+Investigating configurations of C$_{\text{s}}$ and Si$_{\text{i}}$, formation energies higher than that of the C$_{\text{i}}$ \hkl<1 0 0> DB are obtained keeping up previously derived assumptions concerning the ground state of C$_{\text{i}}$ in otherwise perfect Si.
+However, a small capture radius is identified for the respective interaction that might prevent the recombination of defects exceeding a separation of \unit[0.6]{nm} into the ground state configuration.
+In addition, a rather small activation energy of \unit[0.77]{eV} allows for the formation of a C$_{\text{s}}$-Si$_{\text{i}}$ pair originating from the C$_{\text{i}}$ \hkl<1 0 0> DB structure by thermally activated processes.
+Thus, elevated temperatures might lead to thermodynamically unstable configurations of C$_{\text{s}}$ and a remaining Si atom in the near interstitial lattice, which is supported by the result of an {\em ab initio} molecular dynamics run.
+%Thus, due to missing attractive interaction forces driving the system to form C-Si \hkl<1 0 0> dumbbell interstitial complexes substitutional C, while thermodynamically not stable, constitutes a most likely configuration occuring in IBS, a process far from equlibrium.
+
+\fi
+
+% todo - sync with conclusion chapter
+
+These findings allow to draw conclusions on the mechanisms involved in the process of SiC conversion in Si.
+Agglomeration of C$_{\text{i}}$ is energetically favored and enabled by a low activation energy for migration.
+Although ion implantation is a process far from thermodynamic equilibrium, which might result in phases not described by the Si/C phase diagram, i.e. a C phase in Si, high activation energies are believed to be responsible for a low probability of the formation of C-C clusters.
+
+In the context of the initially stated controversy present in the precipitation model, these findings suggest an increased participation of C$_{\text{s}}$ already in the initial stage due to its high probability of incidence.
+In addition, thermally activated, C$_{\text{i}}$ might turn into C$_{\text{s}}$.
+The associated emission of Si$_{\text{i}}$ serves two needs: as a vehicle for other C$_{\text{s}}$ atoms and as a supply of Si atoms needed elsewhere to form the SiC structure.
+As for the vehicle, Si$_{\text{i}}$ is believed to react with C$_{\text{s}}$ turning it into highly mobile C$_{\text{i}}$ again, allowing for the rearrangement of the C atom.
+The rearrangement is crucial to end up in a configuration of C atoms only occupying substitutionally the lattice sites of one of the two fcc lattices that build up the diamond lattice.
+On the other hand, the conversion of some region of Si into SiC by \cs{} is accompanied by a reduction of the volume since SiC exhibits a \unit[20]{\%} smaller lattice constant than Si.
+The reduction in volume is compensated by excess Si$_{\text{i}}$ serving as building blocks for the surrounding Si host or a further formation of SiC.
+
+To conclude, precipitation occurs by successive agglomeration of C$_{\text{s}}$.
+However, the agglomeration and rearrangement of C$_{\text{s}}$ is only possible by mobile C$_{\text{i}}$, which has to be present at the same time.
+Accordingly, the process is governed by both, C$_{\text{s}}$ accompanied by Si$_{\text{i}}$ as well as C$_{\text{i}}$.
+It is worth to mention that there is no contradiction to results of the HREM studies \cite{werner96,werner97,eichhorn99,lindner99_2,koegler03}.
+Regions showing dark contrasts in an otherwise undisturbed Si lattice are attributed to C atoms in the interstitial lattice.
+However, there is no particular reason for the C species to reside in the interstitial lattice.
+Contrasts are also assumed for Si$_{\text{i}}$.
+Once precipitation occurs, regions of dark contrasts disappear in favor of Moir\'e patterns indicating 3C-SiC in c-Si due to the mismatch in the lattice constant.
+Until then, however, these regions are either composed of stretched coherent SiC and interstitials or of already contracted incoherent SiC surrounded by Si and interstitials, where the latter is too small to be detected in HREM.
+In both cases Si$_{\text{i}}$ might be attributed a third role, which is the partial compensation of tensile strain that is present either in the stretched SiC or at the interface of the contracted SiC and the Si host.
+
+Furthermore, the experimentally observed alignment of the \hkl(h k l) planes of the precipitate and the substrate is satisfied by the mechanism of successive positioning of C$_{\text{s}}$.
+In contrast, there is no obvious reason for the topotactic orientation of an agglomerate consisting exclusively of C-Si dimers, which would necessarily involve a much more profound change in structure for the transition into SiC.
+
+%Prevailing conditions in the IBS process at elevated temperatures and the fact that IBS is a nonequilibrium process reinforce the possibility of formation of substitutional C instead of the thermodynamically stable C-Si dumbbell interstitials predicted by simulations at zero Kelvin.
+\label{section:defects:noneq_process_02}
+
+\ifnum1=0
+
+In addition, there are experimental findings, which might be exploited to reinforce the non-validity of the proposed precipitation model.
+High resolution TEM shows equal orientation of \hkl(h k l) planes of the c-Si host matrix and the 3C-SiC precipitate.
+
+Formation of 3C-SiC realized by successive formation of substitutional C, in which the atoms belonging to one of the two fcc lattices are substituted by C atoms perfectly conserves the \hkl(h k l) planes of the initial c-Si diamond lattice.
+
+Silicon self-interstitials consecutively created to the same degree are able to diffuse into the c-Si host one after another.
+
+Investigated combinations of C interstitials, however, result in distorted configurations, in which C atoms, which at some point will form SiC, are no longer aligned to the host.
+
+It is easily understandable that the mismatch in alignement will increase with increasing defect density.
+
+In addition, the amount of Si self-interstitials equal to the amount of agglomerated C atoms would be released all of a sudden probably not being able to diffuse into the c-Si host matrix without damaging the Si surrounding or the precipitate itself.
+
+In addition, IBS results in the formation of the cubic polytype of SiC only.
+
+As this result conforms well with the model of precipitation by substitutional C there is no obvious reason why hexagonal polytypes should not be able to form or an equal alignement would be mandatory assuming the model of precipitation by C-Si dumbbell agglomeration.
+
+\fi