$\rightarrow$ {\bf amourphous} precipitates
\item $20 - 30\,\%$ lower silicon density of $a-SiC_x$ compared to $c-Si$\\
$\rightarrow$ {\bf lateral strain} (black arrows)
$\rightarrow$ {\bf amourphous} precipitates
\item $20 - 30\,\%$ lower silicon density of $a-SiC_x$ compared to $c-Si$\\
$\rightarrow$ {\bf lateral strain} (black arrows)
\item reduction of the carbon supersaturation in $c-Si$\\
$\rightarrow$ {\bf carbon diffusion} into amorphous volumina
(white arrows)
\item reduction of the carbon supersaturation in $c-Si$\\
$\rightarrow$ {\bf carbon diffusion} into amorphous volumina
(white arrows)
- \item random numbers according to the nuclear
- energy loss to determine the volume hit
- by an impinging ion
+ \item random numbers distributed according to
+ the nuclear energy loss to determine the
+ volume hit by an impinging ion
\begin{itemize}
\item selforganized nanometric precipitates by ion irradiation
\item model describing the seoforganization process
\begin{itemize}
\item selforganized nanometric precipitates by ion irradiation
\item model describing the seoforganization process
\item detailed structural/compositional information
\item recipe for broad distributions of lamellar structure
\end{itemize}
\item detailed structural/compositional information
\item recipe for broad distributions of lamellar structure
\end{itemize}