+{\color{blue}
+\begin{center}
+Experiment \& simulation\\
+in good agreement\\[1.0cm]
+
+Simulation is able to model the whole depth region\\[1.2cm]
+\end{center}
+}
+
+\end{minipage}
+\begin{minipage}{0.5cm}
+\vfill
+\end{minipage}
+\begin{minipage}{8.0cm}
+ \vspace{-0.3cm}
+ \includegraphics[width=9cm]{../../nlsop/img/dosis_entwicklung_ng_e_1-2.eps}\\
+ \includegraphics[width=9cm]{../../nlsop/img/dosis_entwicklung_ng_e2_2-2.eps}
+\end{minipage}
+
+\end{slide}
+
+\begin{slide}
+
+\headdiplom
+{\large\bf
+ Structural \& compositional details
+}
+
+\begin{minipage}[t]{7.5cm}
+\includegraphics[height=6.5cm]{../../nlsop/img/ac_cconc_ver2_e.eps}\\
+\end{minipage}
+\begin{minipage}[t]{5.0cm}
+\includegraphics[height=6.5cm]{../../nlsop/img/97_98_e.eps}
+\end{minipage}
+
+\footnotesize
+
+\vspace{-0.1cm}
+
+\begin{itemize}
+ \item Fluctuation of C concentration in lamellae region
+ \item \unit[8--10]{at.\%} C saturation limit
+ within the respective conditions
+ \item Complementarily arranged and alternating sequence of layers\\
+ with a high and low amount of amorphous regions
+ \item C accumulation in the amorphous phase / Origin of stress
+\end{itemize}
+
+\begin{picture}(0,0)(-260,-50)
+\framebox{
+\begin{minipage}{3cm}
+\begin{center}
+{\color{blue}
+Precipitation process\\
+gets traceable\\
+by simulation!
+}
+\end{center}
+\end{minipage}
+}
+\end{picture}
+
+\end{slide}
+
+\begin{slide}
+
+\headphd
+{\large\bf
+ Formation of epitaxial single crystalline 3C-SiC
+}
+
+\footnotesize
+
+\vspace{0.2cm}
+
+\begin{center}
+\begin{itemize}
+ \item \underline{Implantation step 1}\\[0.1cm]
+ Almost stoichiometric dose | \unit[180]{keV} | \degc{500}\\
+ $\Rightarrow$ Epitaxial {\color{blue}3C-SiC} layer \&
+ {\color{blue}precipitates}
+ \item \underline{Implantation step 2}\\[0.1cm]
+ Little remaining dose | \unit[180]{keV} | \degc{250}\\
+ $\Rightarrow$
+ Destruction/Amorphization of precipitates at layer interface
+ \item \underline{Annealing}\\[0.1cm]
+ \unit[10]{h} at \degc{1250}\\
+ $\Rightarrow$ Homogeneous 3C-SiC layer with sharp interfaces
+\end{itemize}
+\end{center}
+
+\begin{minipage}{7cm}
+\includegraphics[width=7cm]{ibs_3c-sic.eps}
+\end{minipage}
+\begin{minipage}{5cm}
+\begin{pspicture}(0,0)(0,0)
+\rnode{box}{
+\psframebox[fillstyle=solid,fillcolor=white,linecolor=blue,linestyle=solid]{
+\begin{minipage}{5.3cm}
+ \begin{center}
+ {\color{blue}
+ 3C-SiC precipitation\\
+ not yet fully understood
+ }
+ \end{center}
+ \vspace*{0.1cm}
+ \renewcommand\labelitemi{$\Rightarrow$}
+ Details of the SiC precipitation
+ \begin{itemize}
+ \item significant technological progress\\
+ in SiC thin film formation
+ \item perspectives for processes relying\\
+ upon prevention of SiC precipitation
+ \end{itemize}
+\end{minipage}
+}}
+\rput(-6.8,5.4){\pnode{h0}}
+\rput(-3.0,5.4){\pnode{h1}}
+\ncline[linecolor=blue]{-}{h0}{h1}
+\ncline[linecolor=blue]{->}{h1}{box}
+\end{pspicture}
+\end{minipage}
+
+\end{slide}
+
+\begin{slide}
+
+\headphd
+{\large\bf
+ Supposed precipitation mechanism of SiC in Si
+}
+
+ \scriptsize
+
+ \vspace{0.1cm}
+
+ \framebox{
+ \begin{minipage}{3.6cm}
+ \begin{center}
+ Si \& SiC lattice structure\\[0.1cm]
+ \includegraphics[width=2.3cm]{sic_unit_cell.eps}
+ \end{center}
+{\tiny
+ \begin{minipage}{1.7cm}
+\underline{Silicon}\\
+{\color{yellow}$\bullet$} Si | {\color{gray}$\bullet$} Si\\
+$a=\unit[5.429]{\\A}$\\
+$\rho^*_{\text{Si}}=\unit[100]{\%}$
+ \end{minipage}
+ \begin{minipage}{1.7cm}
+\underline{Silicon carbide}\\
+{\color{yellow}$\bullet$} Si | {\color{gray}$\bullet$} C\\
+$a=\unit[4.359]{\\A}$\\
+$\rho^*_{\text{Si}}=\unit[97]{\%}$
+ \end{minipage}
+}
+ \end{minipage}
+ }
+ \hspace{0.1cm}
+ \begin{minipage}{4.1cm}
+ \begin{center}
+ \includegraphics[width=3.3cm]{tem_c-si-db.eps}
+ \end{center}
+ \end{minipage}
+ \hspace{0.1cm}
+ \begin{minipage}{4.0cm}
+ \begin{center}
+ \includegraphics[width=3.3cm]{tem_3c-sic.eps}
+ \end{center}
+ \end{minipage}
+
+ \vspace{0.1cm}
+
+ \begin{minipage}{4.0cm}
+ \begin{center}
+ C-Si dimers (dumbbells)\\[-0.1cm]
+ on Si interstitial sites
+ \end{center}
+ \end{minipage}
+ \hspace{0.1cm}
+ \begin{minipage}{4.1cm}
+ \begin{center}
+ Agglomeration of C-Si dumbbells\\[-0.1cm]