- \item Significant technological progress
- in 3C-SiC wide band gap semiconductor thin film formation [1].
- \item New perspectives for processes relying upon prevention of
- precipitation, e.g. fabrication of strained pseudomorphic
- $\text{Si}_{1-y}\text{C}_y$ heterostructures [2].
+ \item SiC is a promising wide band gap material for high-temperature,
+ high-power, high-frequency semiconductor devices [1].
+ \item 3C-SiC epitaxial thin film formation on Si requires detailed
+ knowledge of SiC nucleation.
+ \item Fabrication of high carbon doped, strained pseudomorphic
+ $\text{Si}_{1-y}\text{C}_y$ layers requires suppression of
+ 3C-SiC nucleation [2].