J. W. Palmour and Jr. {Carter, C.H.}
+ and K. Moore and K. K. Nordquist and S. Allen and C.
+ Thero and M. Bhatnagar",
+ journal = "IEEE Trans. Electron Devices",
+ title = "Silicon carbide high-power devices",
+ year = "1996",
+ month = oct,
+ volume = "43",
+ number = "10",
+ pages = "1732--1741",
+ keywords = "1200 V;1400 V;4H-SiC;500 MHz to 32 GHz;57 W;Schottky
+ barrier diodes;SiC;SiC devices;UMOSFET;current
+ density;high electric breakdown field;high saturated
+ electron drift velocity;high thermal
+ conductivity;high-power devices;packaged SIT;submicron
+ gate length MESFET;Schottky diodes;current
+ density;electric breakdown;power MESFET;power
+ MOSFET;power semiconductor devices;power semiconductor
+ diodes;reviews;silicon compounds;static induction
+ transistors;wide band gap semiconductors;",
+ doi = "10.1109/16.536819",
+ ISSN = "0018-9383",
+ notes = "high power devices",
+}
+
+@Article{zhu08,
+ author = "Lin Zhu and T. P. Chow",
+ journal = "IEEE Trans. Electron Devices",
+ title = "Advanced High-Voltage 4{H}-Si{C} Schottky Rectifiers",
+ year = "2008",
+ month = aug,
+ volume = "55",
+ number = "8",
+ pages = "1871--1874",
+ keywords = "H-SiC;OFF-state characteristics;ON-state
+ characteristics;blocking capability;high-voltage
+ Schottky rectifier;junction barrier Schottky
+ rectifier;lateral channel JBS rectifier;leakage
+ current;pinlike reverse characteristics;Schottky
+ barriers;Schottky diodes;leakage currents;rectifying
+ circuits;",
+ doi = "10.1109/TED.2008.926642",
+ ISSN = "0018-9383",
+}
+
+@Article{brown93,
+ author = "D. M. Brown and E. T. Downey and M. Ghezzo and J. W.
+ Kretchmer and R. J. Saia and Y. S. Liu and J. A. Edmond
+ and G. Gati and J. M. Pimbley and W. E. Schneider",
+ journal = "IEEE Trans. Electron Devices",
+ title = "Silicon carbide {UV} photodiodes",
+ year = "1993",
+ month = feb,
+ volume = "40",
+ number = "2",
+ pages = "325--333",
+ keywords = "200 to 400 nm;6H epitaxial layers;SiC photodiodes;UV
+ responsivity characteristics;low dark current;low light
+ level UV detection;quantum
+ efficiency;reproducibility;reverse current
+ leakage;short circuit output current;leakage
+ currents;photodiodes;semiconductor
+ materials;short-circuit currents;silicon
+ compounds;ultraviolet detectors;",
+ doi = "10.1109/16.182509",
+ ISSN = "0018-9383",
+ notes = "sic photo diodes, uv detector",
+}
+
+@Article{yan04,
+ author = "Feng Yan and Xiaobin Xin and S. Aslam and Yuegang Zhao
+ and D. Franz and J. H. Zhao and M. Weiner",
+ journal = "IEEE J. Quantum Electron.",
+ title = "4{H}-Si{C} {UV} photo detectors with large area and
+ very high specific detectivity",
+ year = "2004",
+ month = sep,
+ volume = "40",
+ number = "9",
+ pages = "1315--1320",
+ keywords = "-1 V; 1.2E-14 A; 210 to 350 nm; 4H-SiC UV
+ photodetectors; 5 mm; Pt/4H-SiC Schottky photodiodes;
+ SiC-Pt; leakage current; photoresponse spectra; quantum
+ efficiency; specific detectivity; Schottky diodes;
+ photodetectors; platinum; silicon compounds; wide band
+ gap semiconductors;",
+ doi = "10.1109/JQE.2004.833196",
+ ISSN = "0018-9197",
+ notes = "uv detector",
+}
+