-
-%\vspace{0.1cm}
-
-\framebox{
-\begin{minipage}{12.9cm}
- \underline{Defects}
- \begin{itemize}
- \item DFT / EA
- \begin{itemize}
- \item Point defects excellently / fairly well described
- by DFT / EA
- \item C$_{\text{sub}}$ drastically underestimated by EA
- \item EA predicts correct ground state:
- C$_{\text{sub}}$ \& \si{} $>$ \ci{}
- \item Identified migration path explaining
- diffusion and reorientation experiments by DFT
- \item EA fails to describe \ci{} migration:
- Wrong path \& overestimated barrier
- \end{itemize}
- \item Combinations of defects
- \begin{itemize}
- \item Agglomeration of point defects energetically favorable
- by compensation of stress
- \item Formation of C-C unlikely
- \item C$_{\text{sub}}$ favored conditions (conceivable in IBS)
- \item \ci{} \hkl<1 0 0> $\leftrightarrow$ \cs{} \& \si{} \hkl<1 1 0>\\
- Low barrier (\unit[0.77]{eV}) \& low capture radius
- \end{itemize}
- \end{itemize}
+\end{pspicture}\\[0.4cm]
+\begin{pspicture}(0,0)(12,2)
+\psframebox[fillstyle=gradient,gradbegin=hblue,gradend=white,gradmidpoint=1.0,gradlines=1000,linestyle=none]{
+\begin{minipage}{11cm}
+{\color{black}Doctoral studies}\\
+ Classical potential \underline{molecular dynamics} simulations \ldots\\
+ \underline{Density functional theory} calculations \ldots\\[0.2cm]
+ \ldots on defect formation and SiC precipitation in Si