A spherical 3C-SiC precipitate enclosed in a c-Si surrounding is constructed as it is expected from IBS experiments and from simulations that finally succeed in simulating the precipitation event.
On the one hand this sheds light on characteristic values like the radial distribution function or the total amount of free energy for such a configuration that is aimed to be reproduced by simulation.
A spherical 3C-SiC precipitate enclosed in a c-Si surrounding is constructed as it is expected from IBS experiments and from simulations that finally succeed in simulating the precipitation event.
On the one hand this sheds light on characteristic values like the radial distribution function or the total amount of free energy for such a configuration that is aimed to be reproduced by simulation.
This is surprising since the melting transition of plain c-Si is expected at temperatures around 3125 K, as discussed in section \ref{subsection:md:tval}.
Obviously the precipitate lowers the transition point of the surrounding c-Si matrix.
This is indeed verified by visualizing the atomic data.
This is surprising since the melting transition of plain c-Si is expected at temperatures around 3125 K, as discussed in section \ref{subsection:md:tval}.
Obviously the precipitate lowers the transition point of the surrounding c-Si matrix.
This is indeed verified by visualizing the atomic data.