-0 K simulations -> C-Si DB, however non-zero temperatures and the IBS, process far from equilibrium, so sub C should be feasible ...
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-{\color{red}Todo: Explain that formation of SiC by substitutional C is more likely than the supposed C-Si agglomeration, at least in the absence of the accompanied Si self-interstitial.}
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+In addition, there are experimental findings, which might be exploited to reinforce the non-validity of the proposed precipitation model.
+High resolution TEM shows equal orientation of \hkl(h k l) planes of the c-Si host matrix and the 3C-SiC precipitate.
+Formation of 3C-SiC realized by successive formation of substitutional C, in which the atoms belonging to one of the two fcc lattices are substituted by C atoms perfectly conserves the \hkl(h k l) planes of the initial c-Si diamond lattice.
+Silicon self-interstitials consecutively created to the same degree are able to diffuse into the c-Si host one after another.
+Investigated combinations of C interstitials, however, result in distorted configurations, in which C atoms, which at some point will form SiC, are no longer aligned to the host.
+It is easily understandable that the mismatch in alignement will increase with increasing defect density.
+In addition, the amount of Si self-interstitials equal to the amount of agglomerated C atoms would be released all of a sudden probably not being able to diffuse into the c-Si host matrix without damaging the Si surrounding or the precipitate itself.
+In addition, IBS results in the formation of the cubic polytype of SiC only.
+As this result conforms well with the model of precipitation by substitutional C there is no obvious reason why hexagonal polytypes should not be able to form or an equal alignement would be mandatory assuming the model of precipitation by C-Si dumbbell agglomeration.
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