+As shown in section~\ref{subsection:sep_def} C$_{\text{s}}$ exhibits the lowest energy of formation.\r
+Considering a perfect Si crystal and conservation of particles, however, the occupation of a Si lattice site by a slowed down implanted C atom is necessarily accompanied by the formation of a Si self-interstitial.\r
+There are good reasons for the existence of regions exhibiting such configurations with regard to the IBS process.\r
+Highly energetic C atoms are able to kick out a Si atom from its lattice site, resulting in a Si self-interstitial accompanied by a vacant site, which might get occupied by another C atom, which lost almost all of its kinetic energy.\r
+Thus, configurations of C$_{\text{s}}$ and Si self-interstitials are investigated in the following.\r
+The Si$_{\text{i}}$ \hkl<1 1 0> DB, which was found to exhibit the lowest energy of formation within the investigated self-interstitial configurations, is assumed to provide the energetically most favorable configuration in combination with C$_{\text{s}}$.\r
+\r
+\begin{table}\r
+\begin{ruledtabular}\r
+\begin{tabular}{l c c c c c c}\r
+ & \hkl[1 1 0] & \hkl[-1 1 0] & \hkl[0 1 1] & \hkl[0 -1 1] &\r
+ \hkl[1 0 1] & \hkl[-1 0 1] \\\r
+\hline\r
+1 & \RM{1} & \RM{3} & \RM{3} & \RM{1} & \RM{3} & \RM{1} \\\r
+2 & \RM{2} & \RM{6} & \RM{6} & \RM{2} & \RM{8} & \RM{5} \\\r
+3 & \RM{3} & \RM{1} & \RM{3} & \RM{1} & \RM{1} & \RM{3} \\\r
+4 & \RM{4} & \RM{7} & \RM{9} & \RM{10} & \RM{10} & \RM{9} \\\r
+5 & \RM{5} & \RM{8} & \RM{6} & \RM{2} & \RM{6} & \RM{2} \\\r
+\end{tabular}\r
+\caption{Equivalent configurations labeld \RM{1}-\RM{10} of \hkl<1 1 0>-type Si$_{\text{i}}$ DBs created at position I and C$_{\text{s}}$ created at positions 1 to 5 according to Fig.~\ref{fig:combos_si}. The respective orientation of the Si$_{\text{i}}$ DB is given in the first row.}\r
+\label{table:dc_si-s}\r
+\end{ruledtabular}\r
+\end{table}\r
+\begin{table*}\r
+\begin{ruledtabular}\r
+\begin{tabular}{l c c c c c c c c c c}\r
+ & \RM{1} & \RM{2} & \RM{3} & \RM{4} & \RM{5} & \RM{6} & \RM{7} & \RM{8} & \RM{9} & \RM{10} \\\r
+\hline\r
+$E_{\text{f}}$ [eV]& 4.37 & 5.26 & 5.57 & 5.37 & 5.12 & 5.10 & 5.32 & 5.28 & 5.39 & 5.32 \\\r
+$E_{\text{b}}$ [eV] & -0.97 & -0.08 & 0.22 & -0.02 & -0.23 & -0.25 & -0.02 & -0.06 & 0.05 & -0.03 \\\r
+$r$ [nm] & 0.292 & 0.394 & 0.241 & 0.453 & 0.407 & 0.408 & 0.452 & 0.392 & 0.456 & 0.453\\\r
+\end{tabular}\r
+\caption{Formation energies $E_{\text{f}}$, binding energies $E_{\text{b}}$ and C$_{\text{s}}$-Si$_{\text{i}}$ separation distances of the combinational C$_{\text{s}}$ and Si$_{\text{i}}$ configurations as defined in table \ref{table:dc_si-s}. Energies are given in eV while the separation is given in nm.}\r
+\label{table:dc_si-s_e}\r
+\end{ruledtabular}\r
+\end{table*}\r
+Table~\ref{table:dc_si-s} classifies equivalent configurations of \hkl<1 1 0>-type Si$_{\text{i}}$ DBs created at position I and C$_{\text{s}}$ created at positions 1 to 5 according to Fig.~\ref{fig:combos_si}.\r
+Corresponding formation as well as binding energies and the C$_{\text{s}}$-Si$_{\text{i}}$ distances are listed in Table~\ref{table:dc_si-s_e}.\r
+\r
+\begin{figure}\r
+\includegraphics[width=\columnwidth]{c_sub_si110.ps}\r
+\caption{Binding energies of combinations of a C$_{\text{s}}$ and a Si$_{\text{i}}$ DB with respect to the separation distance. The binding energies of the defect pairs are well approximated by a Lennard-Jones 6-12 potential, which is used for curve fitting.}\r
+\label{fig:dc_si-s}\r
+\end{figure}\r
+\r
+Non-zero temperature, entropy, spatial separation of these defects possible, indeed observed in ab initio MD run.\r