+
+@Article{allendorf91,
+ title = "The adsorption of {H}-atoms on polycrystalline
+ [beta]-silicon carbide",
+ journal = "Surface Science",
+ volume = "258",
+ number = "1-3",
+ pages = "177--189",
+ year = "1991",
+ note = "",
+ ISSN = "0039-6028",
+ doi = "DOI: 10.1016/0039-6028(91)90912-C",
+ URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
+ author = "Mark D. Allendorf and Duane A. Outka",
+ notes = "h adsorption on 3c-sic",
+}
+
+@Article{eaglesham93,
+ author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
+ D. P. Adams and S. M. Yalisove",
+ collaboration = "",
+ title = "Effect of {H} on Si molecular-beam epitaxy",
+ publisher = "AIP",
+ year = "1993",
+ journal = "Journal of Applied Physics",
+ volume = "74",
+ number = "11",
+ pages = "6615--6618",
+ keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
+ CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
+ DIFFUSION; ADSORPTION",
+ URL = "http://link.aip.org/link/?JAP/74/6615/1",
+ doi = "10.1063/1.355101",
+ notes = "h incorporation on si surface, lower surface
+ mobility",
+}
+
+@Article{newman85,
+ author = "Ronald C. Newman",
+ title = "Carbon in Crystalline Silicon",
+ journal = "MRS Online Proceedings Library",
+ volume = "59",
+ number = "",
+ pages = "403",
+ year = "1985",
+ doi = "10.1557/PROC-59-403",
+ URL = "http://dx.doi.org/10.1557/PROC-59-403",
+ eprint = "http://journals.cambridge.org/article_S194642740054367X",
+}
+
+@Article{newman61,
+ title = "The diffusivity of carbon in silicon",
+ journal = "Journal of Physics and Chemistry of Solids",
+ volume = "19",
+ number = "3-4",
+ pages = "230--234",
+ year = "1961",
+ note = "",
+ ISSN = "0022-3697",
+ doi = "DOI: 10.1016/0022-3697(61)90032-4",
+ URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
+ author = "R. C. Newman and J. Wakefield",
+ notes = "diffusivity of substitutional c in si",
+}
+
+@Article{goesele85,
+ author = "U. Gösele",
+ title = "The Role of Carbon and Point Defects in Silicon",
+ journal = "MRS Online Proceedings Library",
+ volume = "59",
+ number = "",
+ pages = "419",
+ year = "1985",
+ doi = "10.1557/PROC-59-419",
+ URL = "http://dx.doi.org/10.1557/PROC-59-419",
+ eprint = "http://journals.cambridge.org/article_S1946427400543681",
+}
+
+@Article{puska98,
+ title = "Convergence of supercell calculations for point
+ defects in semiconductors: Vacancy in silicon",
+ author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
+ M. Nieminen",
+ journal = "Phys. Rev. B",
+ volume = "58",
+ number = "3",
+ pages = "1318--1325",
+ numpages = "7",
+ year = "1998",
+ month = jul,
+ doi = "10.1103/PhysRevB.58.1318",
+ publisher = "American Physical Society",
+ notes = "convergence k point supercell size, vacancy in
+ silicon",
+}
+
+@Article{serre95,
+ author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
+ Romano-Rodr\'{\i}guez and J. R. Morante and R.
+ K{\"{o}}gler and W. Skorupa",
+ collaboration = "",
+ title = "Spectroscopic characterization of phases formed by
+ high-dose carbon ion implantation in silicon",
+ publisher = "AIP",
+ year = "1995",
+ journal = "Journal of Applied Physics",
+ volume = "77",
+ number = "7",
+ pages = "2978--2984",
+ keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
+ FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
+ PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
+ DEPENDENCE; PRECIPITATES; ANNEALING",
+ URL = "http://link.aip.org/link/?JAP/77/2978/1",
+ doi = "10.1063/1.358714",
+}