- \begin{minipage}[b]{5.5cm}
- \begin{itemize}
- \item {\color{red} Total simulation volume}
- \item {\color{green} Volume of minimal SiC precipitation}
- \item {\color{blue} Volume of necessary amount of Si}
- \end{itemize}
- \vspace{40pt}
- \includegraphics[width=6.3cm]{../plot/foo150.ps}
+ \begin{minipage}[t]{6.3cm}
+ \tiny
+ \begin{itemize}
+ \item Low C concentration (i.e. $V_1$):
+ The <100> dumbbell configuration
+ \begin{itemize}
+ \item is identified to stretch the Si-Si next neighbour distance
+ to 0.3 nm
+ \item is identified to contribute to the Si-C peak at 0.19 nm
+ \item explains further C-Si peaks (dashed vertical lines)
+ \end{itemize}
+ $\Rightarrow$ C atoms are first elements arranged at distances
+ expected for 3C-SiC\\
+ $\Rightarrow$ C atoms pull the Si atoms into the right
+ configuration at a later stage
+ \item High C concentration (i.e. $V_2$ and $V_3$):
+ \begin{itemize}
+ \item High amount of damage introduced into the system
+ \item Short range order observed but almost no long range order
+ \end{itemize}
+ $\Rightarrow$ Start of amorphous SiC-like phase formation\\
+ $\Rightarrow$ Higher temperatures required for proper SiC formation
+ \end{itemize}