-It is, thus, concluded that precipitation occurs by a successive agglomeration of C$_{\text{s}}$.\r
-However, the process is governed by both, C$_{\text{s}}$ accompanied by Si$_{\text{i}}$ as well as C$_{\text{i}}$.\r
-... HIER WEITER ...\r
-By this, explains the alignment of the \hkl(h k l) lattice planes of the precipitate and the substrate.\r
-No contradiction to ... has Si int ... nice to explain cloudy TEM images indicating atoms in interstitial lattice.\r
-\r
-Our calculations show that point defects which unavoidably are present after ion implantation significantly influence the mobility of implanted carbon \r
-in the silicon crystal.\r
-A large capture radius has been found for... \r
-Especially vacancies.... \r
-\r
-\r
-C$_{\text{s}}$ must be attributed an important role in SiC formation ...\r
+We conclude that precipitation occurs by successive agglomeration of C$_{\text{s}}$.\r
+However, the agglomeration and rearrangement of C$_{\text{s}}$ is only possible by mobile C$_{\text{i}}$, which has to be present at the same time.\r
+Accordingly, the process is governed by both, C$_{\text{s}}$ accompanied by Si$_{\text{i}}$ as well as C$_{\text{i}}$.\r
+It is worth to mention that there is no contradiction to results of the HREM studies\cite{werner96,werner97,eichhorn99,lindner99_2,koegler03}.\r
+Regions showing dark contrasts in an otherwise undisturbed Si lattice are attributed to C atoms in the interstitial lattice.\r
+However, there is no particular reason for the C species to reside in the interstitial lattice.\r
+Contrasts are also assumed for Si$_{\text{i}}$.\r
+Once precipitation occurs, regions of dark contrasts disappear in favor of Moir\'e patterns indicating 3C-SiC in c-Si due to the mismatch in the lattice constant.\r
+Until then, however, these regions are either composed of stretched coherent SiC and interstitials or of already contracted incoherent SiC surrounded by Si and interstitials, where the latter is too small to be detected in HREM.\r
+In both cases Si$_{\text{i}}$ might be attributed a third role, which is the partial compensation of tensile strain that is present either in the stretched SiC or at the interface of the contracted SiC and the Si host.\r