\item XTEM image of a $Si$ sample implanted with $180 \, keV \, C^+$ ions at a dose of $4.3 \times 10^{17} \, cm^{-2}$ and a substrate temperature of $150 \,^{\circ} \mathrm{C}$. Lamellar and spherical amorphous inclusions are marked by $L$ and $S$.
\item Schematic explaining the selforganization of amorphous $SiC_x$ precipitates and the evolution into ordered lamellae with increasing dose (see text).
\item Nuclear and electronic stopping powers and concentration profile of $180 \, keV \, C^+$ ions implanted in $Si$ calculated by TRIM.
\item XTEM image of a $Si$ sample implanted with $180 \, keV \, C^+$ ions at a dose of $4.3 \times 10^{17} \, cm^{-2}$ and a substrate temperature of $150 \,^{\circ} \mathrm{C}$. Lamellar and spherical amorphous inclusions are marked by $L$ and $S$.
\item Schematic explaining the selforganization of amorphous $SiC_x$ precipitates and the evolution into ordered lamellae with increasing dose (see text).
\item Nuclear and electronic stopping powers and concentration profile of $180 \, keV \, C^+$ ions implanted in $Si$ calculated by TRIM.