+This is indeed verified by visualizing the atomic data.
+% ./visualize -w 640 -h 480 -d saves/sic_prec_120Tm_cnt1 -nll -11.56 -0.56 -11.56 -fur 11.56 0.56 11.56 -c -0.2 -24.0 0.6 -L 0 0 0.2 -r 0.6 -B 0.1
+\begin{figure}[!ht]
+\begin{center}
+\begin{minipage}{7cm}
+\includegraphics[width=7cm,draft=false]{sic_prec/melt_01.eps}
+\end{minipage}
+\begin{minipage}{7cm}
+\includegraphics[width=7cm,draft=false]{sic_prec/melt_02.eps}
+\end{minipage}
+\begin{minipage}{7cm}
+\includegraphics[width=7cm,draft=false]{sic_prec/melt_03.eps}
+\end{minipage}
+\end{center}
+\caption{Cross section image of atomic data gained by annealing simulations of the constructed 3C-SiC precipitate in c-Si at 200 ps (top left), 520 ps (top right) and 720 ps (bottom).}
+\label{fig:md:sic_melt}
+\end{figure}
+Figure \ref{fig:md:sic_melt} shows cross section images of the atomic structures at different times and temperatures.
+As can be seen from the image at 520 ps melting of the Si surrounding in fact starts in the defective interface region of the 3C-SiC precipitate and the c-Si surrounding propagating outwards until the whole Si matrix is affected at 720 ps.
+As predicted from the radial distribution data the precipitate itself remains stable.
+