+@Article{fuyuki89,
+ title = "Atomic layer epitaxy of cubic Si{C} by gas source
+ {MBE} using surface superstructure",
+ journal = "Journal of Crystal Growth",
+ volume = "95",
+ number = "1-4",
+ pages = "461--463",
+ year = "1989",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(89)90442-9",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
+ author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
+ Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
+ notes = "gas source mbe of 3c-sic on 6h-sic",
+}
+
+@Article{yoshinobu92,
+ author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
+ and Takashi Fuyuki and Hiroyuki Matsunami",
+ collaboration = "",
+ title = "Lattice-matched epitaxial growth of single crystalline
+ 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
+ molecular beam epitaxy",
+ publisher = "AIP",
+ year = "1992",
+ journal = "Applied Physics Letters",
+ volume = "60",
+ number = "7",
+ pages = "824--826",
+ keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
+ EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
+ INTERFACE STRUCTURE",
+ URL = "http://link.aip.org/link/?APL/60/824/1",
+ doi = "10.1063/1.107430",
+ notes = "gas source mbe of 3c-sic on 6h-sic",
+}
+
+@Article{yoshinobu90,
+ title = "Atomic level control in gas source {MBE} growth of
+ cubic Si{C}",
+ journal = "Journal of Crystal Growth",
+ volume = "99",
+ number = "1-4",
+ pages = "520--524",
+ year = "1990",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(90)90575-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
+ author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
+ Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
+ notes = "gas source mbe of 3c-sic on 3c-sic",
+}
+
+@Article{fuyuki93,
+ title = "Atomic layer epitaxy controlled by surface
+ superstructures in Si{C}",
+ journal = "Thin Solid Films",
+ volume = "225",
+ number = "1-2",
+ pages = "225--229",
+ year = "1993",
+ note = "",
+ ISSN = "0040-6090",
+ doi = "DOI: 10.1016/0040-6090(93)90159-M",
+ URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
+ author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
+ Matsunami",
+ notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
+ epitaxy, ale",
+}
+
+@Article{hara93,
+ title = "Microscopic mechanisms of accurate layer-by-layer
+ growth of [beta]-Si{C}",
+ journal = "Thin Solid Films",
+ volume = "225",
+ number = "1-2",
+ pages = "240--243",
+ year = "1993",
+ note = "",
+ ISSN = "0040-6090",
+ doi = "DOI: 10.1016/0040-6090(93)90162-I",
+ URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
+ author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
+ and S. Misawa and E. Sakuma and S. Yoshida",
+ notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
+ epitaxy, ale",
+}
+
+@Article{tanaka94,
+ author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
+ collaboration = "",
+ title = "Effects of gas flow ratio on silicon carbide thin film
+ growth mode and polytype formation during gas-source
+ molecular beam epitaxy",
+ publisher = "AIP",
+ year = "1994",
+ journal = "Applied Physics Letters",
+ volume = "65",
+ number = "22",
+ pages = "2851--2853",
+ keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
+ TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
+ NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
+ FLOW; FLOW RATE",
+ URL = "http://link.aip.org/link/?APL/65/2851/1",
+ doi = "10.1063/1.112513",
+ notes = "gas source mbe of 6h-sic on 6h-sic",
+}
+