+ Si-C and C-C pair correlation function:\\
+ \hspace*{1.3cm} \includegraphics[width=22cm]{pc_si-c_c-c.eps}
+ \begin{center}
+ {\tiny
+ {\bf Dashed vertical lines:} Further calculated C-Si distances
+ in the \flq100\frq{} C-Si dumbbell interstitial configuration}\\[0.5cm]
+ \end{center}
+ Si-Si pair correlation function:\\
+ \hspace*{1.3cm} \includegraphics[width=22cm]{pc_si-si.eps}\\
+ {\bf Interpretation:}
+ {\small
+ \begin{itemize}
+ \item C-C peak at 0.15 nm similar to next neighbour distance of graphite
+ or diamond\\
+ $\Rightarrow$ Formation of strong C-C bonds
+ (almost only for high C concentrations)
+ \item Si-C peak at 0.19 nm similar to next neighbour distance in 3C-SiC
+ \item C-C peak at 0.31 nm equals C-C distance in 3C-SiC\\
+ (due to concatenated, differently oriented
+ \flq100\frq{} dumbbell interstitials)
+ \item Si-Si shows non-zero g(r) values around 0.31 nm like in 3C-SiC\\
+ and a decrease at regular distances\\
+ (no clear peak,
+ interval of enhanced g(r) corresponds to C-C peak width)
+ \item Low C concentration (i.e. $V_1$):
+ The \flq100\frq{} dumbbell configuration
+ \begin{itemize}
+ \item is identified to stretch the Si-Si next neighbour distance
+ to 0.3 nm
+ \item is identified to contribute to the Si-C peak at 0.19 nm
+ \item explains further C-Si peaks (dashed vertical lines)
+ \end{itemize}
+ $\Rightarrow$ C atoms are first elements arranged at distances
+ expected for 3C-SiC\\
+ $\Rightarrow$ C atoms pull the Si atoms into the right
+ configuration at a later stage
+ \item High C concentration (i.e. $V_2$ and $V_3$):
+ \begin{itemize}
+ \item High amount of damage introduced into the system
+ \item Short range order observed but almost no long range order
+ \end{itemize}
+ $\Rightarrow$ Start of amorphous SiC-like phase formation\\
+ $\Rightarrow$ Higher temperatures required for proper SiC formation
+ \end{itemize}
+ }
+