+\footnotesize
+
+\vspace{0.2cm}
+
+\begin{center}
+\begin{itemize}
+ \item \underline{Implantation step 1}\\[0.1cm]
+ Almost stoichiometric dose | \unit[180]{keV} | \degc{500}\\
+ $\Rightarrow$ Epitaxial {\color{blue}3C-SiC} layer \&
+ {\color{blue}precipitates}
+ \item \underline{Implantation step 2}\\[0.1cm]
+ Little remaining dose | \unit[180]{keV} | \degc{250}\\
+ $\Rightarrow$
+ Destruction/Amorphization of precipitates at layer interface
+ \item \underline{Annealing}\\[0.1cm]
+ \unit[10]{h} at \degc{1250}\\
+ $\Rightarrow$ Homogeneous 3C-SiC layer with sharp interfaces
+\end{itemize}
+\end{center}
+
+\begin{minipage}{7cm}
+\includegraphics[width=7cm]{ibs_3c-sic.eps}
+\end{minipage}
+\begin{minipage}{5cm}
+\begin{pspicture}(0,0)(0,0)
+\rnode{box}{
+\psframebox[fillstyle=solid,fillcolor=white,linecolor=blue,linestyle=solid]{
+\begin{minipage}{5.3cm}