+\newpage
+
+%\listoffigures
+
+\section*{Figure Captions}
+
+\begin{enumerate}
+ \item XTEM image of a $Si$ sample implanted with $180 \, keV \, C^+$ ions at a dose of $4.3 \times 10^{17} \, cm^{-2}$ and a substrate temperature of $150 \,^{\circ} \mathrm{C}$. Lamellar and spherical amorphous inclusions are marked by $L$ and $S$.
+ \item Schematic explaining the selforganization of amorphous $SiC_x$ precipitates and the evolution into ordered lamellae with increasing dose (see text).
+ \item Nuclear and electronic stopping powers and concentration profile of $180 \, keV \, C^+$ ions implanted in $Si$ calculated by TRIM.
+ \item Comparison of a simulation result and a XTEM image ($180 \, keV$ $C^+$ implantation into silicon at $150 \,^{\circ} \mathrm{C}$ and a dose of $4.3 \times 10^{17} cm^{-2}$). Amorphous cells are white.
+ \item Two identical simulation runs with diffusion switched off (left) and on (right).
+ \item Two identical simulation runs with different diffusion rates $d_r$. All other parameters are as in Figure 5(b).
+ \item Four simulation runs with different simulation parameter $p_s$. All other parameters are as in Figure 5(b).
+ \item Plane view display of amorphous (white) and crystalline (black) cells in two consecutive slices $m$ and $m+1$ (a,b) and corresponding carbon map (c,d). Higher carbon concentrations are given by higher brightness in (c,d).
+\end{enumerate}
+
+\newpage
+
+\begin{figure}[!h]
+\begin{center}
+\includegraphics[width=17cm]{k393abild1_e.eps}
+%\caption[XTEM image of a $Si$ sample implanted with $180 \, keV \, C^+$ ions at a dose of $4.3 \times 10^{17} \, cm^{-2}$ and a substrate temperature of $150 \,^{\circ} \mathrm{C}$. Lamellar and spherical amorphous inclusions are marked by $L$ and $S$.]{}
+\label{xtem}
+\\1
+\end{center}
+\end{figure}
+
+\begin{figure}[!h]
+\begin{center}
+\includegraphics[width=17cm]{model1_e.eps}
+%\caption[Schematic explaining the selforganization of amorphous $SiC_x$ precipitates and the evolution into ordered lamellae with increasing dose (see text).]{}
+\label{model}
+\\2
+\end{center}
+\end{figure}
+
+\begin{figure}[!h]
+\begin{center}
+\includegraphics[width=14cm]{2pTRIM180C.eps}
+%\caption[Nuclear and electronic stopping powers and concentration profile of $180 \, keV \, C^+$ ions implanted in $Si$ calculated by TRIM.]{}
+\label{trim}
+\\3
+\end{center}
+\end{figure}
+
+\begin{figure}[!h]
+\begin{center}
+\includegraphics[width=15cm]{if_cmp2_e.eps}
+%\caption[Comparison of a simulation result and a XTEM image ($180 \, keV$ $C^+$ implantation into silicon at $150 \,^{\circ} \mathrm{C}$ and a dose of $4.3 \times 10^{17} cm^{-2}$). Amorphous cells are white.]{}
+\label{c-xtem}
+\\4
+\end{center}
+\end{figure}
+
+\begin{figure}[!h]
+\begin{center}
+\includegraphics[width=8cm]{mit_ohne_diff_big_e.eps}
+%\caption[Two identical simulation runs with diffusion switched off (left) and on (right).]{}
+\label{zdiff}
+\\5
+\end{center}
+\end{figure}
+
+\begin{figure}[!h]
+\begin{center}
+\includegraphics[width=8cm]{high_low_ac-diff_big_e.eps}
+%\caption[Two identical simulation runs with different diffusion rates $d_r$. All other parameters are as in Figure 5(b).]{}
+\label{diffrate}
+\\6
+\end{center}
+\end{figure}
+
+\begin{figure}[!h]
+\begin{center}
+\includegraphics[width=12cm]{high_to_low_a_e.eps}
+%\caption[Four simulation runs with different simulation parameter $p_s$. All other parameters are as in Figure 5(b).]{}
+\label{stress}
+\\7
+\end{center}
+\end{figure}
+
+\begin{figure}[!h]
+\begin{center}
+\includegraphics[width=10cm]{all_z-z_plus_1_big.eps}
+%\caption[Plane view display of amorphous (white) and crystalline (black) cells in two consecutive slices $m$ and $m+1$ (a,b) and corresponding carbon map (c,d). Higher carbon concentrations are given by higher brightness in (c,d).]{}
+\label{compl-str}
+\\8
+\end{center}
+\end{figure}
+